Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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FDMS8050MOSFET N-CHANNEL 30V 55A 8PQFN |
2968 | 4.11 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 55A (Tc) | 4.5V, 10V | 0.65mOhm @ 55A, 10V | 3V @ 750µA | 285 nC @ 10 V | ±20V | 22610 pF @ 15 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STP45N10F7MOSFET N-CH 100V 45A TO220 |
3804 | 2.08 |
ДобавитьРасследования |
Tube | DeepGATE™, STripFET™ VII | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 45A (Tc) | 10V | 18mOhm @ 22.5A, 10V | 4.5V @ 250µA | 25 nC @ 10 V | ±20V | 1640 pF @ 50 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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PSMN016-100PS,127MOSFET N-CH 100V 57A TO220AB |
2117 | 2.10 |
ДобавитьРасследования |
Bulk,Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 57A (Tj) | 10V | 16mOhm @ 15A, 10V | 4V @ 1mA | 49 nC @ 10 V | ±20V | 2404 pF @ 50 V | - | 148W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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STF13N60DM2MOSFET N-CH 600V 11A TO220FP |
3171 | 2.10 |
ДобавитьРасследования |
Tube | MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 365mOhm @ 5.5A, 10V | 5V @ 250µA | 19 nC @ 10 V | ±25V | 730 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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AOT360A70LMOSFET N-CH 700V 12A TO220 |
3505 | 2.10 |
ДобавитьРасследования |
Tube | aMOS5™ | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 12A (Tc) | 10V | 360mOhm @ 6A, 10V | 4V @ 250µA | 22.5 nC @ 10 V | ±20V | 1360 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPA60R600P6XKSA1MOSFET N-CH 600V 4.9A TO220-FP |
2655 | 2.12 |
ДобавитьРасследования |
Tube | CoolMOS™ P6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.9A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 4.5V @ 200µA | 12 nC @ 10 V | ±20V | 557 pF @ 100 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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RSJ400N10TLMOSFET N-CH 100V 40A LPTS |
2473 | 4.02 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 4V, 10V | 27mOhm @ 40A, 10V | 2.5V @ 1mA | 90 nC @ 10 V | ±20V | 3600 pF @ 25 V | - | 1.35W (Ta), 50W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPB60R180C7ATMA1MOSFET N-CH 650V 13A TO263-3 |
2013 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 13A (Tc) | 10V | 130mOhm @ 5.3A, 10V | 4V @ 260µA | 24 nC @ 10 V | ±20V | 1080 pF @ 400 V | - | 68W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHA6N65E-E3MOSFET N-CHANNEL 650V 7A TO220 |
2080 | 2.13 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 250µA | 48 nC @ 10 V | ±30V | 1640 pF @ 100 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STB8NM60T4MOSFET N-CH 650V 8A D2PAK |
3549 | 3.56 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 8A (Tc) | 10V | 1Ohm @ 2.5A, 10V | 5V @ 250µA | 18 nC @ 10 V | ±30V | 400 pF @ 25 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STF13N65M2MOSFET N-CH 650V 10A TO220FP |
869 | 2.14 |
ДобавитьРасследования |
Tube | MDmesh™ M2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 10A (Tc) | 10V | 430mOhm @ 5A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±25V | 590 pF @ 100 V | - | 25W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRF9510SPBFMOSFET P-CH 100V 4A D2PAK |
3705 | 2.14 |
ДобавитьРасследования |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 4A (Tc) | 10V | 1.2Ohm @ 2.4A, 10V | 4V @ 250µA | 8.7 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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STB24N60DM2MOSFET N-CH 600V 18A D2PAK |
3877 | 3.58 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | FDmesh™ II Plus | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 200mOhm @ 9A, 10V | 5V @ 250µA | 29 nC @ 10 V | ±25V | 1055 pF @ 100 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STLD125N4F6AGMOSFET N-CH 40V 120A POWERFLAT |
2273 | 3.61 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | STripFET™ F6 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 6.5V, 10V | 3mOhm @ 75A, 10V | 4V @ 1mA | 91 nC @ 10 V | ±20V | 5600 pF @ 10 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHB12N60E-GE3MOSFET N-CH 600V 12A D2PAK |
3733 | 2.17 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STP11N65M5MOSFET N-CH 650V 9A TO220 |
3847 | 2.17 |
ДобавитьРасследования |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 9A (Tc) | 10V | 480mOhm @ 4.5A, 10V | 5V @ 250µA | 17 nC @ 10 V | ±25V | 644 pF @ 100 V | - | 85W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHP7N60E-GE3MOSFET N-CH 600V 7A TO220AB |
2037 | 2.19 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 40 nC @ 10 V | ±30V | 680 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP086N10N3GXKSA1MOSFET N-CH 100V 80A TO220-3 |
2643 | 2.20 |
ДобавитьРасследования |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 6V, 10V | 8.6mOhm @ 73A, 10V | 3.5V @ 75µA | 55 nC @ 10 V | ±20V | 3980 pF @ 50 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SQM200N04-1M7L_GE3MOSFET N-CH 40V 200A TO263-7 |
3104 | 3.53 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Tc) | 4.5V, 10V | 1.7mOhm @ 30A, 10V | 2.5V @ 250µA | 291 nC @ 10 V | ±20V | 11168 pF @ 20 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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TK5A60W,S4VXMOSFET N-CH 600V 5.4A TO220SIS |
3589 | 2.21 |
ДобавитьРасследования |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.4A (Ta) | 10V | 900mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5 nC @ 10 V | ±30V | 380 pF @ 300 V | Super Junction | 30W (Tc) | 150°C (TJ) | Through Hole |
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