Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IXTH64N10L2MOSFET N-CH 100V 64A TO247 |
2813 | 9.03 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 64A (Tc) | 10V | 32mOhm @ 32A, 10V | 4.5V @ 250µA | 100 nC @ 10 V | ±20V | 3620 pF @ 25 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH16N80PMOSFET N-CH 800V 16A TO247AD |
3036 | 9.11 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 16A (Tc) | 10V | 600mOhm @ 500mA, 10V | 5V @ 4mA | 71 nC @ 10 V | ±30V | 4600 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHG47N60AEF-GE3MOSFET N-CH 600V 40A TO247AC |
2740 | 9.16 |
ДобавитьРасследования |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 70mOhm @ 23.5A, 10V | 4V @ 250µA | 189 nC @ 10 V | ±30V | 3576 pF @ 100 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH26N60PMOSFET N-CH 600V 26A TO247AD |
2591 | 9.18 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 26A (Tc) | 10V | 270mOhm @ 500mA, 10V | 5V @ 4mA | 72 nC @ 10 V | ±30V | 4150 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH130N20TMOSFET N-CH 200V 130A TO247 |
2738 | 9.18 |
ДобавитьРасследования |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 130A (Tc) | 10V | 16mOhm @ 500mA, 10V | 5V @ 1mA | 150 nC @ 10 V | ±20V | 8800 pF @ 25 V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTQ82N25PMOSFET N-CH 250V 82A TO3P |
3914 | 9.22 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 82A (Tc) | 10V | 35mOhm @ 41A, 10V | 5V @ 250µA | 142 nC @ 10 V | ±20V | 4800 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTQ96N20PMOSFET N-CH 200V 96A TO3P |
3357 | 9.22 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 96A (Tc) | 10V | 24mOhm @ 500mA, 10V | 5V @ 250µA | 145 nC @ 10 V | ±20V | 4800 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH1N200P3HVMOSFET N-CH 2000V 1A TO247HV |
3045 | 9.22 |
ДобавитьРасследования |
Tube | Polar P3™ | Active | N-Channel | MOSFET (Metal Oxide) | 2000 V | 1A (Tc) | 10V | 40Ohm @ 500mA, 10V | 4V @ 250µA | 23.5 nC @ 10 V | ±20V | 646 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH90N20X3MOSFET N-CH 200V 90A TO247 |
3154 | 9.33 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 90A (Tc) | 10V | 12.8mOhm @ 45A, 10V | 4.5V @ 1.5mA | 78 nC @ 10 V | ±20V | 5420 pF @ 25 V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFP80N25X3MOSFET N-CH 250V 80A TO220AB |
2633 | 9.40 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 80A (Tc) | 10V | 16mOhm @ 40A, 10V | 4.5V @ 1.5mA | 83 nC @ 10 V | ±20V | 5430 pF @ 25 V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFP4568PBFMOSFET N-CH 150V 171A TO247AC |
3702 | 9.47 |
ДобавитьРасследования |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 171A (Tc) | 10V | 5.9mOhm @ 103A, 10V | 5V @ 250µA | 227 nC @ 10 V | ±30V | 10470 pF @ 50 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFA3N120MOSFET N-CH 1200V 3A TO263 |
2614 | 9.73 |
ДобавитьРасследования |
Tube | HiPerFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 3A (Tc) | 10V | 4.5Ohm @ 1.5A, 10V | 5V @ 1.5mA | 39 nC @ 10 V | ±20V | 1050 pF @ 25 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTP100N15X4MOSFET N-CH 150V 100A TO220 |
3397 | 9.96 |
ДобавитьРасследования |
Tube | Ultra X4 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 100A (Tc) | 10V | 11.5mOhm @ 50A, 10V | 4.5V @ 250µA | 74 nC @ 10 V | ±20V | 3970 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPW60R070P6XKSA1MOSFET N-CH 600V 53.5A TO247-3 |
3962 | 9.96 |
ДобавитьРасследования |
Tube | CoolMOS™ P6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 53.5A (Tc) | 10V | 70mOhm @ 20.6A, 10V | 4.5V @ 1.72mA | 100 nC @ 10 V | ±20V | 4750 pF @ 100 V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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TK31N60W5,S1VFMOSFET N-CH 600V 30.8A TO247 |
3969 | 6.74 |
ДобавитьРасследования |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 99mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPT60R055CFD7XTMA1MOSFET N-CH 600V 44A 8HSOF |
3960 | 11.01 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 44A (Tc) | 10V | 55mOhm @ 15.1A, 10V | 4.5V @ 760µA | 67 nC @ 10 V | ±20V | 2721 pF @ 400 V | - | 236W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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C3M0160120DSICFET N-CH 1200V 17A TO247-3 |
3892 | 10.00 |
ДобавитьРасследования |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 15V | 208mOhm @ 8.5A, 15V | 3.6V @ 2.33mA | 38 nC @ 15 V | +15V, -4V | 632 pF @ 1000 V | - | 97W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT22F80BMOSFET N-CH 800V 23A TO247 |
3581 | 10.00 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 23A (Tc) | 10V | 500mOhm @ 12A, 10V | 5V @ 1mA | 150 nC @ 10 V | ±30V | 4595 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFA90N20X3MOSFET N-CH 200V 90A TO263AA |
2227 | 10.02 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 90A (Tc) | 10V | 12.8mOhm @ 45A, 10V | 4.5V @ 1.5mA | 78 nC @ 10 V | ±20V | 5420 pF @ 25 V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFA72N30X3MOSFET N-CH 300V 72A TO263AA |
3473 | 10.02 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 72A (Tc) | 10V | 19mOhm @ 36A, 10V | 4.5V @ 1.5mA | 82 nC @ 10 V | ±20V | 5400 pF @ 25 V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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