Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTD5C648NLT4G

Таблицы данных

NTD5C648NLT4G

NTD5C648NLT4G

MOSFET N-CH 60V 22A/91A DPAK

onsemi

2935 5.15
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 60 V 22A (Ta), 91A (Tc) 4.5V, 10V 4.1mOhm @ 45A, 10V 2.1V @ 250µA 17 nC @ 10 V ±20V 2900 pF @ 30 V - 4.4W (Ta), 76W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFI720GPBF

Таблицы данных

IRFI720GPBF

IRFI720GPBF

MOSFET N-CH 400V 2.6A TO220-3

Vishay Siliconix

3129 2.59
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 2.6A (Tc) 10V 1.8Ohm @ 1.6A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 410 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOT190A60CL AOT190A60CL

AOT190A60CL

MOSFET N-CH 600V 20A TO220

Alpha & Omega Semiconductor Inc.

2839 2.60
- +

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Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 7.6A, 10V 4.6V @ 250µA 34 nC @ 10 V ±30V 1935 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDB150N10

Таблицы данных

FDB150N10

FDB150N10

MOSFET N-CH 100V 57A D2PAK

onsemi

2789 4.17
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) 10V 15mOhm @ 49A, 10V 4.5V @ 250µA 69 nC @ 10 V ±20V 4760 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC40APBF

Таблицы данных

IRFBC40APBF

IRFBC40APBF

MOSFET N-CH 600V 6.2A TO220AB

Vishay Siliconix

2809 2.61
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 1036 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP140N6F7

Таблицы данных

STP140N6F7

STP140N6F7

MOSFET N-CH 60V 80A TO220

STMicroelectronics

3527 2.62
- +

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Tube STripFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 3.5mOhm @ 40A, 10V 4V @ 250µA 55 nC @ 10 V ±20V 3100 pF @ 10 V - 158W (Tc) 175°C (TJ) Through Hole
STL140N4LLF5

Таблицы данных

STL140N4LLF5

STL140N4LLF5

MOSFET N-CH 40V 140A POWERFLAT

STMicroelectronics

3209 4.38
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® STripFET™ V Active N-Channel MOSFET (Metal Oxide) 40 V 140A (Tc) 4.5V, 10V 2.75mOhm @ 16A, 10V 1V @ 250µA 45 nC @ 4.5 V ±22V 5900 pF @ 25 V - 80W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA6N80E-GE3

Таблицы данных

SIHA6N80E-GE3

SIHA6N80E-GE3

MOSFET N-CH 800V 5.4A TO220

Vishay Siliconix

3465 2.63
- +

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Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 5.4A (Tc) 10V 940mOhm @ 3A, 10V 4V @ 250µA 44 nC @ 10 V ±30V 827 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA12N60E-E3

Таблицы данных

SIHA12N60E-E3

SIHA12N60E-E3

MOSFET N-CH 600V 12A TO220

Vishay Siliconix

3696 2.65
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMS8350L

Таблицы данных

FDMS8350L

FDMS8350L

MOSFET N-CH 40V 47A/200A POWER56

onsemi

2085 5.31
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 47A (Ta), 200A (Tc) 4.5V, 10V 0.85mOhm @ 47A, 10V 3V @ 250µA 242 nC @ 10 V ±20V 17500 pF @ 20 V - 2.7W (Ta), 113W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB17N25S3100ATMA1

Таблицы данных

IPB17N25S3100ATMA1

IPB17N25S3100ATMA1

MOSFET N-CH 250V 17A TO263-3

Infineon Technologies

3338 2.64
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 250 V 17A (Tc) 10V 100mOhm @ 17A, 10V 4V @ 54µA 19 nC @ 10 V ±20V 1500 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHD240N60E-GE3

Таблицы данных

SIHD240N60E-GE3

SIHD240N60E-GE3

MOSFET N-CH 600V 12A DPAK

Vishay Siliconix

2435 2.67
- +

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Расследования

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 240mOhm @ 5.5A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 783 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7868ADP-T1-E3

Таблицы данных

SI7868ADP-T1-E3

SI7868ADP-T1-E3

MOSFET N-CH 20V 40A PPAK SO-8

Vishay Siliconix

2161 4.72
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 40A (Tc) 4.5V, 10V 2.25mOhm @ 20A, 10V 1.6V @ 250µA 150 nC @ 10 V ±16V 6110 pF @ 10 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP7N80K5

Таблицы данных

STP7N80K5

STP7N80K5

MOSFET N-CH 800V 6A TO220

STMicroelectronics

3501 2.68
- +

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Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 1.2Ohm @ 3A, 10V 5V @ 100µA 13.4 nC @ 10 V ±30V 360 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBG30PBF-BE3 IRFBG30PBF-BE3

IRFBG30PBF-BE3

MOSFET N-CH 1000V 3.1A TO220AB

Vishay Siliconix

3019 2.68
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 3.1A (Tc) 10V 5Ohm @ 1.9A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 980 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP40NF10

Таблицы данных

STP40NF10

STP40NF10

MOSFET N-CH 100V 50A TO220AB

STMicroelectronics

2594 2.70
- +

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Tube STripFET™ II Active N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 10V 28mOhm @ 25A, 10V 4V @ 250µA 62 nC @ 10 V ±20V 2180 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB180N06S4H1ATMA2

Таблицы данных

IPB180N06S4H1ATMA2

IPB180N06S4H1ATMA2

MOSFET N-CH 60V 180A TO263-7

Infineon Technologies

3912 1.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 180A (Tc) 10V 1.7mOhm @ 100A, 10V 4V @ 200µA 270 nC @ 10 V ±20V 21900 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB120N06S4H1ATMA2

Таблицы данных

IPB120N06S4H1ATMA2

IPB120N06S4H1ATMA2

MOSFET N-CH 60V 120A TO263-3

Infineon Technologies

3779 4.99
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.4mOhm @ 100A, 10V 4V @ 200µA 270 nC @ 10 V ±20V 21900 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STH10N80K5-2AG STH10N80K5-2AG

STH10N80K5-2AG

MOSFET N-CH 800V 8A H2PAK-2

STMicroelectronics

3159 4.62
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 680mOhm @ 4A, 10V 5V @ 100µA 17.3 nC @ 10 V ±30V 426 pF @ 100 V - 121W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STH240N10F7-2

Таблицы данных

STH240N10F7-2

STH240N10F7-2

MOSFET N-CH 100V 180A H2PAK-2

STMicroelectronics

2457 4.63
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® STripFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 2.5mOhm @ 60A, 10V 4.5V @ 250µA 160 nC @ 10 V ±20V 11550 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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