Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTE2372

Таблицы данных

NTE2372

NTE2372

MOSFET P-CHANNEL 200V 3.5A TO220

NTE Electronics, Inc

2006 4.45
- +

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Bag - Active P-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF17N60NT

Таблицы данных

FDPF17N60NT

FDPF17N60NT

MOSFET N-CH 600V 17A TO220F

onsemi

3390 3.41
- +

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Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 340mOhm @ 8.5A, 10V 5V @ 250µA 65 nC @ 10 V ±30V 3040 pF @ 25 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDB024N04AL7

Таблицы данных

FDB024N04AL7

FDB024N04AL7

MOSFET N-CH 40V 100A TO263-7

onsemi

3760 5.01
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® PowerTrench® Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.4mOhm @ 80A, 10V 3V @ 250µA 109 nC @ 10 V ±20V 7300 pF @ 25 V - 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3006-7P-IR

Таблицы данных

AUIRFS3006-7P-IR

AUIRFS3006-7P-IR

PFET, 240A I(D), 60V, 0.0021OHM

International Rectifier

100 100.00
- +

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 2.1mOhm @ 168A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8850 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ)
NVMFS5C404NLWFT1G

Таблицы данных

NVMFS5C404NLWFT1G

NVMFS5C404NLWFT1G

MOSFET N-CH 40V 49A/352A 5DFN

onsemi

2633 6.56
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 49A (Ta), 352A (Tc) 4.5V, 10V 0.75mOhm @ 50A, 10V 2V @ 250µA 181 nC @ 10 V ±20V 12168 pF @ 25 V - 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK3162-91-E 2SK3162-91-E

2SK3162-91-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

3883 0.00
- +

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Bulk * Active - - - - - - - - - - - - - -
PJMH190N60E1_T0_00601 PJMH190N60E1_T0_00601

PJMH190N60E1_T0_00601

600V/ 190MOHM / 20.6A/ EASY TO D

Panjit International Inc.

3515 3.63
- +

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Tube * Active - - - - - - - - - - - - - -
NVMTS1D6N10MCTXG

Таблицы данных

NVMTS1D6N10MCTXG

NVMTS1D6N10MCTXG

PTNG 100V SINGLE NCH PQFN8X8 STD

onsemi

3927 7.24
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 100 V 36A (Ta), 273A (Tc) 10V 1.7mOhm @ 90A, 10V 4V @ 650µA 106 nC @ 10 V ±20V 7630 pF @ 50 V - 5W (Ta), 291W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP86363-F085

Таблицы данных

FDP86363-F085

FDP86363-F085

MOSFET N-CH 80V 110A TO220-3

onsemi

3092 3.65
- +

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Tube Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 110A (Tc) 10V 2.8mOhm @ 80A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 10000 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPTC014N08NM5ATMA1

Таблицы данных

IPTC014N08NM5ATMA1

IPTC014N08NM5ATMA1

MOSFET N-CH 80V 37A/330A HDSOP

Infineon Technologies

3677 7.34
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 80 V 37A (Ta), 330A (Tc) 6V, 10V 1.4mOhm @ 100A, 10V 3.8V @ 230µA 180 nC @ 10 V ±20V 13000 pF @ 40 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDB0250N807L

Таблицы данных

FDB0250N807L

FDB0250N807L

MOSFET N-CH 80V 240A TO263-7

onsemi

3111 3.69
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 240A (Tc) 8V, 10V 2.2mOhm @ 30A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 15400 pF @ 40 V - 3.8W (Ta), 214W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCP130N60

Таблицы данных

FCP130N60

FCP130N60

MOSFET N-CH 600V 28A TO220-3

onsemi

2523 3.70
- +

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Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 130mOhm @ 14A, 10V 3.5V @ 250µA 70 nC @ 10 V ±20V 3590 pF @ 380 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK110E65Z,S1X

Таблицы данных

TK110E65Z,S1X

TK110E65Z,S1X

650V DTMOS VI TO-220 110MOHM

Toshiba Semiconductor and Storage

3282 4.52
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 110mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 190W (Tc) 150°C Through Hole
SIHF080N60E-GE3

Таблицы данных

SIHF080N60E-GE3

SIHF080N60E-GE3

E SERIES POWER MOSFET TO-220 FUL

Vishay Siliconix

2840 4.56
- +

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Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V 80mOhm @ 17A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 2557 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDBL86063 FDBL86063

FDBL86063

MOSFET N-CH 100V 240A 8HPSOF

onsemi

2353 7.19
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 240A (Tc) 10V 2.6mOhm @ 80A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 5120 pF @ 50 V - 357W (Tj) -55°C ~ 175°C (TJ) Surface Mount
NTMFS08N2D5C

Таблицы данных

NTMFS08N2D5C

NTMFS08N2D5C

MOSFET N-CH 80V 166A POWER56

onsemi

3247 7.20
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 166A (Tc) 6V, 10V 2.7mOhm @ 68A, 10V 4V @ 380µA 84 nC @ 10 V ±20V 6240 pF @ 40 V - 138W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2SJ297-91L 2SJ297-91L

2SJ297-91L

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc

3721 3.94
- +

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Bulk * Obsolete - - - - - - - - - - - - - -
FDMS003N08C

Таблицы данных

FDMS003N08C

FDMS003N08C

MOSFET N-CH 80V 22A/147A POWER56

onsemi

3177 7.24
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 22A (Ta), 147A (Tc) 6V, 10V 3.1mOhm @ 56A, 10V 4V @ 310µA 73 nC @ 10 V ±20V 5350 pF @ 40 V - 2.7W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB65R115CFD7AATMA1

Таблицы данных

IPB65R115CFD7AATMA1

IPB65R115CFD7AATMA1

AUTOMOTIVE_COOLMOS PG-TO263-3

Infineon Technologies

2141 7.22
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 115mOhm @ 9.7A, 10V 4.5V @ 490µA 41 nC @ 10 V ±20V 1950 pF @ 400 V - 114W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPTC019N10NM5ATMA1

Таблицы данных

IPTC019N10NM5ATMA1

IPTC019N10NM5ATMA1

MOSFET N-CH 100V 31A/279A HDSOP

Infineon Technologies

3177 7.46
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 31A (Ta), 279A (Tc) 6V, 10V 1.9mOhm @ 100A, 10V 3.8V @ 210µA 160 nC @ 10 V ±20V 12000 pF @ 50 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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