Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHD14N60E-BE3MOSFET N-CH 600V 13A TO252AA |
3155 | 2.40 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 309mOhm @ 7A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±30V | 1205 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPA60R360P7XKSA1MOSFET N-CHANNEL 650V 9A TO220 |
3563 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 9A (Tc) | 10V | 360mOhm @ 2.7A, 10V | 4V @ 140µA | 13 nC @ 10 V | ±20V | 555 pF @ 400 V | - | 22W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPB65R190CFDATMA1MOSFET N-CH 650V 17.5A D2PAK |
2350 | 2.42 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 730µA | 68 nC @ 10 V | ±20V | 1850 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STB28N60M2MOSFET N-CH 600V 22A D2PAK |
3059 | 4.07 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ II Plus | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 22A (Tc) | 10V | 150mOhm @ 11A, 10V | 4V @ 250µA | 36 nC @ 10 V | ±25V | 1440 pF @ 100 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHU6N80E-GE3MOSFET N-CH 800V 5.4A IPAK |
2245 | 2.45 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.4A (Tc) | 10V | 940mOhm @ 3A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±30V | 827 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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TSM60NB1R4CH C5GMOSFET N-CHANNEL 600V 3A TO251 |
2050 | 2.46 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3A (Tc) | 10V | 1.4Ohm @ 900mA, 10V | 4V @ 250µA | 7.12 nC @ 10 V | ±30V | 257.3 pF @ 100 V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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NTMJS1D5N04CLTWGMOSFET N-CH 40V 38A/200A 8LFPAK |
3514 | 4.90 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 38A (Ta), 200A (Tc) | 4.5V, 10V | 1.4mOhm @ 50A, 10V | 2V @ 130µA | 70 nC @ 10 V | ±20V | 4300 pF @ 20 V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPU95R750P7AKMA1MOSFET N-CH 950V 9A TO251-3 |
1660 | 2.47 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 9A (Tc) | 10V | 750mOhm @ 4.5A, 10V | 3.5V @ 220µA | 23 nC @ 10 V | ±20V | 712 pF @ 400 V | - | 73W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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NTMJS1D6N06CLTWGMOSFET N-CH 60V 38A/250A 8LFPAK |
3420 | 4.93 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 38A (Ta), 250A (Tc) | 4.5V, 10V | 1.36mOhm @ 50A, 10V | 2V @ 250µA | 91 nC @ 10 V | ±20V | 6660 pF @ 25 V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHP12N65E-GE3MOSFET N-CH 650V 12A TO220AB |
2558 | 2.48 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±30V | 1224 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHP14N60E-GE3MOSFET N-CH 600V 13A TO220AB |
2529 | 2.48 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 309mOhm @ 7A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±30V | 1205 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP80R600P7XKSA1MOSFET N-CH 800V 8A TO220-3 |
2971 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 3.5V @ 170µA | 20 nC @ 10 V | ±20V | 570 pF @ 500 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDMS86180MOSFET N-CH 100V 151A POWER56 |
3267 | 4.95 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 151A (Tc) | 6V, 10V | 3.2mOhm @ 67A, 10V | 4V @ 370µA | 54 nC @ 6 V | ±20V | 6215 pF @ 50 V | - | 138W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHA14N60E-E3MOSFET N-CHANNEL 600V 13A TO220 |
3425 | 2.49 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 309mOhm @ 7A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±30V | 1205 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPT029N08N5ATMA1MOSFET N-CH 80V 52A/169A HSOF-8 |
3321 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | OptiMOS™ 5 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 52A (Ta), 169A (Tc) | 6V, 10V | 2.9mOhm @ 150A, 10V | 3.8V @ 108µA | 87 nC @ 10 V | ±20V | 6500 pF @ 40 V | - | 168W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHB12N50E-GE3MOSFET N-CH 500V 10.5A D2PAK |
2332 | 2.50 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 10.5A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±30V | 886 pF @ 100 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SQM120N03-1M5L_GE3MOSFET N-CH 30V 120A TO263 |
3696 | 4.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 120A (Tc) | 4.5V, 10V | 1.5mOhm @ 30A, 10V | 2.5V @ 250µA | 270 nC @ 10 V | ±20V | 15605 pF @ 15 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFBF20PBFMOSFET N-CH 900V 1.7A TO220AB |
3483 | 2.52 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 1.7A (Tc) | 10V | 8Ohm @ 1A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 490 pF @ 25 V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRF4104SPBFMOSFET N-CH 40V 75A D2PAK |
2326 | 2.53 |
ДобавитьРасследования |
Tube | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 10V | 5.5mOhm @ 75A, 10V | 4V @ 250µA | 100 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPA60R380P6XKSA1MOSFET N-CH 600V 10.6A TO220-FP |
3183 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ P6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 4.5V @ 320µA | 19 nC @ 10 V | ±20V | 877 pF @ 100 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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