Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
.jpg)
|
IXFX300N20X3MOSFET N-CH 200V 300A PLUS247-3 |
2436 | 33.62 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 300A (Tc) | 10V | 4mOhm @ 150A, 10V | 4.5V @ 8mA | 375 nC @ 10 V | ±20V | 23800 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
IXFX210N30X3MOSFET N-CH 300V 210A PLUS247-3 |
3831 | 33.62 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 210A (Tc) | 10V | 5.5mOhm @ 105A, 10V | 4.5V @ 8mA | 375 nC @ 10 V | ±20V | 24200 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
APT17F120JMOSFET N-CH 1200V 18A ISOTOP |
3849 | 34.07 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 18A (Tc) | 10V | 580mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | ±30V | 9670 pF @ 25 V | - | 545W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
|
APT5010JVRU2MOSFET N-CH 500V 44A SOT227 |
3749 | 34.61 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | 10V | 100mOhm @ 22A, 10V | 4V @ 2.5mA | 312 nC @ 10 V | ±30V | 7410 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
|
IXFK52N100XMOSFET N-CH 1000V 52A TO264 |
3199 | 35.54 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 52A (Tc) | 10V | 125mOhm @ 26A, 10V | 6V @ 4mA | 245 nC @ 10 V | ±30V | 6725 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
.jpg)
|
IXFR80N50Q3MOSFET N-CH 500V 50A ISOPLUS247 |
2749 | 36.24 |
ДобавитьРасследования |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 50A (Tc) | 10V | 72mOhm @ 40A, 10V | 6.5V @ 8mA | 200 nC @ 10 V | ±30V | 10000 pF @ 25 V | - | 570W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
IXFN220N20X3MOSFET N-CH 200V 160A SOT227B |
2145 | 37.16 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 160A (Tc) | 10V | 6.2mOhm @ 110A, 10V | 4.5V @ 4mA | 204 nC @ 10 V | ±20V | 13600 pF @ 25 V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
|
IXFH150N30X3MOSFET N-CH 300V 150A TO247 |
3131 | 21.63 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 150A (Tc) | 10V | 8.3mOhm @ 75A, 10V | 4.5V @ 4mA | 177 nC @ 10 V | ±20V | 13100 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
IXTX60N50L2MOSFET N-CH 500V 60A PLUS247-3 |
1350 | 37.67 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 60A (Tc) | 10V | 100mOhm @ 30A, 10V | 4.5V @ 250µA | 610 nC @ 10 V | ±30V | 24000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
SCTW90N65G2VSICFET N-CH 650V 90A HIP247 |
2481 | 38.02 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 90A (Tc) | 18V | 25mOhm @ 50A, 18V | 5V @ 250µA | 157 nC @ 18 V | +22V, -10V | 3300 pF @ 400 V | - | 390W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
|
Таблицы данных |
|
APT77N60JC3MOSFET N-CH 600V 77A ISOTOP |
3447 | 38.39 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 77A (Tc) | 10V | 35mOhm @ 60A, 10V | 3.9V @ 5.4mA | 640 nC @ 10 V | ±20V | 13600 pF @ 25 V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
|
SCTWA50N120SICFET N-CH 1200V 65A HIP247 |
3971 | 38.53 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 65A (Tc) | 20V | 69mOhm @ 40A, 20V | 3V @ 1mA | 122 nC @ 20 V | +25V, -10V | 1900 pF @ 400 V | - | 318W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
|
Таблицы данных |
|
STY139N65M5MOSFET N-CH 650V 130A MAX247 |
2410 | 38.59 |
ДобавитьРасследования |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 130A (Tc) | 10V | 17mOhm @ 65A, 10V | 5V @ 250µA | 363 nC @ 10 V | ±25V | 15600 pF @ 100 V | - | 625W (Tc) | 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
IXFN230N20TMOSFET N-CH 200V 220A SOT227B |
3798 | 38.72 |
ДобавитьРасследования |
Tube | HiPerFET™, Trench | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 220A (Tc) | 10V | 7.5mOhm @ 60A, 10V | 5V @ 8mA | 378 nC @ 10 V | ±20V | 28000 pF @ 25 V | - | 1090W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
|
Таблицы данных |
|
SCTW100N65G2AGSICFET N-CH 650V 100A HIP247 |
2139 | 39.56 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 100A (Tc) | 18V | 26mOhm @ 50A, 18V | 5V @ 5mA | 162 nC @ 18 V | +22V, -10V | 3315 pF @ 520 V | - | 420W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
|
Таблицы данных |
|
IXFB90N85XMOSFET N-CH 850V 90A PLUS264 |
3463 | 39.73 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 90A (Tc) | 10V | 41mOhm @ 500mA, 10V | 5.5V @ 8mA | 340 nC @ 10 V | ±30V | 13300 pF @ 25 V | - | 1785W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
IXTT240N15X4HVMOSFET N-CH 150V 240A TO268HV |
2897 | 22.75 |
ДобавитьРасследования |
Tube | Ultra X4 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 240A (Tc) | 10V | 4.4mOhm @ 120A, 10V | 4.5V @ 250µA | 195 nC @ 10 V | ±20V | 8900 pF @ 25 V | - | 940W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
NTH4L020N120SC1SICFET N-CH 1200V 102A TO247 |
2095 | 40.56 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 102A (Tc) | 20V | 28mOhm @ 60A, 20V | 4.3V @ 20mA | 220 nC @ 20 V | +25V, -15V | 2943 pF @ 800 V | - | 510W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
Таблицы данных |
|
IXFB62N80Q3MOSFET N-CH 800V 62A PLUS264 |
3787 | 42.56 |
ДобавитьРасследования |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 62A (Tc) | 10V | 140mOhm @ 31A, 10V | 6.5V @ 8mA | 270 nC @ 10 V | ±30V | 13600 pF @ 25 V | - | 1560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
C3M0040120J11200V 40 M SIC MOSFET |
901 | 24.32 |
ДобавитьРасследования |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 64A (Tc) | 15V | 53.5mOhm @ 33.3A, 15V | 3.6V @ 9.2mA | 94 nC @ 15 V | +15V, -4V | 2900 pF @ 1000 V | - | 272W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
Запрос котировок
