Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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AUIRF1324STRL7PAUIRF1324 - 20V-40V N-CHANNEL AU |
3457 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 24 V | 340A (Tc) | 10V | 1.65mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 7590 pF @ 24 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK7Y20-30B,115NEXPERIA BUK7Y20 - N-CHANNEL TRE |
3116 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 39.5A (Tc) | 10V | 20mOhm @ 20A, 10V | 4V @ 1mA | 11.2 nC @ 10 V | ±20V | 688 pF @ 25 V | - | 59W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF6218PBFIRF6218 - 20V-250V P-CHANNEL POW |
3206 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 27A (Tc) | 10V | 150mOhm @ 16A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 2210 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPB067N08N3GATMA1IPB067N08N3 G - 20V-30V N-CHANNE |
2682 | 1.00 |
ДобавитьРасследования |
Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 6V, 10V | 6.7mOhm @ 73A, 10V | 3.5V @ 73µA | 56 nC @ 10 V | ±20V | 3840 pF @ 40 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPB80N06S4L05ATMA2MOSFET_)40V,60V) |
3791 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 4.5V, 10V | 5.1mOhm @ 80A, 10V | 2.2V @ 60µA | 110 nC @ 10 V | ±16V | 8180 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFB61N15DPBFIRFB61N15 - 12V-300V N-CHANNEL P |
2910 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 60A (Tc) | - | 32mOhm @ 36A, 10V | 5.5V @ 250µA | 140 nC @ 10 V | ±30V | 3470 pF @ 25 V | - | 2.4W (Ta), 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FQD5P10TMPOWER FIELD-EFFECT TRANSISTOR, 3 |
3177 | 1.00 |
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Bulk | QFET® | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 3.6A (Tc) | 10V | 1.05Ohm @ 1.8A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±30V | 250 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPD25DP06LMATMA1IPD06P005 - TRENCH 40<-<100V |
3156 | 0.00 |
ДобавитьРасследования |
Bulk | OptiMOS™ | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 6.5A (Tc) | 4.5V, 10V | 250mOhm @ 6.5A, 10V | 2V @ 270µA | 13.8 nC @ 10 V | ±20V | 420 pF @ 30 V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FCP190N60EPOWER MOSFET, N-CHANNEL, SUPERFE |
2246 | 1.00 |
ДобавитьРасследования |
Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.6A (Tc) | 10V | 190mOhm @ 10A, 10V | 3.5V @ 250µA | 82 nC @ 10 V | ±20V | 3175 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDB86563-F085N-CHANNEL POWERTRENCH MOSFET, 60 |
3765 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 110A (Tc) | 10V | 1.8mOhm @ 80A, 10V | 4V @ 250µA | 163 nC @ 10 V | ±20V | 10100 pF @ 30 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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ISC026N03L5SATMA1TRENCH <= 40V |
2087 | 1.00 |
ДобавитьРасследования |
Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Ta), 100A (Tc) | 4.5V, 10V | 2.6mOhm @ 30A, 10V | 2V @ 250µA | 26 nC @ 10 V | ±20V | 1700 pF @ 15 V | - | 2.5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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BUK9M11-40HXBUK9M11-40H - N-CHANNEL 40V, LOG |
3138 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 35A (Ta) | 4.5V, 10V | 11mOhm @ 10A, 10V | 2.2V @ 1mA | 21 nC @ 10 V | +16V, -10V | 1345 pF @ 25 V | - | 50W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRFR48ZTRLAUIRFR48Z - 20V-800V AUTOMOTIVE |
3428 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 50µA | 60 nC @ 10 V | ±20V | 1720 pF @ 25 V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SPP20N60C3POWER FIELD-EFFECT TRANSISTOR, 2 |
3729 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IPP50R190CEXKSA1IPP50R190 - 500V, 0.19OHM, N-CHA |
2361 | 0.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ CE | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 18.5A (Tc) | 13V | 190mOhm @ 6.2A, 13V | 3.5V @ 510µA | 47.2 nC @ 10 V | ±20V | 1137 pF @ 100 V | - | 127W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDS6898AZ-F085FDS6898 - DUAL N-CHANNEL LOGIC L |
2617 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDH047AN08ADFDH047AN08A0 - 75V N-CHANNEL POW |
2003 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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NVD6416ANLT4G-001-VF01NVD6416 - N-CHANNEL POWER MOSFET |
2165 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 19A (Tc) | 4.5V, 10V | 74mOhm @ 19A, 10V | 2.2V @ 250µA | 40 nC @ 10 V | ±20V | 1000 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPW90R120C3FKSA1MOSFET N-CH 900V 36A TO247-3 COO |
2813 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 36A (Tc) | 10V | 120mOhm @ 26A, 10V | 3.5V @ 2.9mA | 270 nC @ 10 V | ±20V | 6800 pF @ 100 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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NVMFS6B25NLWFT1GNVMFS6B25 - SINGLE N-CHANNEL POW |
3573 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 8A (Ta), 33A (Ta) | 4.5V, 10V | 24mOhm @ 20A, 10V | 3V @ 250µA | 13.5 nC @ 10 V | ±16V | 905 pF @ 25 V | - | 3.6W (Ta), 62W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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