Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IPT008N06NM5LFATMA1TRENCH 40<-<100V PG-HSOF-8 |
2837 | 7.50 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 454A (Tc) | 10V | 0.8mOhm @ 150A, 10V | 3.6V @ 250µA | 185 nC @ 10 V | ±20V | 980 pF @ 30 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPTG007N06NM5ATMA1MOSFET N-CH 60V 53A/454A HSOG-8 |
3820 | 7.78 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ 5 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 53A (Ta), 454A (Tc) | 6V, 10V | 0.75mOhm @ 150A, 10V | 3.3V @ 280µA | 261 nC @ 10 V | ±20V | 21000 pF @ 30 V | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FCP099N65S3MOSFET N-CH 650V 30A TO220-3 |
2592 | 4.77 |
ДобавитьРасследования |
Tube | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 99mOhm @ 15A, 10V | 4.5V @ 3mA | 61 nC @ 10 V | ±30V | 2480 pF @ 400 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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NVMTS0D6N04CLTXGT6 40V LL PQFN8*8 EXPANSI |
3501 | 8.74 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | - | - | - | 78.9A (Ta), 554.5A (Tc) | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IPL60R104C7AUMA1MOSFET N-CH 600V 20A 4VSON |
3728 | 7.52 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 104mOhm @ 9.7A, 10V | 4V @ 490µA | 42 nC @ 10 V | ±20V | 1819 pF @ 400 V | - | 122W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDI045N10A-F102MOSFET N-CH 100V 120A I2PAK |
2135 | 4.62 |
ДобавитьРасследования |
Bulk,Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 4.5mOhm @ 100A, 10V | 4V @ 250µA | 74 nC @ 10 V | ±20V | 5270 pF @ 50 V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTA102N15TMOSFET N-CH 150V 102A TO263 |
3491 | 4.79 |
ДобавитьРасследования |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 102A (Tc) | 10V | 18mOhm @ 500mA, 10V | 5V @ 1mA | 87 nC @ 10 V | ±20V | 5220 pF @ 25 V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NTE2382MOSFET N-CHANNEL 100V 9.2A TO220 |
3051 | 4.79 |
ДобавитьРасследования |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.2A (Tc) | 10V | 270mOhm @ 4.6A, 10V | 4V @ 250µA | 23 nC @ 10 V | ±20V | 400 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FCP099N60EMOSFET N-CH 600V 37A TO220-3 |
2783 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 37A (Tc) | 10V | 99mOhm @ 18.5A, 10V | 3.5V @ 250µA | 114 nC @ 10 V | ±20V | 3465 pF @ 380 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FCH150N65F-F155MOSFET N-CH 650V 24A TO247 |
10800 | 4.84 |
ДобавитьРасследования |
Bulk,Tube | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 150mOhm @ 12A, 10V | 5V @ 2.4mA | 94 nC @ 10 V | ±20V | 3737 pF @ 100 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTP06N120PMOSFET N-CH 1200V 600MA TO220AB |
2762 | 4.87 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 600mA (Tc) | 10V | 32Ohm @ 500mA, 10V | 4.5V @ 50µA | 13.3 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STO65N60DM6N-CHANNEL 600 V, 67 MOHM TYP., 4 |
2036 | 7.29 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ DM6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 46A (Tc) | 10V | 76mOhm @ 23A, 10V | 4.75V @ 250µA | 65.2 nC @ 10 V | ±25V | 2500 pF @ 100 V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STP13NM60NMOSFET N-CH 600V 11A TO220-3 |
3463 | 4.89 |
ДобавитьРасследования |
Tube | MDmesh™ II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±25V | 790 pF @ 50 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDB029N06MOSFET N-CH 60V 120A D2PAK |
11800 | 7.51 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 3.1mOhm @ 75A, 10V | 4.5V @ 250µA | 151 nC @ 10 V | ±20V | 9815 pF @ 25 V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPT044N15N5ATMA1TRENCH >=100V PG-HSOF-8 |
3025 | 7.99 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 174A (Tc) | 8V, 10V | 4.4mOhm @ 50A, 10V | 4.6V @ 221µA | 84 nC @ 10 V | ±20V | 6500 pF @ 75 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPP65R190CFD7AAKSA1MOSFET N-CH 650V 14A TO220-3 |
2739 | 4.93 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 14A (Tc) | - | 190mOhm @ 6.4A, 10V | 4.5V @ 320µA | 28 nC @ 10 V | ±20V | 1291 pF @ 400 V | - | 77W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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EPC2023GANFET N-CH 30V 60A DIE |
2619 | 7.59 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | eGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 30 V | 60A (Ta) | - | 1.3mOhm @ 40A, 5V | 2.5V @ 20mA | - | - | 2300 pF @ 15 V | - | - | - | Surface Mount |
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Таблицы данных |
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IXFP22N65X2MMOSFET N-CH 650V 22A TO220 |
2879 | 4.99 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Tc) | 10V | 145mOhm @ 11A, 10V | 5V @ 1.5mA | 37 nC @ 10 V | ±30V | 2190 pF @ 25 V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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TK090A65Z,S4XMOSFET N-CH 650V 30A TO220SIS |
2537 | 5.01 |
ДобавитьРасследования |
Tube | DTMOSVI | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Ta) | 10V | 90mOhm @ 15A, 10V | 4V @ 1.27mA | 47 nC @ 10 V | ±30V | 2780 pF @ 300 V | - | 45W (Tc) | 150°C | Through Hole |
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IMBG65R163M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- |
2048 | 8.19 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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