Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK35A65W,S5X

Таблицы данных

TK35A65W,S5X

TK35A65W,S5X

MOSFET N-CH 650V 35A TO220SIS

Toshiba Semiconductor and Storage

2395 6.81
- +

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Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Ta) 10V 80mOhm @ 17.5A, 10V 3.5V @ 2.1mA 100 nC @ 10 V ±30V 4100 pF @ 300 V - 50W (Tc) 150°C (TJ) Through Hole
NTHL095N65S3HF

Таблицы данных

NTHL095N65S3HF

NTHL095N65S3HF

MOSFET N-CH 650V 36A TO247-3

onsemi

3260 10.12
- +

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Tube FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 36A (Tc) 10V 95mOhm @ 18A, 10V 5V @ 860µA 66 nC @ 10 V ±30V 2930 pF @ 400 V - 272W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK39N60X,S1F

Таблицы данных

TK39N60X,S1F

TK39N60X,S1F

MOSFET N-CH 600V 38.8A TO247

Toshiba Semiconductor and Storage

3291 6.87
- +

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Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 65mOhm @ 12.5A, 10V 3.5V @ 1.9mA 85 nC @ 10 V ±30V 4100 pF @ 300 V Super Junction 270W (Tc) 150°C (TJ) Through Hole
IXFQ60N50P3

Таблицы данных

IXFQ60N50P3

IXFQ60N50P3

MOSFET N-CH 500V 60A TO3P

IXYS

2579 10.20
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Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 60A (Tc) 10V 100mOhm @ 30A, 10V 5V @ 4mA 96 nC @ 10 V ±30V 6250 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK39J60W,S1VQ

Таблицы данных

TK39J60W,S1VQ

TK39J60W,S1VQ

MOSFET N-CH 600V 38.8A TO3P

Toshiba Semiconductor and Storage

3877 10.21
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Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 65mOhm @ 19.4A, 10V 3.7V @ 1.9mA 110 nC @ 10 V ±30V 4100 pF @ 300 V Super Junction 270W (Tc) 150°C (TJ) Through Hole
IXTH20N65X

Таблицы данных

IXTH20N65X

IXTH20N65X

MOSFET N-CH 650V 20A TO247

IXYS

3270 10.27
- +

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Tube Ultra X Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 210mOhm @ 10A, 10V 5.5V @ 250µA 35 nC @ 10 V ±30V 1390 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG050N60E-GE3

Таблицы данных

SIHG050N60E-GE3

SIHG050N60E-GE3

MOSFET N-CH 600V 51A TO247AC

Vishay Siliconix

2478 10.29
- +

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Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 51A (Tc) 10V 50mOhm @ 23A, 10V 5V @ 250µA 130 nC @ 10 V ±30V 3459 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
STWA48N60DM2

Таблицы данных

STWA48N60DM2

STWA48N60DM2

MOSFET N-CH 600V 40A TO247

STMicroelectronics

3568 10.31
- +

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Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 79mOhm @ 20A, 10V 5V @ 250µA 70 nC @ 10 V ±25V 3250 pF @ 100 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH48N65X2

Таблицы данных

IXTH48N65X2

IXTH48N65X2

MOSFET N-CH 650V 48A TO247

IXYS

2581 10.35
- +

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Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 48A (Tc) 10V 68mOhm @ 24A, 10V 4.5V @ 4mA 77 nC @ 10 V ±30V 4420 pF @ 25 V - 660W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT17F100B

Таблицы данных

APT17F100B

APT17F100B

MOSFET N-CH 1000V 17A TO247

Microchip Technology

3685 10.36
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 17A (Tc) 10V 800mOhm @ 9A, 10V 5V @ 1mA 150 nC @ 10 V ±30V 4845 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT14M120B

Таблицы данных

APT14M120B

APT14M120B

MOSFET N-CH 1200V 14A TO247

Microchip Technology

3472 10.37
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 1200 V 14A (Tc) 10V 1.2Ohm @ 7A, 10V 5V @ 1mA 145 nC @ 10 V ±30V 4765 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R125CFD7XKSA1

Таблицы данных

IPW60R125CFD7XKSA1

IPW60R125CFD7XKSA1

MOSFET N-CH 600V 18A TO247-3

Infineon Technologies

3614 7.02
- +

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Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 125mOhm @ 7.8A, 10V 4.5V @ 390µA 36 nC @ 10 V ±20V 1503 pF @ 400 V - 92W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP34NM60N

Таблицы данных

STP34NM60N

STP34NM60N

MOSFET N-CH 600V 29A TO220-3

STMicroelectronics

3657 10.51
- +

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Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 105mOhm @ 14.5A, 10V 4V @ 250µA 80 nC @ 10 V ±25V 2722 pF @ 100 V - 250W (Tc) 150°C (TJ) Through Hole
MSC060SMA070B4

Таблицы данных

MSC060SMA070B4

MSC060SMA070B4

TRANS SJT N-CH 700V 39A TO247-4

Microchip Technology

3442 10.59
- +

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Tube - Active N-Channel SiCFET (Silicon Carbide) 700 V 39A (Tc) 20V 75mOhm @ 20A, 20V 2.4V @ 1mA 56 nC @ 20 V +23V, -10V 1175 pF @ 700 V - 143W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH36N50P

Таблицы данных

IXFH36N50P

IXFH36N50P

MOSFET N-CH 500V 36A TO247AD

IXYS

3537 10.67
- +

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Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 36A (Tc) 10V 170mOhm @ 500mA, 10V 5V @ 4mA 93 nC @ 10 V ±30V 5500 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK62N60X,S1F

Таблицы данных

TK62N60X,S1F

TK62N60X,S1F

MOSFET N-CH 600V 61.8A TO247

Toshiba Semiconductor and Storage

2239 10.72
- +

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Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 40mOhm @ 21A, 10V 3.5V @ 3.1mA 135 nC @ 10 V ±30V 6500 pF @ 300 V Super Junction 400W (Tc) 150°C (TJ) Through Hole
IXFQ72N30X3

Таблицы данных

IXFQ72N30X3

IXFQ72N30X3

MOSFET N-CH 300V 72A TO3P

IXYS

2868 10.75
- +

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Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 72A (Tc) 10V 19mOhm @ 36A, 10V 4.5V @ 1.5mA 82 nC @ 10 V ±20V 5400 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT82N25P

Таблицы данных

IXTT82N25P

IXTT82N25P

MOSFET N-CH 250V 82A TO268

IXYS

3874 10.78
- +

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Tube Polar Active N-Channel MOSFET (Metal Oxide) 250 V 82A (Tc) 10V 35mOhm @ 41A, 10V 5V @ 250µA 142 nC @ 10 V ±20V 4800 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT120N15P

Таблицы данных

IXTT120N15P

IXTT120N15P

MOSFET N-CH 150V 120A TO268

IXYS

3622 10.78
- +

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Tube Polar Active N-Channel MOSFET (Metal Oxide) 150 V 120A (Tc) 10V 16mOhm @ 500mA, 10V 5V @ 250µA 150 nC @ 10 V ±20V 4900 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCH47N60F-F133

Таблицы данных

FCH47N60F-F133

FCH47N60F-F133

MOSFET N-CH 600V 47A TO247-3

onsemi

3507 10.82
- +

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Tube SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 70mOhm @ 23.5A, 10V 5V @ 250µA 270 nC @ 10 V ±30V 8000 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
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