Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
|
NDD60N745U1-1GNDD60N745 - POWER MOSFET 600V 6. |
3316 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.6A (Tc) | 10V | 745mOhm @ 3.25A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±25V | 440 pF @ 50 V | - | 84W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
NDS351NSMALL SIGNAL FIELD-EFFECT TRANSI |
3577 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.1A (Ta) | 4.5V, 10V | 160mOhm @ 1.4A, 10V | 2V @ 250µA | 3.5 nC @ 5 V | ±20V | 140 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
FDB8832-F085FDB8832 - N-CHANNEL LOGIC LEVEL |
3938 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 34A (Ta) | 4.5V, 10V | 1.9mOhm @ 80A, 10V | 3V @ 250µA | 265 nC @ 10 V | ±20V | 11400 pF @ 15 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
PMV100XPEA215NEXPERIA PMV100 - N-CHANNEL MOSF |
2958 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.4A (Ta) | - | 128mOhm @ 2.4A, 4.5V | 1.25V @ 250µA | 6 nC @ 4.5 V | ±12V | 386 pF @ 10 V | - | 463mW (Ta), 4.45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
BUK96180-100A,118NEXPERIA BUK96180-100A - 11A, 10 |
2975 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 11A (Ta) | - | 173mOhm @ 5A, 10V | 2V @ 1mA | - | ±15V | 619 pF @ 25 V | - | 54W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IPW90R1K0C3FKSA1IPW90R1 - 900V COOLMOS N-CHANNEL |
2002 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 5.7A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 3.5V @ 370µA | 34 nC @ 10 V | ±20V | 850 pF @ 100 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
| |
|
FDMC7208SDUAL N-CHANNEL POWERTRENCH MOSFE |
3086 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
|
PSMN6R0-30YLB,115NEXPERIA PSMN6R0-25YLD - 61A, 25 |
3424 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 71A (Tc) | 4.5V, 10V | 6.5mOhm @ 20A, 10V | 1.95V @ 1mA | 19 nC @ 10 V | ±20V | 1088 pF @ 15 V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
BSP135H6433XTMA1BSP135 - POWER FIELD-EFFECT TRAN |
3862 | 1.00 |
ДобавитьРасследования |
Bulk | SIPMOS® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 120mA (Ta) | 0V, 10V | 45Ohm @ 120mA, 10V | 1V @ 94µA | 4.9 nC @ 5 V | ±20V | 146 pF @ 25 V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IPU60R600C6AKMA1IPU60R600 - COOLMOS N-CHANNEL PO |
3040 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ C6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
FDD8780POWER FIELD-EFFECT TRANSISTOR, 3 |
3611 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 35A (Tc) | 4.5V, 10V | 8.5mOhm @ 35A, 10V | 2.5V @ 250µA | 29 nC @ 10 V | ±20V | 1440 pF @ 13 V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
NVD5890NT4G-VF01NVD5890 - POWER MOSFET 40V, 123A |
2937 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
|
IPDD60R102G7XTMA1IPDD60R102 - HIGH POWER_NEW |
3851 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ G7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 23A (Tc) | 10V | 102mOhm @ 7.8A, 10V | 4V @ 390µA | 34 nC @ 10 V | ±20V | 1320 pF @ 400 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
NDB6020PP-CHANNEL LOGIC LEVEL ENHANCEMEN |
2444 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 24A (Tc) | 4.5V | 50mOhm @ 12A, 4.5V | 1V @ 250µA | 35 nC @ 5 V | ±8V | 1590 pF @ 10 V | - | 60W (Tc) | -65°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
BUK7K134-100EXNEXPERIA BUK7K134 - DUAL N-CHANN |
2669 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
|
AUIRFN8458TRAUIRFN8458 - 20V-40V N-CHANNEL A |
2012 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
|
SPP11N65C3XKSA1SPP11N65C3 - 650V-700V COOLMOS N |
2051 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 60 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
CSD18532NQ5BCSD18532NQ5B - 60V, N CH NEXFET |
2219 | 1.00 |
ДобавитьРасследования |
Bulk | NexFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 22A (Ta), 100A (Tc) | 6V, 10V | 3.4mOhm @ 25A, 10V | 3.4V @ 250µA | 64 nC @ 10 V | ±20V | 5340 pF @ 30 V | - | 3.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
AUIRLR3636AUIRLR3636 - 55V-60V N-CHANNEL A |
2943 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | - | 6.8mOhm @ 50A, 10V | 2.5V @ 100µA | 49 nC @ 4.5 V | ±16V | 3779 pF @ 50 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
NDPL100N10BGMOSFET N-CH 100V 100A TO220 |
2057 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Ta) | 10V, 15V | 7.2mOhm @ 50A, 15V | 4V @ 1mA | 35 nC @ 10 V | ±20V | 2950 pF @ 50 V | - | 2.1W (Ta), 110W (Tc) | 175°C (TJ) | Through Hole |
Запрос котировок
