Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IPI075N15N3GXKSA1MOSFET N-CH 150V 100A TO262-3 |
2322 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 100A (Tc) | 8V, 10V | 7.5mOhm @ 100A, 10V | 4V @ 270µA | 93 nC @ 10 V | ±20V | 5470 pF @ 75 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPP120N20NFDAKSA1MOSFET N-CH 200V 84A TO220-3 |
3480 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 84A (Tc) | 10V | 12mOhm @ 84A, 10V | 4V @ 270µA | 87 nC @ 10 V | ±20V | 6650 pF @ 100 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPB048N15N5ATMA1MOSFET N-CH 150V 120A TO263-3 |
2431 | 9.14 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 120A (Tc) | 8V, 10V | 4.8mOhm @ 60A, 10V | 4.6V @ 264µA | 100 nC @ 10 V | ±20V | 7800 pF @ 75 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFP31N50LPBFMOSFET N-CH 500V 31A TO247-3 |
3719 | 8.02 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 31A (Tc) | 10V | 180mOhm @ 19A, 10V | 5V @ 250µA | 210 nC @ 10 V | ±30V | 5000 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW18NM80MOSFET N-CH 800V 17A TO247-3 |
3300 | 8.05 |
ДобавитьРасследования |
Tube | MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 295mOhm @ 8.5A, 10V | 5V @ 250µA | 70 nC @ 10 V | ±30V | 2070 pF @ 50 V | - | 190W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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TK31N60X,S1FMOSFET N-CH 600V 30.8A TO247 |
3342 | 5.68 |
ДобавитьРасследования |
Tube | DTMOSIV-H | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 9.4A, 10V | 3.5V @ 1.5mA | 65 nC @ 10 V | ±30V | 3000 pF @ 300 V | Super Junction | 230W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFP60N25X3MOSFET N-CH 250V 60A TO220AB |
2810 | 8.12 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 60A (Tc) | 10V | 23mOhm @ 30A, 10V | 4.5V @ 1.5mA | 50 nC @ 10 V | ±20V | 3610 pF @ 25 V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STF45N65M5MOSFET N-CH 650V 35A TO220FP |
2024 | 8.14 |
ДобавитьРасследования |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 78mOhm @ 19.5A, 10V | 5V @ 250µA | 91 nC @ 10 V | ±25V | 3375 pF @ 100 V | - | 40W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHG47N60AE-GE3MOSFET N-CH 600V 43A TO247AC |
3692 | 8.16 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 43A (Tc) | 10V | 65mOhm @ 24A, 10V | 4V @ 250µA | 182 nC @ 10 V | ±30V | 3600 pF @ 100 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW22N95K5MOSFET N-CH 950V 17.5A TO247 |
2389 | 8.22 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, SuperMESH5™ | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 17.5A (Tc) | 10V | 330mOhm @ 9A, 10V | 5V @ 100µA | 48 nC @ 10 V | ±30V | 1550 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFA22N65X2MOSFET N-CH 650V 22A TO263 |
900 | 5.76 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Tc) | 10V | 160mOhm @ 11A, 10V | 5.5V @ 1.5mA | 38 nC @ 10 V | ±30V | 2310 pF @ 25 V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFA60N25X3MOSFET N-CH 250V 60A TO263AA |
2867 | 8.31 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 60A (Tc) | 10V | 23mOhm @ 30A, 10V | 4.5V @ 1.5mA | 50 nC @ 10 V | ±20V | 3610 pF @ 25 V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STW20NM50FDMOSFET N-CH 500V 20A TO247-3 |
3168 | 8.35 |
ДобавитьРасследования |
Tube | FDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 5V @ 250µA | 53 nC @ 10 V | ±30V | 1380 pF @ 25 V | - | 214W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW8N120K5MOSFET N-CH 1200V 6A TO247 |
3240 | 8.39 |
ДобавитьРасследования |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 6A (Tc) | 10V | 2Ohm @ 2.5A, 10V | 5V @ 100µA | 13.7 nC @ 10 V | - | 505 pF @ 100 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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NTHL160N120SC1SICFET N-CH 1200V 17A TO247-3 |
450 | 8.41 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 20V | 224mOhm @ 12A, 20V | 4.3V @ 2.5mA | 34 nC @ 20 V | +25V, -15V | 665 pF @ 800 V | - | 119W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFP72N20X3MMOSFET N-CH 200V 72A TO220 |
2593 | 8.49 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 72A (Tc) | 10V | 20mOhm @ 36A, 10V | 4.5V @ 1.5mA | 55 nC @ 10 V | ±20V | 3780 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW20N95K5MOSFET N-CH 950V 17.5A TO247-3 |
2694 | 8.55 |
ДобавитьРасследования |
Tube | SuperMESH5™ | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 17.5A (Tc) | 10V | 330mOhm @ 9A, 10V | 5V @ 100µA | 40 nC @ 10 V | ±30V | 1500 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW52NK25ZMOSFET N-CH 250V 52A TO247-3 |
3752 | 8.63 |
ДобавитьРасследования |
Tube | SuperMESH™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 250 V | 52A (Tc) | 10V | 45mOhm @ 26A, 10V | 4.5V @ 150µA | 160 nC @ 10 V | ±30V | 4850 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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TK090N65Z,S1FMOSFET N-CH 650V 30A TO247 |
2679 | 6.03 |
ДобавитьРасследования |
Tube | DTMOSVI | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Ta) | 10V | 90mOhm @ 15A, 10V | 4V @ 1.27mA | 47 nC @ 10 V | ±30V | 2780 pF @ 300 V | - | 230W (Tc) | 150°C | Through Hole |
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APT53N60BC6MOSFET N-CH 600V 53A TO247 |
3120 | 8.67 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 53A (Tc) | 10V | 70mOhm @ 25.8A, 10V | 3.5V @ 1.72mA | 154 nC @ 10 V | ±20V | 4020 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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