Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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SQ4840EY-T1_GE3MOSFET N-CH 40V 20.7A 8SO |
3191 | 3.46 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 20.7A (Tc) | 4.5V, 10V | 9mOhm @ 14A, 10V | 2.5V @ 250µA | 62 nC @ 10 V | ±20V | 2440 pF @ 20 V | - | 7.1W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SQ4840EY-T1_BE3MOSFET N-CH 40V 20.7A 8SOIC |
3498 | 3.46 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 20.7A (Tc) | 4.5V, 10V | 9mOhm @ 14A, 10V | 2.5V @ 250µA | 62 nC @ 10 V | ±20V | 2440 pF @ 20 V | - | 7.1W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDB120N10MOSFET N-CH 100V 74A D2PAK |
3915 | 3.14 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 74A (Tc) | 10V | 12mOhm @ 74A, 10V | 4.5V @ 250µA | 86 nC @ 10 V | ±20V | 5605 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPP80R900P7XKSA1MOSFET N-CH 800V 6A TO220-3 |
547 | 1.97 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 900mOhm @ 2.2A, 10V | 3.5V @ 110µA | 15 nC @ 10 V | ±20V | 350 pF @ 500 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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BUK963R3-60E,118MOSFET N-CH 60V 120A D2PAK |
2194 | 3.15 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 5V | 3mOhm @ 25A, 10V | 2.1V @ 1mA | 95 nC @ 5 V | ±10V | 13490 pF @ 25 V | - | 293W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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STB24N60M6MOSFET N-CH 600V D2PAK |
3082 | 3.31 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ M6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | 10V | 190mOhm @ 8.5A, 10V | 4.75V @ 250µA | 23 nC @ 10 V | ±25V | 960 pF @ 100 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFR430APBFMOSFET N-CH 500V 5A DPAK |
3667 | 2.00 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 5A (Tc) | 10V | 1.7Ohm @ 3A, 10V | 4.5V @ 250µA | 24 nC @ 10 V | ±30V | 490 pF @ 25 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SUM70040M-GE3MOSFET N-CH 100V 120A TO263-7 |
3087 | 3.21 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 7.5V, 10V | 3.8mOhm @ 20A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 5100 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPA60R600P7XKSA1MOSFET N-CH 600V 6A TO220 |
3385 | 2.01 |
ДобавитьРасследования |
Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9 nC @ 10 V | ±20V | 363 pF @ 400 V | - | 21W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRLIZ14GPBFMOSFET N-CH 60V 8A TO220-3 |
2433 | 2.01 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 8A (Tc) | 4V, 5V | 200mOhm @ 4.8A, 5V | 2V @ 250µA | 8.4 nC @ 5 V | ±10V | 400 pF @ 25 V | - | 27W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SIHB6N65E-GE3MOSFET N-CH 650V 7A D2PAK |
2903 | 2.01 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 250µA | 48 nC @ 10 V | ±30V | 820 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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AOB160A60LMOSFET N-CH 600V 24A TO263 |
3218 | 3.21 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | aMOS5™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 160mOhm @ 12A, 10V | 3.6V @ 250µA | 46 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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LP0701LG-GMOSFET P-CH 16.5V 700MA 8SOIC |
3379 | 2.70 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 16.5 V | 700mA (Tj) | 2V, 5V | 1.5Ohm @ 300mA, 5V | 1V @ 1.1mA | - | ±10V | 250 pF @ 15 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIDR610DP-T1-GE3MOSFET N-CH 200V 8.9A/39.6A PPAK |
3244 | 3.58 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 8.9A (Ta), 39.6A (Tc) | 7.5V, 10V | 31.9mOhm @ 10A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 1380 pF @ 100 V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFR9024PBFMOSFET P-CH 60V 8.8A DPAK |
1800 | 2.03 |
ДобавитьРасследования |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 8.8A (Tc) | 10V | 280mOhm @ 5.3A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 570 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STP6N62K3MOSFET N-CH 620V 5.5A TO220AB |
3007 | 2.04 |
ДобавитьРасследования |
Tube | SuperMESH3™ | Active | N-Channel | MOSFET (Metal Oxide) | 620 V | 5.5A (Tc) | 10V | 1.2Ohm @ 2.8A, 10V | 4.5V @ 50µA | 34 nC @ 10 V | ±30V | 875 pF @ 50 V | - | 90W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHD9N60E-GE3MOSFET N-CH 600V 9A DPAK |
2082 | 2.04 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 368mOhm @ 4.5A, 10V | 4.5V @ 250µA | 52 nC @ 10 V | ±30V | 778 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF840ASTRRPBFMOSFET N-CH 500V 8A D2PAK |
2678 | 3.26 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±30V | 1018 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STB26N60M2MOSFET N-CHANNEL 600V 20A D2PAK |
3142 | 3.40 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ M2 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 165mOhm @ 10A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±25V | 1360 pF @ 100 V | - | 169W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIE810DF-T1-GE3MOSFET N-CH 20V 60A 10POLARPAK |
3679 | 3.61 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 60A (Tc) | 2.5V, 10V | 1.4mOhm @ 25A, 10V | 2V @ 250µA | 300 nC @ 10 V | ±12V | 13000 pF @ 10 V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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