Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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APT7F120SMOSFET N-CH 1200V 7A D3PAK |
2344 | 7.02 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 7A (Tc) | 10V | 2.4Ohm @ 3A, 10V | 5V @ 1mA | 80 nC @ 10 V | ±30V | 2565 pF @ 25 V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHG052N60EF-GE3MOSFET N-CH 600V 48A TO247AC |
3103 | 7.06 |
ДобавитьРасследования |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 48A (Tc) | 10V | 52mOhm @ 23A, 10V | 5V @ 250µA | 101 nC @ 10 V | ±30V | 3380 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP020N08N5AKSA1MOSFET N-CH 80V 120A TO220-3 |
2483 | 7.13 |
ДобавитьРасследования |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.8V @ 280µA | 223 nC @ 10 V | ±20V | 16900 pF @ 40 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH22N65X2MOSFET N-CH 650V 22A TO247 |
3108 | 7.14 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Tc) | 10V | 160mOhm @ 11A, 10V | 5.5V @ 1.5mA | 38 nC @ 10 V | ±30V | 2310 pF @ 25 V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHB065N60E-GE3MOSFET N-CH 600V 40A D2PAK |
2092 | 7.17 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 65mOhm @ 16A, 10V | 5V @ 250µA | 74 nC @ 10 V | ±30V | 2700 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SPA20N60C3XKSA1MOSFET N-CH 600V 20.7A TO220-31 |
3136 | 7.20 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 34.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPW60R080P7XKSA1MOSFET N-CH 600V 37A TO247-3 |
3402 | 7.25 |
ДобавитьРасследования |
Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 37A (Tc) | 10V | 80mOhm @ 11.8A, 10V | 4V @ 590µA | 51 nC @ 10 V | ±20V | 2180 pF @ 400 V | - | 129W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW43N60DM2MOSFET N-CH 600V 34A TO247 |
3601 | 7.27 |
ДобавитьРасследования |
Tube | MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 34A (Tc) | 10V | 93mOhm @ 17A, 10V | 5V @ 250µA | 56 nC @ 10 V | ±25V | 2500 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPA60R125C6XKSA1MOSFET N-CH 600V 30A TO220-FP |
3799 | 7.30 |
ДобавитьРасследования |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 960µA | 96 nC @ 10 V | ±20V | 2127 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP60R125C6XKSA1MOSFET N-CH 600V 30A TO220-3 |
2195 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 960µA | 96 nC @ 10 V | ±20V | 2127 pF @ 100 V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTQ200N10TMOSFET N-CH 100V 200A TO3P |
3575 | 7.32 |
ДобавитьРасследования |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 200A (Tc) | 10V | 5.5mOhm @ 50A, 10V | 4.5V @ 250µA | 152 nC @ 10 V | ±30V | 9400 pF @ 25 V | - | 550W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FQA140N10MOSFET N-CH 100V 140A TO3PN |
3290 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 140A (Tc) | 10V | 10mOhm @ 70A, 10V | 4V @ 250µA | 285 nC @ 10 V | ±25V | 7900 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFP17N50LPBFMOSFET N-CH 500V 16A TO247-3 |
3726 | 7.39 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 10V | 320mOhm @ 9.9A, 10V | 5V @ 250µA | 130 nC @ 10 V | ±30V | 2760 pF @ 25 V | - | 220W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTQ36P15PMOSFET P-CH 150V 36A TO3P |
3760 | 7.40 |
ДобавитьРасследования |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 36A (Tc) | 10V | 110mOhm @ 18A, 10V | 4.5V @ 250µA | 55 nC @ 10 V | ±20V | 3100 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPW60R099P6XKSA1MOSFET N-CH 600V 37.9A TO247-3 |
2760 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ P6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 37.9A (Tc) | 10V | 99mOhm @ 14.5A, 10V | 4.5V @ 1.21mA | 70 nC @ 10 V | ±20V | 3330 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFPC60PBFMOSFET N-CH 600V 16A TO247-3 |
2621 | 7.47 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 400mOhm @ 9.6A, 10V | 4V @ 250µA | 210 nC @ 10 V | ±20V | 3900 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFP90N20X3MOSFET N-CH 200V 90A TO220 |
2825 | 7.50 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 90A (Tc) | 10V | 12.8mOhm @ 45A, 10V | 4.5V @ 1.5mA | 78 nC @ 10 V | ±20V | 5420 pF @ 25 V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STH13N120K5-2AGMOSFET N-CH 1200V 12A H2PAK-2 |
2263 | 11.23 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 690mOhm @ 6A, 10V | 5V @ 100µA | 44.2 nC @ 10 V | ±30V | 1370 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHP065N60E-GE3MOSFET N-CH 600V 40A TO220AB |
2840 | 7.61 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 65mOhm @ 16A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±30V | 2700 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH110N10PMOSFET N-CH 100V 110A TO247AD |
3411 | 7.65 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 110A (Tc) | 10V | 15mOhm @ 500mA, 10V | 5V @ 4mA | 110 nC @ 10 V | ±20V | 3550 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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