Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IXFN70N100XMOSFET N-CH 1000V 56A SOT227B |
3027 | 66.09 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 56A (Tc) | 10V | 89mOhm @ 35A, 10V | 6V @ 8mA | 350 nC @ 10 V | ±30V | 9150 pF @ 25 V | - | 1200W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFN120N65X2MOSFET N-CH 650V 108A SOT227B |
3401 | 41.30 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 108A (Tc) | 10V | 24mOhm @ 54A, 10V | 5.5V @ 8mA | 225 nC @ 10 V | ±30V | 15500 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXTN30N100LMOSFET N-CH 1000V 30A SOT227B |
3921 | 69.43 |
ДобавитьРасследования |
Bulk | Linear | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 30A (Tc) | 20V | 450mOhm @ 15A, 20V | 5.5V @ 250µA | 545 nC @ 20 V | ±30V | 13700 pF @ 25 V | - | 800W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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MSC040SMA120JSICFET N-CH 1200V 53A SOT227 |
3500 | 43.51 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 53A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.8V @ 1mA | 137 nC @ 20 V | +25V, -10V | 1990 pF @ 1000 V | - | 208W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFN50N120SKSICFET N-CH 1200V 48A SOT227B |
3403 | 79.42 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 48A (Tc) | 20V | 52mOhm @ 40A, 20V | 2.8V @ 10mA | 115 nC @ 20 V | +20V, -5V | 1895 pF @ 1000 V | - | - | -40°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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BSM300C12P3E301SICFET N-CH 1200V 300A MODULE |
3253 | 1028.57 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 300A (Tc) | - | - | 5.6V @ 80mA | - | +22V, -4V | 1500 pF @ 10 V | Standard | 1360W (Tc) | -40°C ~ 150°C (TJ) | - |
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Таблицы данных |
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NX3008NBKMB,315MOSFET N-CH 30V 530MA DFN1006B-3 |
2054 | 0.36 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 530mA (Ta) | 1.8V, 4.5V | 1.4Ohm @ 350mA, 4.5V | 1.1V @ 250µA | 0.68 nC @ 4.5 V | ±8V | 50 pF @ 15 V | - | 360mW (Ta), 2.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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PMN40ENEXMOSFET N-CH 30V 5.7A 6TSOP |
2513 | 0.40 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 5.7A (Ta) | 4.5V, 10V | 38mOhm @ 4.5A, 10V | 2V @ 250µA | 11 nC @ 10 V | ±20V | 294 pF @ 15 V | - | 530mW (Ta), 4.46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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PMN30UNEXMOSFET N-CH 20V 4.8A 6TSOP |
2404 | 0.49 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 4.8A (Ta) | 1.5V, 4.5V | 36mOhm @ 4.8A, 4.5V | 900mV @ 250µA | 9 nC @ 4.5 V | ±8V | 558 pF @ 10 V | - | 530mW (Ta), 4.46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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CEDM7002AE TR PBFREEMOSFET N-CH 60V 300MA SOT883L |
2481 | 0.40 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 300mA (Ta) | 2.5V, 10V | 1.4Ohm @ 500mA, 10V | 2V @ 250µA | 0.5 nC @ 4.5 V | 20V | 50 pF @ 25 V | - | 100mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SSM6J213FE(TE85L,FMOSFET P CH 20V 2.6A ES6 |
3192 | 0.49 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.6A (Ta) | 1.5V, 4.5V | 103mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7 nC @ 4.5 V | ±8V | 290 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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RQ6E035ATTCRMOSFET P-CH 30V 3.5A TSMT6 |
2517 | 0.41 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.5A (Ta) | 4.5V, 10V | 50mOhm @ 3.5A, 10V | 2.5V @ 1mA | 10 nC @ 10 V | ±20V | 475 pF @ 15 V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI8823EDB-T2-E1MOSFET P-CH 20V 2.7A 4MICRO FOOT |
3008 | 0.43 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen III | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.7A (Tc) | 1.5V, 4.5V | 95mOhm @ 1A, 4.5V | 800mV @ 250µA | 10 nC @ 4.5 V | ±8V | 580 pF @ 10 V | - | 900mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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PMV65XPERMOSFET P-CH 20V 2.8A TO236AB |
3489 | 0.44 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.8A (Ta) | 2.5V, 4.5V | 78mOhm @ 2.8A, 4.5V | 1.25V @ 250µA | 9 nC @ 4.5 V | ±12V | 618 pF @ 10 V | - | 480mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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PMCM4401VPEZMOSFET P-CH 12V 3.9A 4WLCSP |
7627 | 0.48 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 3.9A (Ta) | 1.8V, 4.5V | 65mOhm @ 3A, 4.5V | 900mV @ 250µA | 10 nC @ 4.5 V | ±8V | 415 pF @ 6 V | - | 400mW (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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DMN2075UDW-7MOSFET N-CH 20V 2.8A SOT363 |
2421 | 0.46 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 20 V | 2.8A (Ta) | 1.5V, 4.5V | 48mOhm @ 3A, 4.5V | 1V @ 250µA | 7 nC @ 4.5 V | ±8V | 594.3 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI8821EDB-T2-E1MOSFET P-CH 30V 4MICROFOOT |
3640 | 0.50 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.6A (Ta) | 2.5V, 4.5V | 135mOhm @ 1A, 4.5V | 1.3V @ 250µA | 17 nC @ 10 V | ±12V | 440 pF @ 15 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SSM6K403TU,LFMOSFET N-CH 20V 4.2A UF6 |
2938 | 0.51 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | U-MOSIII | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 4.2A (Ta) | 1.5V, 4V | 28mOhm @ 3A, 4V | 1V @ 1mA | 16.8 nC @ 4 V | ±10V | 1050 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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PMPB100ENEXMOSFET DFN2020MD-6 |
3767 | 0.52 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 5.1A (Ta) | 4.5V, 10V | 72mOhm @ 3.9A, 10V | 2.5V @ 250µA | 5 nC @ 10 V | ±20V | 157 pF @ 15 V | - | 3.3W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SI3473DDV-T1-GE3MOSFET P-CHANNEL 12V 8A 6TSOP |
2024 | 0.53 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen III | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 8A (Tc) | 1.8V, 4.5V | 17.8mOhm @ 8.7A, 4.5V | 1V @ 250µA | 57 nC @ 8 V | ±8V | 1975 pF @ 6 V | - | 3.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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