Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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DMN3051LDM-7MOSFET N-CH 30V 4A SOT26 |
2818 | 0.46 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 4.5V, 10V | 38mOhm @ 6A, 10V | 2.2V @ 250µA | 8.6 nC @ 10 V | ±20V | 424 pF @ 5 V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SSM6J212FE,LFMOSFET P-CH 20V 4A ES6 |
2020 | 0.48 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.5V, 4.5V | 40.7mOhm @ 3A, 4.5V | 1V @ 1mA | 14.1 nC @ 4.5 V | ±8V | 970 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI8806DB-T2-E1MOSFET N-CH 12V 4MICROFOOT |
3642 | 0.48 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 12 V | 2.8A (Ta) | 1.8V, 4.5V | 43mOhm @ 1A, 4.5V | 1V @ 250µA | 17 nC @ 8 V | ±8V | - | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI8489EDB-T2-E1MOSFET P-CH 20V 4MICROFOOT |
2153 | 0.49 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.06A (Ta) | 2.5V, 10V | 44mOhm @ 1.5A, 10V | 1.2V @ 250µA | 27 nC @ 10 V | ±12V | 765 pF @ 10 V | - | 780mW (Ta), 1.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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RF4E080GNTRMOSFET N-CH 30V 8A HUML2020L8 |
2850 | 0.50 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 8A (Ta) | 4.5V, 10V | 17.6mOhm @ 8A, 10V | 2.5V @ 250µA | 5.8 nC @ 10 V | ±20V | 295 pF @ 15 V | - | 2W (Ta) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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DMT3006LDK-7MOSFET N-CH 30V 17.1A/46.2A 8DFN |
3838 | 0.51 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 17.1A (Ta), 46.2A (Tc) | 4.5V, 10V | 6.5mOhm @ 12A, 10V | 3V @ 250µA | 22.6 nC @ 10 V | ±20V | 1320 pF @ 15 V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIRA88DP-T1-GE3MOSFET N-CH 30V 45.5A PPAK SO-8 |
2732 | 0.51 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 45.5A (Tc) | 4.5V, 10V | 6.7mOhm @ 10A, 10V | 2.4V @ 250µA | 12.5 nC @ 4.5 V | +20V, -16V | 985 pF @ 15 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIRA84BDP-T1-GE3MOSFET N-CH 30V 22A/70A PPAK SO8 |
2145 | 0.52 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta), 70A (Tc) | 4.5V, 10V | 4.6mOhm @ 15A, 10V | 2.4V @ 250µA | 32 nC @ 10 V | +20V, -16V | 1050 pF @ 15 V | - | 3.7W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIB422EDK-T1-GE3MOSFET N-CH 20V 9A PPAK SC75-6 |
2531 | 0.53 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 9A (Tc) | 1.5V, 4.5V | 30mOhm @ 5A, 4.5V | 1V @ 250µA | 18 nC @ 8 V | ±8V | - | - | 2.5W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIA477EDJ-T1-GE3MOSFET P-CH 12V 12A PPAK SC70-6 |
2220 | 0.53 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 12A (Tc) | - | 14mOhm @ 7A, 4.5V | 1V @ 250µA | 87 nC @ 8 V | - | 2970 pF @ 6 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount |
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SI3407DV-T1-BE3MOSFET P-CH 20V 7.5A/8A 6TSOP |
3505 | 0.53 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 7.5A (Ta), 8A (Tc) | 2.5V, 4.5V | 24mOhm @ 7.5A, 4.5V | 1.5V @ 250µA | 63 nC @ 10 V | ±12V | 1670 pF @ 10 V | - | 2W (Ta), 4.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI2336DS-T1-BE3MOSFET N-CH 30V 4.3A/5.2A SOT23 |
2865 | 0.53 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 4.3A (Ta), 5.2A (Tc) | 1.8V, 4.5V | 42mOhm @ 3.8A, 4.5V | 1V @ 250µA | 15 nC @ 8 V | ±8V | 560 pF @ 15 V | - | 1.25W (Ta), 1.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIRA14BDP-T1-GE3MOSFET N-CH 30V 21A/64A PPAK SO8 |
3809 | 0.54 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta), 64A (Tc) | 4.5V, 10V | 5.38mOhm @ 10A, 10V | 2.2V @ 250µA | 22 nC @ 10 V | +20V, -16V | 917 pF @ 15 V | - | 3.7W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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RQ3E150BNTBMOSFET N-CH 30V 15A 8HSMT |
2453 | 0.69 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta) | 4.5V, 10V | 5.3mOhm @ 15A, 10V | 2.5V @ 1mA | 45 nC @ 10 V | ±20V | 3000 pF @ 15 V | - | 2W (Ta) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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ZXMN6A07FQTAMOSFET N-CH 60V 1.2A SOT23 |
2835 | 0.56 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 1.2A (Ta) | 4.5V, 10V | 250mOhm @ 1.8A, 10V | 3V @ 250µA | 3.2 nC @ 10 V | ±20V | 166 pF @ 40 V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIA811ADJ-T1-GE3MOSFET P-CH 20V 4.5A PPAK SC70-6 |
2818 | 0.58 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | LITTLE FOOT® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.5A (Tc) | 1.8V, 4.5V | 116mOhm @ 2.8A, 4.5V | 1V @ 250µA | 13 nC @ 8 V | ±8V | 345 pF @ 10 V | Schottky Diode (Isolated) | 1.8W (Ta), 6.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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DMN62D0UT-7MOSFET N-CH 60V 0.32A SOT523 |
3586 | 0.42 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 320mA (Ta) | 1.8V, 2.5V, 4.5V | 2Ohm @ 50mA, 4.5V | 1V @ 250A | 0.5 nC @ 4.5 V | ±20V | 32 pF @ 30 V | - | 230mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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PMZB550UNEYLMOSFET N-CH 30V 590MA DFN1006B-3 |
3473 | 0.50 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 590mA (Ta) | 1.5V, 4.5V | 670mOhm @ 590mA, 4.5V | 950mV @ 250µA | 1.1 nC @ 4.5 V | ±8V | 30.3 pF @ 15 V | - | 310mW (Ta), 1.67W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NTLJF4156NTAGMOSFET N-CH 30V 2.5A 6WDFN |
2609 | 0.60 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 2.5A (Tj) | 1.5V, 4.5V | 70mOhm @ 2A, 4.5V | 1V @ 250µA | 6.5 nC @ 4.5 V | ±8V | 427 pF @ 15 V | Schottky Diode (Isolated) | 710mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFH3707TRPBFMOSFET N-CH 30V 12A/29A 8PQFN |
2625 | 0.60 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta), 29A (Tc) | 4.5V, 10V | 12.4mOhm @ 12A, 10V | 2.35V @ 25µA | 8.1 nC @ 4.5 V | ±20V | 755 pF @ 15 V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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