Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STP200NF03

Таблицы данных

STP200NF03

STP200NF03

MOSFET N-CH 30V 120A TO220AB

STMicroelectronics

2910 3.58
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Tube STripFET™ III Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 10V 3.6mOhm @ 60A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 4950 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
STF24NM60N

Таблицы данных

STF24NM60N

STF24NM60N

MOSFET N-CH 600V 17A TO220FP

STMicroelectronics

3817 3.60
- +

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Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 190mOhm @ 8A, 10V 4V @ 250µA 46 nC @ 10 V ±30V 1400 pF @ 50 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHH120N60E-T1-GE3

Таблицы данных

SIHH120N60E-T1-GE3

SIHH120N60E-T1-GE3

MOSFET N-CH 600V 24A PPAK 8 X 8

Vishay Siliconix

2356 6.38
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® E Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 44 nC @ 10 V ±30V 1600 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STI28N60M2

Таблицы данных

STI28N60M2

STI28N60M2

MOSFET N-CH 600V 22A I2PAK

STMicroelectronics

2328 3.63
- +

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Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 150mOhm @ 11A, 10V 4V @ 250µA 36 nC @ 10 V ±25V 1440 pF @ 100 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP22N60EF-GE3

Таблицы данных

SIHP22N60EF-GE3

SIHP22N60EF-GE3

MOSFET N-CH 600V 19A TO220AB

Vishay Siliconix

2190 3.66
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Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 182mOhm @ 11A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1423 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF150N65F

Таблицы данных

FCPF150N65F

FCPF150N65F

MOSFET N-CH 650V 14.9A TO220F

onsemi

2573 1.00
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Bulk,Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 14.9A (Tc) 10V 150mOhm @ 12A, 10V 5V @ 2.4mA 94 nC @ 10 V ±20V 3737 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP034N08N5AKSA1

Таблицы данных

IPP034N08N5AKSA1

IPP034N08N5AKSA1

MOSFET N-CH 80V 120A TO220-3

Infineon Technologies

3882 3.72
- +

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Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 3.4mOhm @ 100A, 10V 3.8V @ 108µA 87 nC @ 10 V ±20V 6240 pF @ 40 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPL65R130C7AUMA1

Таблицы данных

IPL65R130C7AUMA1

IPL65R130C7AUMA1

MOSFET N-CH 650V 15A 4VSON

Infineon Technologies

3691 6.77
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 130mOhm @ 4.4A, 10V 4V @ 440µA 35 nC @ 10 V ±20V 1670 pF @ 400 V - 102W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPI024N06N3GXKSA1

Таблицы данных

IPI024N06N3GXKSA1

IPI024N06N3GXKSA1

MOSFET N-CH 60V 120A TO262-3

Infineon Technologies

2808 3.73
- +

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Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.4mOhm @ 100A, 10V 4V @ 196µA 275 nC @ 10 V ±20V 23000 pF @ 30 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHB22N60EF-GE3

Таблицы данных

SIHB22N60EF-GE3

SIHB22N60EF-GE3

MOSFET N-CH 600V 19A D2PAK

Vishay Siliconix

2968 3.73
- +

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Расследования

Bulk EF Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 182mOhm @ 11A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1423 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP10N95K5

Таблицы данных

STP10N95K5

STP10N95K5

MOSFET N-CH 950V 8A TO220

STMicroelectronics

2414 3.75
- +

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Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 950 V 8A (Tc) 10V 800mOhm @ 4A, 10V 5V @ 100µA 22 nC @ 10 V ±30V 630 pF @ 100 V - 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMFSC1D6N06CL

Таблицы данных

NVMFSC1D6N06CL

NVMFSC1D6N06CL

MOSFET N-CH 60V 35A/224A 8DFN

onsemi

3165 6.89
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 35A (Ta), 224A (Tc) - - 2V @ 250µA 91 nC @ 10 V ±20V 6660 pF @ 25 V - 4.1W (Ta), 166W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP150NF55

Таблицы данных

STP150NF55

STP150NF55

MOSFET N-CH 55V 120A TO220AB

STMicroelectronics

2585 3.77
- +

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Tube STripFET™ II Last Time Buy N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 6mOhm @ 60A, 10V 4V @ 250µA 190 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL11N50APBF

Таблицы данных

IRFSL11N50APBF

IRFSL11N50APBF

MOSFET N-CH 500V 11A TO262-3

Vishay Siliconix

3430 3.79
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 550mOhm @ 6.6A, 10V 4V @ 250µA 51 nC @ 10 V ±30V 1426 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP85NF55

Таблицы данных

STP85NF55

STP85NF55

MOSFET N-CH 55V 80A TO220AB

STMicroelectronics

3393 3.79
- +

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Tube STripFET™ II Last Time Buy N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8mOhm @ 40A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 3700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
STB36N60M6

Таблицы данных

STB36N60M6

STB36N60M6

MOSFET N-CH 600V 30A D2PAK

STMicroelectronics

2676 6.32
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 99mOhm @ 15A, 10V 4.75V @ 250µA 44.3 nC @ 10 V ±25V 1960 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STH315N10F7-2

Таблицы данных

STH315N10F7-2

STH315N10F7-2

MOSFET N-CH 100V 180A H2PAK-2

STMicroelectronics

3202 6.39
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, DeepGATE™, STripFET™ VII Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 2.3mOhm @ 60A, 10V 4.5V @ 250µA 180 nC @ 10 V ±20V 12800 pF @ 25 V - 315W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFA7N80P

Таблицы данных

IXFA7N80P

IXFA7N80P

MOSFET N-CH 800V 7A TO263

IXYS

3980 3.88
- +

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Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 1.44Ohm @ 3.5A, 10V 5V @ 1mA 32 nC @ 10 V ±30V 1890 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7738DP-T1-E3

Таблицы данных

SI7738DP-T1-E3

SI7738DP-T1-E3

MOSFET N-CH 150V 30A PPAK SO-8

Vishay Siliconix

2293 3.32
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 30A (Tc) 10V 38mOhm @ 7.7A, 10V 4V @ 250µA 53 nC @ 10 V ±20V 2100 pF @ 75 V - 5.4W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK100A08N1,S4X

Таблицы данных

TK100A08N1,S4X

TK100A08N1,S4X

MOSFET N-CH 80V 100A TO220SIS

Toshiba Semiconductor and Storage

3528 3.93
- +

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Расследования

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 10V 3.2mOhm @ 50A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 9000 pF @ 40 V - 45W (Tc) 150°C (TJ) Through Hole
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