Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IXFK170N10PMOSFET N-CH 100V 170A TO264AA |
2136 | 13.21 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 170A (Tc) | 10V | 9mOhm @ 500mA, 10V | 5V @ 4mA | 198 nC @ 10 V | ±20V | 6000 pF @ 25 V | - | 715W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SIHG73N60E-GE3MOSFET N-CH 600V 73A TO247AC |
2643 | 13.26 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 73A (Tc) | 10V | 39mOhm @ 36A, 10V | 4V @ 250µA | 362 nC @ 10 V | ±30V | 7700 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTT100N25PMOSFET N-CH 250V 100A TO268 |
2133 | 13.28 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 100A (Tc) | 10V | 24mOhm @ 50A, 10V | 5V @ 250µA | 185 nC @ 10 V | ±20V | 6300 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFH70N20Q3MOSFET N-CH 200V 70A TO247AD |
2809 | 13.29 |
ДобавитьРасследования |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 70A (Tc) | 10V | 40mOhm @ 35A, 10V | 6.5V @ 4mA | 67 nC @ 10 V | ±20V | 3150 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IMW120R060M1HXKSA1SICFET N-CH 1.2KV 36A TO247-3 |
2116 | 16.75 |
ДобавитьРасследования |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 15V, 18V | 78mOhm @ 13A, 18V | 5.7V @ 5.6mA | 31 nC @ 18 V | +23V, -7V | 1060 pF @ 800 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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LSIC1MO120E0120SICFET N-CH 1200V 27A TO247-3 |
2152 | 16.81 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 27A (Tc) | 20V | 150mOhm @ 14A, 20V | 4V @ 7mA | 80 nC @ 20 V | +22V, -6V | 1125 pF @ 800 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW21N150K5MOSFET N-CH 1500V 14A TO247 |
2414 | 16.87 |
ДобавитьРасследования |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 14A (Tc) | 10V | 900mOhm @ 7A, 10V | 5V @ 100µA | 89 nC @ 10 V | ±30V | 3145 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH150N25X3MOSFET N-CH 250V 150A TO247 |
3612 | 16.97 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 150A (Tc) | 10V | 9mOhm @ 75A, 10V | 4.5V @ 4mA | 154 nC @ 10 V | ±20V | 10400 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN102N30PMOSFET N-CH 300V 88A SOT227B |
2116 | 27.58 |
ДобавитьРасследования |
Box | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 88A (Tc) | 10V | 33mOhm @ 500mA, 10V | 5V @ 4mA | 224 nC @ 10 V | ±20V | 7500 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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SCTH90N65G2V-7SICFET N-CH 650V 90A H2PAK-7 |
2818 | 36.73 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 90A (Tc) | 18V | 26mOhm @ 50A, 18V | 5V @ 1mA | 157 nC @ 18 V | +22V, -10V | 3300 pF @ 400 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IXTX120P20TMOSFET P-CH 200V 120A PLUS247-3 |
3824 | 30.63 |
ДобавитьРасследования |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 120A (Tc) | - | 30mOhm @ 60A, 10V | 4.5V @ 250µA | 740 nC @ 10 V | - | 73000 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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IXFB100N50PMOSFET N-CH 500V 100A PLUS264 |
3255 | 30.84 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 100A (Tc) | 10V | 49mOhm @ 50A, 10V | 5V @ 8mA | 240 nC @ 10 V | ±30V | 20000 pF @ 25 V | - | 1890W (Tc) | - | Through Hole |
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Таблицы данных |
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AON7400BMOSFET N-CH 30V 18A/40A 8DFN |
3819 | 0.46 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta), 40A (Tc) | 4.5V, 10V | 7.5mOhm @ 18A, 10V | 2.5V @ 250µA | 26 nC @ 10 V | ±20V | 1440 pF @ 15 V | - | 4.1W (Ta), 24W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NVR5198NLT3GMOSFET N-CH 60V 1.7A SOT23-3 |
3331 | 0.49 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 1.7A (Ta) | 4.5V, 10V | 155mOhm @ 1A, 10V | 2.5V @ 250µA | 5.1 nC @ 10 V | ±20V | 182 pF @ 25 V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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DMN3021LFDF-7MOSFET N-CH 30V 11.8A 6UDFN |
3200 | 0.55 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 11.8A (Ta) | 4.5V, 10V | 15mOhm @ 7A, 10V | 2.2V @ 250µA | 14 nC @ 10 V | ±20V | 706 pF @ 15 V | - | 2.03W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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PMPB12UNEXMOSFET N-CH 20V 11.4A 6DFN |
2004 | 0.56 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 11.4A (Ta) | 1.8V, 4.5V | 16mOhm @ 7.9A, 4.5V | 900mV @ 250µA | 17 nC @ 10 V | ±12V | 1220 pF @ 10 V | - | 470mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFA56N30X3MOSFET N-CH 300V 56A TO263AA |
2420 | 8.67 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 56A (Tc) | 10V | 27mOhm @ 28A, 10V | 4.5V @ 1.5mA | 56 nC @ 10 V | ±20V | 3750 pF @ 25 V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STW30N80K5MOSFET N-CH 800V 24A TO247-3 |
2090 | 8.87 |
ДобавитьРасследования |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 24A (Tc) | 10V | 180mOhm @ 12A, 10V | 5V @ 100µA | 43 nC @ 10 V | ±30V | 1530 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW50N65DM2AGMOSFET N-CH 650V 28A TO247 |
3189 | 8.91 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 28A (Tc) | 10V | 87mOhm @ 19A, 10V | 5V @ 250µA | 70 nC @ 10 V | ±25V | 3200 pF @ 100 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTP150N15X4MOSFET N-CH 150V 150A TO220 |
3676 | 8.96 |
ДобавитьРасследования |
Tube | Ultra X4 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 150A (Tc) | 10V | 7.2mOhm @ 75A, 10V | 4.5V @ 250µA | 105 nC @ 10 V | ±20V | 5500 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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