Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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APT37M100LMOSFET N-CH 1000V 37A TO264 |
3928 | 22.75 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 37A (Tc) | 10V | 330mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9835 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTK120N25PMOSFET N-CH 250V 120A TO264 |
3430 | 15.69 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 120A (Tc) | 10V | 24mOhm @ 60A, 10V | 5V @ 500µA | 185 nC @ 10 V | ±20V | 8000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IMZ120R045M1XKSA1SICFET N-CH 1200V 52A TO247-4 |
3367 | 23.59 |
ДобавитьРасследования |
Tray | CoolSiC™ | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 52A (Tc) | 15V | 59mOhm @ 20A, 15V | 5.7V @ 10mA | 52 nC @ 15 V | +20V, -10V | 1900 pF @ 800 V | Current Sensing | 228W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTX120N65X2MOSFET N-CH 650V 120A PLUS247-3 |
2545 | 23.63 |
ДобавитьРасследования |
Tube | Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 120A (Tc) | 10V | 24mOhm @ 60A, 10V | 4.5V @ 8mA | 240 nC @ 10 V | ±30V | 13600 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IMW120R045M1XKSA1SICFET N-CH 1.2KV 52A TO247-3 |
2623 | 23.72 |
ДобавитьРасследования |
Tube | CoolSiC™ | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 52A (Tc) | 15V | 59mOhm @ 20A, 15V | 5.7V @ 10mA | 52 nC @ 15 V | +20V, -10V | 1900 pF @ 800 V | - | 228W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTK120N65X2MOSFET N-CH 650V 120A TO264 |
3480 | 23.87 |
ДобавитьРасследования |
Tube | Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 120A (Tc) | 10V | 24mOhm @ 60A, 10V | 4.5V @ 8mA | 240 nC @ 10 V | ±30V | 13600 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFX180N15PMOSFET N-CH 150V 180A PLUS247-3 |
120 | 16.10 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 180A (Tc) | 10V | 11mOhm @ 90A, 10V | 5V @ 4mA | 240 nC @ 10 V | ±20V | 7000 pF @ 25 V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFR80N50PMOSFET N-CH 500V 45A ISOPLUS247 |
3532 | 24.19 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 45A (Tc) | 10V | 72mOhm @ 40A, 10V | 5V @ 8mA | 197 nC @ 10 V | ±30V | 12700 pF @ 25 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FCH041N65EF-F155MOSFET N-CH 650V 76A TO247 |
2255 | 14.70 |
ДобавитьРасследования |
Tube,Tube | FRFET®, SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 76A (Tc) | 10V | 41mOhm @ 38A, 10V | 5V @ 7.6mA | 298 nC @ 10 V | ±20V | 12560 pF @ 100 V | Super Junction | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK120N65X2MOSFET N-CH 650V 120A TO264 |
3220 | 24.34 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 120A (Tc) | 10V | 24mOhm @ 60A, 10V | 5.5V @ 8mA | 225 nC @ 10 V | ±30V | 15500 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFB132N50P3MOSFET N-CH 500V 132A PLUS264 |
3503 | 24.46 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 132A (Tc) | 10V | 39mOhm @ 66A, 10V | 5V @ 8mA | 250 nC @ 10 V | ±30V | 18600 pF @ 25 V | - | 1890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFB110N60P3MOSFET N-CH 600V 110A PLUS264 |
3858 | 24.46 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 110A (Tc) | 10V | 56mOhm @ 55A, 10V | 5V @ 8mA | 245 nC @ 10 V | ±30V | 18000 pF @ 25 V | - | 1890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT28M120B2MOSFET N-CH 1200V 29A T-MAX |
2777 | 24.63 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 29A (Tc) | 10V | 560mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | ±30V | 9670 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFX230N20TMOSFET N-CH 200V 230A PLUS247-3 |
2314 | 25.49 |
ДобавитьРасследования |
Tube | HiPerFET™, Trench | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 230A (Tc) | 10V | 7.5mOhm @ 60A, 10V | 5V @ 8mA | 378 nC @ 10 V | ±20V | 28000 pF @ 25 V | - | 1670W (Tc) | - | Through Hole |
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Таблицы данных |
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IPW60R024P7XKSA1MOSFET N-CH 650V 101A TO247-3-41 |
3236 | 16.98 |
ДобавитьРасследования |
Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 101A (Tc) | 10V | 24mOhm @ 42.4A, 10V | 4V @ 2.03mA | 164 nC @ 10 V | ±20V | 7144 pF @ 400 V | - | 291W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STY105NM50NMOSFET N-CH 500V 110A MAX247 |
3239 | 26.97 |
ДобавитьРасследования |
Tube | MDmesh™ II | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 110A (Tc) | 10V | 22mOhm @ 52A, 10V | 4V @ 250µA | 326 nC @ 10 V | ±25V | 9600 pF @ 100 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFB82N60PMOSFET N-CH 600V 82A PLUS264 |
2486 | 30.84 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 82A (Tc) | 10V | 75mOhm @ 41A, 10V | 5V @ 8mA | 240 nC @ 10 V | ±30V | 23000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN44N80PMOSFET N-CH 800V 39A SOT-227B |
2715 | 32.94 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 39A (Tc) | 10V | 190mOhm @ 500mA, 10V | 5V @ 8mA | 200 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFK32N100Q3MOSFET N-CH 1000V 32A TO264AA |
2116 | 33.18 |
ДобавитьРасследования |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 32A (Tc) | 10V | 320mOhm @ 16A, 10V | 6.5V @ 8mA | 195 nC @ 10 V | ±30V | 9940 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFX240N25X3MOSFET N-CH 250V 240A PLUS247-3 |
690 | 33.62 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 240A (Tc) | 10V | 5mOhm @ 120A, 10V | 4.5V @ 8mA | 345 nC @ 10 V | ±20V | 23800 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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