Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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IPB60R040C7ATMA1MOSFET N-CH 650V 50A TO263-3 |
2833 | 15.60 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 50A (Tc) | 10V | 40mOhm @ 24.9A, 10V | 4V @ 1.24mA | 107 nC @ 10 V | ±20V | 4340 pF @ 400 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT13F120BMOSFET N-CH 1200V 14A TO247 |
3047 | 11.01 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 14A (Tc) | 10V | 1.4Ohm @ 7A, 10V | 5V @ 1mA | 145 nC @ 10 V | ±30V | 4765 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPW60R055CFD7XKSA1MOSFET N-CH 600V 38A TO247-3 |
2668 | 11.01 |
ДобавитьРасследования |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 38A (Tc) | 10V | 55mOhm @ 18A, 10V | 4.5V @ 900µA | 79 nC @ 10 V | ±20V | 3194 pF @ 400 V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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AUIRF7759L2TRMOSFET N-CH 75V 375A DIRECTFET |
2821 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 375A (Tc) | 10V | 2.3mOhm @ 96A, 10V | 4V @ 250µA | 300 nC @ 10 V | ±20V | 12222 pF @ 25 V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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STW56N65M2MOSFET N-CH 650V 49A TO247 |
600 | 11.14 |
ДобавитьРасследования |
Tube | MDmesh™ M2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 49A (Tc) | 10V | 62mOhm @ 24.5A, 10V | 4V @ 250µA | 93 nC @ 10 V | ±25V | 3900 pF @ 100 V | - | 358W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW12N120K5MOSFET N-CH 1200V 12A TO247 |
2101 | 11.16 |
ДобавитьРасследования |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 690mOhm @ 6A, 10V | 5V @ 100µA | 44.2 nC @ 10 V | ±30V | 1370 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFT36N50PMOSFET N-CH 500V 36A TO268 |
2041 | 11.22 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 36A (Tc) | 10V | 170mOhm @ 500mA, 10V | 5V @ 4mA | 93 nC @ 10 V | ±30V | 5500 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SPW32N50C3FKSA1MOSFET N-CH 560V 32A TO247-3 |
3903 | 11.29 |
ДобавитьРасследования |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 560 V | 32A (Tc) | 10V | 110mOhm @ 20A, 10V | 3.9V @ 1.8mA | 170 nC @ 10 V | ±20V | 4200 pF @ 25 V | - | 284W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRF300P226MOSFET N-CH 300V 100A TO247AC |
3392 | 11.31 |
ДобавитьРасследования |
Tube | StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 100A (Tc) | 10V | 19mOhm @ 45A, 10V | 4V @ 270µA | 191 nC @ 10 V | ±20V | 10030 pF @ 50 V | - | 556W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH36N60PMOSFET N-CH 600V 36A TO247AD |
3251 | 11.60 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 190mOhm @ 18A, 10V | 5V @ 4mA | 102 nC @ 10 V | ±30V | 5800 pF @ 25 V | - | 650W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FCH041N60FMOSFET N-CH 600V 76A TO247-3 |
2079 | 11.62 |
ДобавитьРасследования |
Tube | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 76A (Tc) | 10V | 41mOhm @ 38A, 10V | 5V @ 250µA | 360 nC @ 10 V | ±20V | 14365 pF @ 100 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW12N150K5MOSFET N-CH 1500V 7A TO247 |
2642 | 11.64 |
ДобавитьРасследования |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 7A (Tc) | 10V | 1.9Ohm @ 3.5A, 10V | 5V @ 100µA | 47 nC @ 10 V | ±30V | 1360 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW65N65DM2AGMOSFET N-CH 650V 60A TO247 |
2972 | 11.66 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 60A (Tc) | 10V | 50mOhm @ 30A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±25V | 5500 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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NTHL060N090SC1SICFET N-CH 900V 46A TO247-3 |
2937 | 11.66 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 46A (Tc) | 15V | 84mOhm @ 20A, 15V | 4.3V @ 5mA | 87 nC @ 15 V | +19V, -10V | 1770 pF @ 450 V | - | 221W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH6N150MOSFET N-CH 1500V 6A TO247 |
3765 | 11.67 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 6A (Tc) | 10V | 3.5Ohm @ 500mA, 10V | 5V @ 250µA | 67 nC @ 10 V | ±20V | 2230 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IMW120R140M1HXKSA1SICFET N-CH 1.2KV 19A TO247-3 |
2017 | 11.68 |
ДобавитьРасследования |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 19A (Tc) | 15V, 18V | 182mOhm @ 6A, 18V | 5.7V @ 2.5mA | 13 nC @ 18 V | +23V, -7V | 454 pF @ 800 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NTHL040N65S3FMOSFET N-CH 650V 65A TO247-3 |
2788 | 11.72 |
ДобавитьРасследования |
Tube | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 40mOhm @ 32.5A, 10V | 5V @ 6.5mA | 158 nC @ 10 V | ±30V | 5940 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH6N120MOSFET N-CH 1200V 6A TO247AD |
3891 | 11.73 |
ДобавитьРасследования |
Tube | HiPerFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 6A (Tc) | 10V | 2.6Ohm @ 3A, 10V | 5V @ 2.5mA | 56 nC @ 10 V | ±20V | 1950 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPW60R099CPFKSA1MOSFET N-CH 650V 31A TO247-3 |
3090 | 11.75 |
ДобавитьРасследования |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 31A (Tc) | 10V | 99mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80 nC @ 10 V | ±20V | 2800 pF @ 100 V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTQ100N25PMOSFET N-CH 250V 100A TO3P |
3779 | 11.76 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 100A (Tc) | 10V | 24mOhm @ 50A, 10V | 5V @ 250µA | 185 nC @ 10 V | ±20V | 6300 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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