Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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TPH4R008NH,L1QMOSFET N-CH 80V 60A 8SOP |
2807 | 2.95 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | U-MOSVIII-H | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 60A (Tc) | 10V | 4mOhm @ 30A, 10V | 4V @ 1mA | 59 nC @ 10 V | ±20V | 5300 pF @ 40 V | - | 1.6W (Ta), 78W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STB11NM60T4MOSFET N-CH 650V 11A D2PAK |
3592 | 4.63 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 450mOhm @ 5.5A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±30V | 1000 pF @ 25 V | - | 160W (Tc) | -65°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STB14NK50ZT4MOSFET N-CH 500V 14A D2PAK |
2663 | 4.63 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Tc) | 10V | 380mOhm @ 6A, 10V | 4.5V @ 100µA | 92 nC @ 10 V | ±30V | 2000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDB86363-F085MOSFET N-CH 80V 110A D2PAK |
2897 | 4.45 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 110A (Tc) | 10V | 2.4mOhm @ 80A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 10000 pF @ 40 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFI9Z24GPBFMOSFET P-CH 60V 8.5A TO220-3 |
2493 | 2.79 |
ДобавитьРасследования |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 8.5A (Tc) | 10V | 280mOhm @ 5.1A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 570 pF @ 25 V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTP4N80PMOSFET N-CH 800V 3.6A TO220AB |
3776 | 2.80 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3.6A (Tc) | 10V | 3.4Ohm @ 500mA, 10V | 5.5V @ 100µA | 14.2 nC @ 10 V | ±30V | 750 pF @ 25 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SUP90220E-GE3MOSFET N-CH 200V 64A TO220AB |
3400 | 2.80 |
ДобавитьРасследования |
Tube | ThunderFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 64A (Tc) | 7.5V, 10V | - | 4V @ 250µA | 48 nC @ 10 V | ±20V | 1950 pF @ 100 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SIHH14N60EF-T1-GE3MOSFET N-CH 600V 15A PPAK 8 X 8 |
3672 | 4.95 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 266mOhm @ 7A, 10V | 4V @ 250µA | 84 nC @ 10 V | ±30V | 1449 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHP12N60E-E3MOSFET N-CH 600V 12A TO220AB |
2162 | 2.82 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHP12N60E-GE3MOSFET N-CH 600V 12A TO220AB |
3794 | 2.82 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STF13NK50ZMOSFET N-CH 500V 11A TO220FP |
910 | 2.84 |
ДобавитьРасследования |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 11A (Tc) | 10V | 480mOhm @ 6.5A, 10V | 4.5V @ 100µA | 47 nC @ 10 V | ±30V | 1600 pF @ 25 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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BSC021N08NS5ATMA1MOSFET TRENCH 80V TSON-8 |
2484 | 5.19 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 100A (Tc) | 6V, 10V | 2.1mOhm @ 50A, 10V | 3.8V @ 146µA | 29 nC @ 10 V | ±20V | 8600 pF @ 40 V | Standard | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF60SC241ARMA1MOSFET N-CH 60V 360A TO263-7 |
3038 | 4.59 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 360A (Tc) | 6V, 10V | 1.3mOhm @ 100A, 10V | 3.7V @ 250µA | 388 nC @ 10 V | ±20V | 16000 pF @ 30 V | - | 2.4W (Ta), 417W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NVMFSC0D9N04CLMOSFET N-CH 40V 50A/316A 8DFN |
3737 | 5.73 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Ta), 316A (Tc) | 10V | 0.87mOhm @ 50A, 10V | 3.5V @ 250µA | 86 nC @ 10 V | ±20V | 6100 pF @ 25 V | - | 4.1W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFS4020TRLPBFMOSFET N-CH 200V 18A D2PAK |
3571 | 2.36 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 105mOhm @ 11A, 10V | 4.9V @ 100µA | 29 nC @ 10 V | ±20V | 1200 pF @ 50 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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RCX120N25MOSFET N-CH 250V 12A TO220FM |
2646 | 2.88 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 12A (Ta) | 10V | - | - | - | ±30V | - | - | 2.23W (Ta), 40W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFD9220PBFMOSFET P-CH 200V 560MA 4DIP |
2516 | 2.89 |
ДобавитьРасследования |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 560mA (Ta) | 10V | 1.5Ohm @ 340mA, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 340 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHG11N80AE-GE3MOSFET N-CH 800V 8A TO247AC |
2640 | 2.89 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 450mOhm @ 5.5A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±30V | 804 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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NVMFS5C612NWFT1GMOSFET N-CH 60V 34A/225A 5DFN |
3655 | 5.48 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 34A (Ta), 225A (Tc) | 10V | 1.65mOhm @ 50A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±20V | 4900 pF @ 25 V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFBC40STRLPBFMOSFET N-CH 600V 6.2A D2PAK |
2355 | 4.66 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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