Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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FDP027N08B-F102MOSFET N-CH 80V 120A TO220-3 |
3006 | 3.41 |
ДобавитьРасследования |
Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 2.7mOhm @ 100A, 10V | 4.5V @ 250µA | 178 nC @ 10 V | ±20V | 13530 pF @ 40 V | - | 246W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPA032N06N3GXKSA1MOSFET N-CH 60V 84A TO220-3-31 |
3795 | 3.43 |
ДобавитьРасследования |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 84A (Tc) | 10V | 3.2mOhm @ 80A, 10V | 4V @ 118µA | 165 nC @ 10 V | ±20V | 13000 pF @ 30 V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SIHG14N50D-GE3MOSFET N-CH 500V 14A TO247AC |
3957 | 3.44 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Tc) | 10V | 400mOhm @ 7A, 10V | 5V @ 250µA | 58 nC @ 10 V | ±30V | 1144 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STF8N90K5MOSFET N-CH 900V 8A TO220FP |
2399 | 3.44 |
ДобавитьРасследования |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 8A (Tc) | 10V | - | 5V @ 100µA | - | ±30V | - | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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TK12E80W,S1XMOSFET N-CH 800V 11.5A TO220 |
2125 | 3.44 |
ДобавитьРасследования |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 11.5A (Ta) | 10V | 450mOhm @ 5.8A, 10V | 4V @ 570µA | 23 nC @ 10 V | ±20V | 1400 pF @ 300 V | - | 165W (Tc) | 150°C | Through Hole |
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Таблицы данных |
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IPP65R225C7XKSA1MOSFET N-CH 650V 11A TO220-3 |
3428 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 225mOhm @ 4.8A, 10V | 4V @ 240µA | 20 nC @ 10 V | ±20V | 996 pF @ 400 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP140NF55MOSFET N-CH 55V 80A TO220AB |
2766 | 3.46 |
ДобавитьРасследования |
Tube | STripFET™ II | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 8mOhm @ 40A, 10V | 4V @ 250µA | 142 nC @ 10 V | ±20V | 5300 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPB60R120C7ATMA1MOSFET N-CH 650V 19A TO263-3 |
3104 | 6.29 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 19A (Tc) | 10V | 120mOhm @ 7.8A, 10V | 4V @ 390µA | 34 nC @ 10 V | ±20V | 1500 pF @ 400 V | - | 92W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHG15N60E-GE3MOSFET N-CH 600V 15A TO247AC |
3547 | 3.48 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±30V | 1350 pF @ 100 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP10LN80K5MOSFET N-CH 800V 8A TO220 |
3436 | 3.50 |
ДобавитьРасследования |
Tube | MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 630mOhm @ 4A, 10V | 5V @ 100µA | 15 nC @ 10 V | ±30V | 427 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SUP90140E-GE3MOSFET N-CH 200V 90A TO220AB |
2537 | 3.50 |
ДобавитьРасследования |
Tube | ThunderFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 90A (Tc) | 7.5V, 10V | 17mOhm @ 30A, 10V | 4V @ 250µA | 96 nC @ 10 V | ±20V | 4132 pF @ 100 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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STP9NK70ZFPMOSFET N-CH 700V 7.5A TO220FP |
935 | 3.52 |
ДобавитьРасследования |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 7.5A (Tc) | 10V | 1.2Ohm @ 4A, 10V | 4.5V @ 100µA | 68 nC @ 10 V | ±30V | 1370 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPI90N04S402AKSA1MOSFET N-CH 40V 90A TO262-3 |
10350 | 3.52 |
ДобавитьРасследования |
Bulk,Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 10V | 2.5mOhm @ 90A, 10V | 4V @ 95µA | 118 nC @ 10 V | ±20V | 9430 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFP440PBFMOSFET N-CH 500V 8.8A TO247-3 |
2377 | 3.53 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8.8A (Tc) | 10V | 850mOhm @ 5.3A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRLU024PBFMOSFET N-CH 60V 14A TO251AA |
2275 | 1.78 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 14A (Tc) | 4V, 5V | 100mOhm @ 8.4A, 5V | 2V @ 250µA | 18 nC @ 5 V | ±10V | 870 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHP11N80E-GE3MOSFET N-CH 800V 12A TO220AB |
3869 | 3.70 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 12A (Tc) | 10V | 440mOhm @ 5.5A, 10V | 4V @ 250µA | 88 nC @ 10 V | ±30V | 1670 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STF14N80K5MOSFET N-CH 800V 12A TO220FP |
2243 | 3.70 |
ДобавитьРасследования |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 12A (Tc) | 10V | 445mOhm @ 6A, 10V | 5V @ 100µA | 22 nC @ 10 V | ±30V | 620 pF @ 100 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP80NF55L-06MOSFET N-CH 55V 80A TO220AB |
2389 | 3.71 |
ДобавитьРасследования |
Tube | STripFET™ II | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 5V, 10V | 6.5mOhm @ 40A, 10V | 1V @ 250µA | 136 nC @ 5 V | ±16V | 4850 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SIHP15N65E-GE3MOSFET N-CH 650V 15A TO220AB |
3215 | 3.53 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 96 nC @ 10 V | ±30V | 1640 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STL33N60DM6MOSFET N-CH 600V 21A PWRFLAT HV |
2911 | 5.95 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ M6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 140mOhm @ 10.5A, 10V | 4.75V @ 250µA | 35 nC @ 10 V | ±25V | 1500 pF @ 100 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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