Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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STP12N65M5MOSFET N-CH 650V 8.5A TO220AB |
948 | 3.06 |
ДобавитьРасследования |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 8.5A (Tc) | 10V | 430mOhm @ 4.3A, 10V | 5V @ 250µA | 22 nC @ 10 V | ±25V | 900 pF @ 100 V | - | 70W (Tc) | 150°C (TJ) | Through Hole |
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SIHP21N60EF-BE3MOSFET N-CH 600V 21A TO220AB |
3790 | 3.06 |
ДобавитьРасследования |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 176mOhm @ 11A, 10V | 4V @ 250µA | 84 nC @ 10 V | ±30V | 2030 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDB045AN08A0-F085MOSFET N-CH 75V 19A TO263AB |
3268 | 4.89 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 19A (Ta) | 6V, 10V | 4.5mOhm @ 80A, 10V | 4V @ 250µA | 138 nC @ 10 V | ±20V | 6600 pF @ 25 V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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STW6N95K5MOSFET N-CH 950V 9A TO247-3 |
2970 | 3.07 |
ДобавитьРасследования |
Tube | SuperMESH5™ | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 9A (Tc) | 10V | 1.25Ohm @ 3A, 10V | 5V @ 100µA | 13 nC @ 10 V | ±30V | 450 pF @ 100 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SUP50020E-GE3MOSFET N-CH 60V 120A TO220AB |
3046 | 3.07 |
ДобавитьРасследования |
Tube | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 7.5V, 10V | 2.4mOhm @ 30A, 10V | 4V @ 250µA | 128 nC @ 10 V | ±20V | - | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SIHP14N50D-E3MOSFET N-CH 500V 14A TO220AB |
2320 | 3.08 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Tc) | 10V | 400mOhm @ 7A, 10V | 5V @ 250µA | 58 nC @ 10 V | ±30V | 1144 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SQJ456EP-T1_GE3MOSFET N-CH 100V 32A PPAK SO-8 |
2464 | 5.45 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 32A (Tc) | 6V, 10V | 26mOhm @ 9.3A, 10V | 3.5V @ 250µA | 63 nC @ 10 V | ±20V | 3342 pF @ 25 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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PSMN7R8-100PSEQMOSFET N-CH 100V 100A TO220AB |
3358 | 3.10 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tj) | 10V | 7.8mOhm @ 25A, 10V | 4V @ 1mA | 128 nC @ 10 V | ±20V | 7110 pF @ 50 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SIHA240N60E-GE3MOSFET N-CH 600V 12A TO220 |
3400 | 3.10 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 240mOhm @ 5.5A, 10V | 5V @ 250µA | 23 nC @ 10 V | ±30V | 783 pF @ 100 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SPA07N60C3XKSA1MOSFET N-CH 650V 7.3A TO220-FP |
2924 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 250µA | 27 nC @ 10 V | ±20V | 790 pF @ 25 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STFU24N60M2MOSFET N-CH 600V 18A TO220FP |
2422 | 3.13 |
ДобавитьРасследования |
Tube | MDmesh™ M2 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±25V | 1060 pF @ 100 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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PSMN8R5-100PSQMOSFET N-CH 100V 100A TO220AB |
3335 | 3.14 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tj) | 10V | 8.5mOhm @ 25A, 10V | 4V @ 1mA | 111 nC @ 10 V | ±20V | 5512 pF @ 50 V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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AOTF15S65LMOSFET N-CH 650V 15A TO220-3F |
3413 | 3.15 |
ДобавитьРасследования |
Tube | aMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 290mOhm @ 7.5A, 10V | 4V @ 250µA | 17.2 nC @ 10 V | ±30V | 841 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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NVMFSC0D9N04CMOSFET N-CH 40V 48.9A/313A 8DFN |
3056 | 6.32 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 48.9A (Ta), 313A (Tc) | 10V | 0.87mOhm @ 50A, 10V | 3.5V @ 250µA | 86 nC @ 10 V | ±20V | 6100 pF @ 25 V | - | 4.1W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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STF8N65M5MOSFET N-CH 650V 7A TO220FP |
3620 | 3.18 |
ДобавитьРасследования |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 5V @ 250µA | 15 nC @ 10 V | ±25V | 690 pF @ 100 V | - | 25W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP65R310CFDXKSA1MOSFET N-CH 650V 11.4A TO220-3 |
3044 | 3.18 |
ДобавитьРасследования |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 104.2W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP100N10F7MOSFET N CH 100V 80A TO-220 |
2052 | 3.19 |
ДобавитьРасследования |
Tube | DeepGATE™, STripFET™ VII | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 10V | 8mOhm @ 40A, 10V | 4.5V @ 250µA | 61 nC @ 10 V | ±20V | 4369 pF @ 50 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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STFU16N65M2MOSFET N-CH 650V 11A TO220FP |
3127 | 3.20 |
ДобавитьРасследования |
Tube | MDmesh™ M2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 19.5 nC @ 10 V | ±25V | 718 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHA15N60E-E3MOSFET N-CH 600V 15A TO220 |
2544 | 3.21 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 76 nC @ 10 V | ±30V | 1350 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SUP70040E-GE3MOSFET N-CH 100V 120A TO220AB |
3478 | 3.21 |
ДобавитьРасследования |
Bulk | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 7.5V, 10V | 4mOhm @ 20A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 5100 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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