Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IXFK200N10PMOSFET N-CH 100V 200A TO264AA |
2445 | 16.10 |
ДобавитьРасследования |
Bulk | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 200A (Tc) | 10V | 7.5mOhm @ 100A, 10V | 5V @ 8mA | 235 nC @ 10 V | ±20V | 7600 pF @ 25 V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH16N10D2MOSFET N-CH 100V 16A TO247 |
3913 | 16.57 |
ДобавитьРасследования |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 16A (Tc) | 0V | 64mOhm @ 8A, 0V | - | 225 nC @ 5 V | ±20V | 5700 pF @ 25 V | Depletion Mode | 830W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH12N150MOSFET N-CH 1500V 12A TO247 |
3635 | 16.65 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 12A (Tc) | 10V | 2Ohm @ 6A, 10V | 4.5V @ 250µA | 106 nC @ 10 V | ±30V | 3720 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTT12N150MOSFET N-CH 1500V 12A TO268 |
2839 | 16.71 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 12A (Tc) | 10V | 2Ohm @ 6A, 10V | 4.5V @ 250µA | 106 nC @ 10 V | ±30V | 3720 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFT24N90PMOSFET N-CH 900V 24A TO268 |
3291 | 17.13 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 24A (Tc) | 10V | 420mOhm @ 12A, 10V | 6.5V @ 1mA | 130 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTH10N100D2MOSFET N-CH 1000V 10A TO247 |
3936 | 17.20 |
ДобавитьРасследования |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 10A (Tc) | 10V | 1.5Ohm @ 5A, 10V | - | 200 nC @ 5 V | ±20V | 5320 pF @ 25 V | Depletion Mode | 695W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH15N100Q3MOSFET N-CH 1000V 15A TO247AD |
3811 | 17.23 |
ДобавитьРасследования |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 15A (Tc) | 10V | 1.05Ohm @ 7.5A, 10V | 6.5V @ 4mA | 64 nC @ 10 V | ±30V | 3250 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW26NM50MOSFET N-CH 500V 30A TO247-3 |
3243 | 11.77 |
ДобавитьРасследования |
Tube | MDmesh™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | 10V | 120mOhm @ 13A, 10V | 5V @ 250µA | 106 nC @ 10 V | ±30V | 3000 pF @ 25 V | - | 313W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK64N50PMOSFET N-CH 500V 64A TO264AA |
3513 | 17.39 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 64A (Tc) | 10V | 85mOhm @ 32A, 10V | 5.5V @ 8mA | 150 nC @ 10 V | ±30V | 8700 pF @ 25 V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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VN2210N2MOSFET N-CH 100V 1.7A TO39 |
2784 | 17.58 |
ДобавитьРасследования |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.7A (Tj) | 5V, 10V | 350mOhm @ 4A, 10V | 2.4V @ 10mA | - | ±20V | 500 pF @ 25 V | - | 360mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT5010LLLGMOSFET N-CH 500V 46A TO264 |
2192 | 17.67 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 46A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 95 nC @ 10 V | ±30V | 4360 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFT180N20X3HVMOSFET N-CH 200V 180A TO268HV |
2605 | 18.10 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 180A (Tc) | 10V | 7.5mOhm @ 90A, 10V | 4.5V @ 4mA | 154 nC @ 10 V | ±20V | 10300 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFT120N30X3HVMOSFET N-CH 300V 120A TO268HV |
2451 | 18.10 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 120A (Tc) | 10V | 11mOhm @ 60A, 10V | 4.5V @ 4mA | 170 nC @ 10 V | ±20V | 1376 pF @ 25 V | - | 735W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTQ170N10PMOSFET N-CH 100V 170A TO3P |
2441 | 12.20 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 170A (Tc) | 10V | 9mOhm @ 500mA, 10V | 5V @ 250µA | 198 nC @ 10 V | ±20V | 6000 pF @ 25 V | - | 715W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK98N50P3MOSFET N-CH 500V 98A TO264AA |
3134 | 18.19 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 98A (Tc) | 10V | 50mOhm @ 500mA, 10V | 5V @ 8mA | 197 nC @ 10 V | ±30V | 13100 pF @ 25 V | - | 1300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW88N65M5MOSFET N-CH 650V 84A TO247-3 |
2851 | 18.90 |
ДобавитьРасследования |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 84A (Tc) | 10V | 29mOhm @ 42A, 10V | 5V @ 250µA | 204 nC @ 10 V | ±25V | 8825 pF @ 100 V | - | 450W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFX100N65X2MOSFET N-CH 650V 100A PLUS247-3 |
2932 | 18.96 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 100A (Tc) | 10V | 30mOhm @ 50A, 10V | 5.5V @ 4mA | 180 nC @ 10 V | ±30V | 11300 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK100N65X2MOSFET N-CH 650V 100A TO264 |
2106 | 19.29 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 100A (Tc) | 10V | 30mOhm @ 50A, 10V | 5.5V @ 4mA | 180 nC @ 10 V | ±30V | 11300 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFX180N25TMOSFET N-CH 250V 180A PLUS247-3 |
456 | 19.54 |
ДобавитьРасследования |
Tube | HiPerFET™, Trench | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 180A (Tc) | 10V | 12.9mOhm @ 60A, 10V | 5V @ 8mA | 345 nC @ 10 V | ±20V | 28000 pF @ 25 V | - | 1390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SCTWA35N65G2VTRANS SJT N-CH 650V 45A TO247 |
3733 | 19.57 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 45A (Tc) | 18V, 20V | 72mOhm @ 20A, 20V | 3.2V @ 1mA | 73 nC @ 20 V | +20V, -5V | 73000 pF @ 400 V | - | 208W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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