Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IXTN550N055T2MOSFET N-CH 55V 550A SOT227B |
2647 | 43.48 |
ДобавитьРасследования |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 550A (Tc) | 10V | 1.3mOhm @ 100A, 10V | 4V @ 250µA | 595 nC @ 10 V | ±20V | 40000 pF @ 25 V | - | 940W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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MSC025SMA120SSICFET N-CH 1.2KV 100A D3PAK |
428 | 43.85 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 89A (Tc) | - | - | - | - | - | - | - | - | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFN170N30PMOSFET N-CH 300V 138A SOT-227B |
3877 | 45.94 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 138A (Tc) | 10V | 18mOhm @ 85A, 10V | 4.5V @ 1mA | 258 nC @ 10 V | ±20V | 20000 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFN300N10PMOSFET N-CH 100V 295A SOT227B |
3441 | 45.94 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 295A (Tc) | 10V | 5.5mOhm @ 50A, 10V | 5V @ 8mA | 279 nC @ 10 V | ±20V | 23000 pF @ 25 V | - | 1070W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT10045JLLMOSFET N-CH 1000V 21A ISOTOP |
3575 | 46.09 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | 10V | 450mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154 nC @ 10 V | ±30V | 4350 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXTT1N250HVMOSFET N-CH 2500V 1.5A TO268 |
3553 | 47.40 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 2500 V | 1.5A (Tc) | 10V | 40Ohm @ 750mA, 10V | 4V @ 250µA | 41 nC @ 10 V | ±20V | 1660 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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MSC40SM120JCU3SICFET N-CH 1.2KV 55A SOT227 |
3164 | 47.67 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.7V @ 1mA | 137 nC @ 20 V | +25V, -10V | 1990 pF @ 1000 V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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MSC40SM120JCU2SICFET N-CH 1.2KV 55A SOT227 |
3040 | 47.67 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.7V @ 1mA | 137 nC @ 20 V | +25V, -10V | 1990 pF @ 1000 V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXKK85N60CMOSFET N-CH 600V 85A TO264A |
2541 | 47.69 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 85A (Tc) | 10V | 36mOhm @ 55A, 10V | 4V @ 4mA | 650 nC @ 10 V | ±20V | - | Super Junction | - | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STY145N65M5MOSFET N-CH 650V 138A MAX247 |
3586 | 48.63 |
ДобавитьРасследования |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 138A (Tc) | 10V | 15mOhm @ 69A, 10V | 5V @ 250µA | 414 nC @ 10 V | ±25V | 18500 pF @ 100 V | - | 625W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN38N100PMOSFET N-CH 1000V 38A SOT-227B |
2307 | 49.37 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 38A (Tc) | 10V | 210mOhm @ 19A, 10V | 6.5V @ 1mA | 350 nC @ 10 V | ±30V | 24000 pF @ 25 V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFB40N110PMOSFET N-CH 1100V 40A PLUS264 |
2777 | 50.96 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1100 V | 40A (Tc) | 10V | 260mOhm @ 20A, 10V | 6.5V @ 1mA | 310 nC @ 10 V | ±30V | 19000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTN110N20L2MOSFET N-CH 200V 100A SOT227B |
2965 | 51.24 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | 10V | 24mOhm @ 55A, 10V | 4.5V @ 3mA | 500 nC @ 10 V | ±20V | 23000 pF @ 25 V | - | 735W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFB70N100XMOSFET N-CH 1000V 70A PLUS264 |
2494 | 52.70 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 70A (Tc) | 10V | 89mOhm @ 35A, 10V | 6V @ 8mA | 350 nC @ 10 V | ±30V | 9160 pF @ 25 V | - | 1785W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN52N100XMOSFET N-CH 1000V 44A SOT227B |
3573 | 54.25 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 44A (Tc) | 10V | 125mOhm @ 26A, 10V | 6V @ 4mA | 245 nC @ 10 V | ±30V | 6725 pF @ 25 V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXTN46N50LMOSFET N-CH 500V 46A SOT-227B |
2384 | 55.29 |
ДобавитьРасследования |
Tube | Linear | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 46A (Tc) | 20V | 160mOhm @ 500mA, 20V | 6V @ 250µA | 260 nC @ 15 V | ±30V | 7000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXTN8N150LMOSFET N-CH 1500V 7.5A SOT-227B |
3199 | 55.64 |
ДобавитьРасследования |
Tube | Linear | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 7.5A (Tc) | 20V | 3.6Ohm @ 4A, 20V | 8V @ 250µA | 250 nC @ 15 V | ±30V | 8000 pF @ 25 V | - | 545W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFB150N65X2MOSFET N-CH 650V 150A PLUS264 |
2844 | 34.86 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 150A (Tc) | 10V | 17mOhm @ 75A, 10V | 5.5V @ 8mA | 430 nC @ 10 V | ±30V | 20400 pF @ 25 V | - | 1560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN44N100Q3MOSFET N-CH 1000V 38A SOT227B |
2622 | 58.93 |
ДобавитьРасследования |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 38A (Tc) | 10V | 220mOhm @ 22A, 10V | 6.5V @ 8mA | 264 nC @ 10 V | ±30V | 13600 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFN110N85XMOSFET N-CH 850V 110A SOT227B |
2579 | 63.67 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 110A (Tc) | 10V | 33mOhm @ 55A, 10V | 5.5V @ 8mA | 425 nC @ 10 V | ±30V | 17000 pF @ 25 V | - | 1170W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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