Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IRFI820GPBFMOSFET N-CH 500V 2.1A TO220-3 |
2808 | 2.92 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.1A (Tc) | 10V | 3Ohm @ 1.3A, 10V | 4V @ 250µA | 24 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRF840ALPBFMOSFET N-CH 500V 8A I2PAK |
2977 | 2.92 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±30V | 1018 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRLI630GPBFMOSFET N-CH 200V 6.2A TO220-3 |
2460 | 2.92 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 6.2A (Tc) | 4V, 5V | 400mOhm @ 3.7A, 5V | 2V @ 250µA | 40 nC @ 10 V | ±10V | 1100 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP023N04NGXKSA1MOSFET N-CH 40V 90A TO220-3 |
3371 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 10V | 2.3mOhm @ 90A, 10V | 4V @ 95µA | 120 nC @ 10 V | ±20V | 10000 pF @ 20 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPA057N06N3GXKSA1MOSFET N-CH 60V 60A TO220-3-31 |
3472 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 10V | 5.7mOhm @ 60A, 10V | 4V @ 58µA | 82 nC @ 10 V | ±20V | 6600 pF @ 30 V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SIHF12N60E-E3MOSFET N-CH 600V 12A TO220 |
3250 | 2.95 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP7NK80ZMOSFET N-CH 800V 5.2A TO220AB |
3833 | 2.96 |
ДобавитьРасследования |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.2A (Tc) | 10V | 1.8Ohm @ 2.6A, 10V | 4.5V @ 100µA | 56 nC @ 10 V | ±30V | 1138 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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MCP60P06-BPP-CHANNEL MOSFET, TO-220AB(H) PA |
3416 | 2.96 |
ДобавитьРасследования |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 10V | 18mOhm @ 20A, 10V | 3.5V @ 250µA | 75 nC @ 10 V | ±20V | 5814 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FDBL0330N80MOSFET N-CH 80V 220A 8HPSOF |
3579 | 5.91 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 220A (Tc) | 10V | 3mOhm @ 80A, 10V | 4V @ 250µA | 112 nC @ 10 V | ±20V | 6320 pF @ 40 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NTMJS1D0N04CTWGMOSFET N-CH 40V 46A/300A 8LFPAK |
3646 | 5.91 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 46A (Ta), 300A (Tc) | 10V | 0.92mOhm @ 50A, 10V | 3.5V @ 190µA | 86 nC @ 10 V | ±20V | 6100 pF @ 25 V | - | 3.9W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHH180N60E-T1-GE3MOSFET N-CH 600V 19A PPAK 8 X 8 |
3496 | 5.26 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 180mOhm @ 9.5A, 10V | 5V @ 250µA | 33 nC @ 10 V | ±30V | 1085 pF @ 100 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STU5N95K3MOSFET N-CH 950V 4A IPAK |
2540 | 3.00 |
ДобавитьРасследования |
Tube | SuperMESH3™ | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 4A (Tc) | 10V | 3.5Ohm @ 2A, 10V | 5V @ 100µA | 19 nC @ 10 V | ±30V | 460 pF @ 25 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STF9N80K5MOSFET N-CH 800V 7A TO220FP |
2213 | 3.00 |
ДобавитьРасследования |
Tube | MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 7A (Tc) | 10V | 900mOhm @ 3.5A, 10V | 5V @ 100µA | 12 nC @ 10 V | ±30V | 340 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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EPC2218ATRANS GAN 100V .0032OHM AECQ101 |
3446 | 5.71 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FQP7N80CMOSFET N-CH 800V 6.6A TO220-3 |
2591 | 3.02 |
ДобавитьРасследования |
Bulk,Tube | QFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 800 V | 6.6A (Tc) | 10V | 1.9Ohm @ 3.3A, 10V | 5V @ 250µA | 35 nC @ 10 V | ±30V | 1680 pF @ 25 V | - | 167W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFSL3306PBFMOSFET N-CH 60V 120A TO262 |
2615 | 3.02 |
ДобавитьРасследования |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 4.2mOhm @ 75A, 10V | 4V @ 150µA | 120 nC @ 10 V | ±20V | 4520 pF @ 50 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRL60SC216ARMA1MOSFET N-CH 60V 324A TO263-7 |
3303 | 4.83 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 324A (Tc) | 4.5V, 10V | 1.5mOhm @ 100A, 10V | 2.4V @ 250µA | 218 nC @ 4.5 V | ±20V | 16000 pF @ 30 V | - | 2.4W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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TK14A65W5,S5XMOSFET N-CH 650V 13.7A TO220SIS |
2672 | 3.03 |
ДобавитьРасследования |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 13.7A (Ta) | 10V | 300mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40 nC @ 10 V | ±30V | 1300 pF @ 300 V | - | 40W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFBC20SPBFMOSFET N-CH 600V 2.2A D2PAK |
3448 | 3.05 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.2A (Tc) | 10V | 4.4Ohm @ 1.3A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STF18NM60NMOSFET N-CH 600V 13A TO220FP |
3227 | 3.05 |
ДобавитьРасследования |
Tube | MDmesh™ II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 285mOhm @ 6.5A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±25V | 1000 pF @ 50 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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