Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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IRFS7430PBFTRENCH <= 40V |
2140 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 6V, 10V | 1.2mOhm @ 100A, 10V | 3.9V @ 250µA | 460 nC @ 10 V | ±20V | 14240 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF6623TRPBFIRF6623 - 12V-300V N-CHANNEL POW |
2842 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 16A (Ta), 55A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | 2.2V @ 250µA | 17 nC @ 4.5 V | ±20V | 1360 pF @ 10 V | - | 1.4W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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RF1S530SM9A14A, 100V, 0.16OHM, N-CHANNEL PO |
3791 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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AUIRFB8407AUIRFB8407 - 20V-40V N-CHANNEL A |
2428 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 2mOhm @ 100A, 10V | 4V @ 150µA | 225 nC @ 10 V | ±20V | 7330 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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AUIRF1405ZS-7PAUIRF1405 - 55V-60V N-CHANNEL AU |
2770 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 120A (Tc) | 10V | 4.9mOhm @ 88A, 10V | 4V @ 150µA | 230 nC @ 10 V | ±20V | 5360 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRF6218SAUIRF6218 - 20V-150V P-CHANNEL A |
2565 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 27A (Tc) | 10V | 150mOhm @ 16A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 2210 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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RFP12N10L12A, 100V, 0.2OHM, N-CHANNEL, MO |
2513 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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BUK9635-55A,118N-CHANNEL TRENCHMOS LOGIC LEVEL |
2870 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 34A (Tc) | 5V, 10V | 32mOhm @ 25A, 10V | 2V @ 1mA | - | ±10V | 1173 pF @ 25 V | - | 85W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK9E08-55B,127NEXPERIA BUK9E08-55B - 75A, 55V |
2813 | 0.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 5V, 10V | 7mOhm @ 25A, 10V | 2V @ 1mA | 45 nC @ 5 V | ±15V | 5280 pF @ 25 V | - | 203W (Tc) | -55°C ~ 175°C (TJ) | |
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Таблицы данных |
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IRFB5620PBFIRFB5620 - 12V-300V N-CHANNEL PO |
2832 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 25A (Tc) | 10V | 72.5mOhm @ 15A, 10V | 5V @ 100µA | 38 nC @ 10 V | ±20V | 1710 pF @ 50 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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MCH3382-TL-HSMALL SIGNAL FIELD-EFFECT TRANSI |
3796 | 0.00 |
ДобавитьРасследования |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 2A (Ta) | 1.8V, 4.5V | 198mOhm @ 1A, 4.5V | - | 2.3 nC @ 4.5 V | ±9V | 170 pF @ 6 V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPW60R0706P600V COOLMOS N-CHANNEL POWER MOS |
2484 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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BUK9880-55/CU135NEXPERIA BUK9880-55 3.5A, 55V, 0 |
3032 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IPL60R095CFD7AUMA1HIGH POWER_NEW |
3709 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDC6302PSMALL SIGNAL FIELD-EFFECT TRANSI |
3449 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IPI120N10S403AKSA1IPI120N10S4-03 - 75V-100V N-CHAN |
2117 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 3.9mOhm @ 100A, 10V | 3.5V @ 180µA | 140 nC @ 10 V | ±20V | 10120 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NX7002BKMBYLNEXPERIA NX7002B - 60V, N-CHANNE |
2237 | 1.00 |
ДобавитьРасследования |
Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 350mA (Ta) | 5V, 10V | 2.8Ohm @ 200mA, 10V | 2.1V @ 250µA | 1 nC @ 10 V | ±20V | 23.6 pF @ 10 V | - | 350mW (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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NDS9407-GNDS9407-G - MOSFET BULK |
2833 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 3A (Ta) | 4.5V, 10V | 150mOhm @ 3A, 10V | 3V @ 250µA | 22 nC @ 10 V | ±20V | 732 pF @ 30 V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMA008P20LZSINGLE P-CHANNEL POWERTRENCH MOS |
3456 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 12A (Ta) | 1.5V, 4.5V | 13mOhm @ 2.5A, 4.5V | 1.4V @ 250µA | 39 nC @ 4.5 V | ±8V | 4383 pF @ 10 V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPD60R750E6ATMA1IPD60R750 - 600V COOLMOS N-CHANN |
2781 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ E6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.7A (Tc) | 10V | 750mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2 nC @ 10 V | ±20V | 373 pF @ 100 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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