Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IRF200P223MOSFET N-CH 200V 100A TO247AC |
3624 | 7.92 |
ДобавитьРасследования |
Tube | StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | 10V | 11.5mOhm @ 60A, 10V | 4V @ 270µA | 102 nC @ 10 V | ±20V | 5094 pF @ 50 V | - | 313W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRF250P224MOSFET N-CH 250V 96A TO247AC |
2784 | 11.79 |
ДобавитьРасследования |
Tube | StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 96A (Tc) | 10V | 12mOhm @ 58A, 10V | 4V @ 270µA | 203 nC @ 10 V | ±20V | 9915 pF @ 50 V | - | 313W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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TK040Z65Z,S1FMOSFET N-CH 650V 57A TO247-4L |
3741 | 11.83 |
ДобавитьРасследования |
Tube | DTMOSVI | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 57A (Ta) | 10V | 40mOhm @ 28.5A, 10V | 4V @ 2.85mA | 105 nC @ 10 V | ±30V | 6250 pF @ 300 V | - | 360W (Tc) | 150°C | Through Hole |
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Таблицы данных |
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IXTH150N15X4MOSFET N-CH 150V 150A TO247 |
3045 | 11.89 |
ДобавитьРасследования |
Tube | Ultra X4 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 150A (Tc) | 10V | 7.2mOhm @ 75A, 10V | 4.5V @ 250µA | 105 nC @ 10 V | ±20V | 5500 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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APT56M50LMOSFET N-CH 500V 56A TO264 |
2876 | 12.02 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 56A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220 nC @ 10 V | ±30V | 8800 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFT50N60P3MOSFET N-CH 600V 50A TO268 |
300 | 12.02 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 10V | 145mOhm @ 500mA, 10V | 5V @ 4mA | 94 nC @ 10 V | ±30V | 6300 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTT170N10PMOSFET N-CH 100V 170A TO268 |
3243 | 12.05 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 170A (Tc) | 10V | 9mOhm @ 500mA, 10V | 5V @ 250µA | 198 nC @ 10 V | ±20V | 6000 pF @ 25 V | - | 715W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFH72N30X3MOSFET N-CH 300V 72A TO247 |
3590 | 12.13 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 72A (Tc) | 10V | 19mOhm @ 36A, 10V | 4.5V @ 1.5mA | 82 nC @ 10 V | ±20V | 5400 pF @ 25 V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFQ140N20X3MOSFET N-CH 200V 140A TO3P |
2827 | 12.21 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 140A (Tc) | 10V | 9.6mOhm @ 70A, 10V | 4.5V @ 4mA | 127 nC @ 10 V | ±20V | 7660 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFQ120N25X3MOSFET N-CHANNEL 250V 120A TO3P |
2218 | 12.21 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 120A (Tc) | 10V | 12mOhm @ 60A, 10V | 4.5V @ 4mA | 122 nC @ 10 V | ±20V | 7870 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH62N65X2MOSFET N-CH 650V 62A TO247 |
2320 | 12.24 |
ДобавитьРасследования |
Tube | Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 62A (Tc) | 10V | 52mOhm @ 31A, 10V | 4.5V @ 4mA | 104 nC @ 10 V | ±30V | 5940 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH88N30PMOSFET N-CH 300V 88A TO247 |
2947 | 12.25 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 88A (Tc) | 10V | 40mOhm @ 44A, 10V | 5V @ 250µA | 180 nC @ 10 V | ±20V | 6300 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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NVH4L080N120SC1SICFET N-CH 1200V 29A TO247-4 |
3775 | 12.30 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 29A (Tc) | 20V | 110mOhm @ 20A, 20V | 4.3V @ 5mA | 56 nC @ 20 V | +25V, -15V | 1670 pF @ 800 V | - | 170mW (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH120N20PMOSFET N-CH 200V 120A TO247AD |
2035 | 12.31 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 120A (Tc) | 10V | 22mOhm @ 500mA, 10V | 5V @ 4mA | 152 nC @ 10 V | ±20V | 6000 pF @ 25 V | - | 714W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH170N10PMOSFET N-CH 100V 170A TO247AD |
2851 | 12.31 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 170A (Tc) | 10V | 9mOhm @ 500mA, 10V | 5V @ 4mA | 198 nC @ 10 V | ±20V | 6000 pF @ 25 V | - | 715W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SCT10N120SICFET N-CH 1200V 12A HIP247 |
2148 | 12.35 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 12A (Tc) | 20V | 690mOhm @ 6A, 20V | 3.5V @ 250µA | 22 nC @ 20 V | +25V, -10V | 290 pF @ 400 V | - | 150W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK44N50PMOSFET N-CH 500V 44A TO264AA |
2186 | 12.50 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | 10V | 140mOhm @ 22A, 10V | 5V @ 4mA | 98 nC @ 10 V | ±30V | 5440 pF @ 25 V | - | 658W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH60N65X2MOSFET N-CH 650V 60A TO247 |
2488 | 12.60 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 60A (Tc) | 10V | 52mOhm @ 30A, 10V | 5.5V @ 4mA | 107 nC @ 10 V | ±30V | 6180 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH69N30PMOSFET N-CH 300V 69A TO247AD |
3883 | 12.68 |
ДобавитьРасследования |
Box | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 69A (Tc) | 10V | 49mOhm @ 500mA, 10V | 5V @ 4mA | 180 nC @ 10 V | ±20V | 4960 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW56N60DM2MOSFET N-CH 600V 50A TO247 |
3950 | 12.68 |
ДобавитьРасследования |
Tube | MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 10V | 60mOhm @ 25A, 10V | 5V @ 250µA | 90 nC @ 10 V | ±25V | 4100 pF @ 100 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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