Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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PMN70EPEXPMN70EPE - 30 V, P-CHANNEL TRENC |
3425 | 1.00 |
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Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 4.4A (Ta) | 4.5V, 10V | 80mOhm @ 3.3A, 10V | 3V @ 250µA | 11.5 nC @ 10 V | ±20V | 370 pF @ 15 V | - | 570mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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BSS670S2LH6433XTMA1SMALL SIGNAL MOSFETS |
2408 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NTLUS4C12NTBGNTLUS4C12N - SINGLE N-CHANNEL CO |
3763 | 1.00 |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.8A (Ta) | 3.3V, 10V | 9mOhm @ 9A, 10V | 2.1V @ 250µA | 18 nC @ 10 V | ±20V | 1172 pF @ 15 V | - | 630mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRF7410GTRPBFIRF7410 - 16A, 12V, 0.007OHM, P- |
3593 | 1.00 |
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Bulk | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 16A (Ta) | 1.8V, 4.5V | 7mOhm @ 16A, 4.5V | 900mV @ 250µA | 91 nC @ 4.5 V | ±8V | 8676 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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AUIRFS4310ZAUIRFS4310 - 75V-100V N-CHANNEL |
2675 | 1.00 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 6mOhm @ 75A, 10V | 4V @ 150µA | 170 nC @ 10 V | ±20V | 6860 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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PMT560ENEAXNEXPERIA PMT560ENEA - 100V N-CHA |
2597 | 1.00 |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.1A (Ta) | 4.5V, 10V | 715mOhm @ 1.1A, 10V | 2.7V @ 250µA | 4.4 nC @ 10 V | ±20V | 112 pF @ 50 V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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PMV130ENEARNEXPERIA PMV130 - 40 V, N-CHANNE |
2958 | 1.00 |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 2.1A (Ta) | 4.5V, 10V | 120mOhm @ 1.5A, 10V | 2.5V @ 250µA | 3.6 nC @ 10 V | ±20V | 170 pF @ 20 V | - | 460mW (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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BUK9GTHP-55PJTR,51IPOC TRENCHFET |
2998 | 1.00 |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | - | - | - | - | - | - | - | - | - | - | Surface Mount |
![]() Таблицы данных |
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FDC658AP-GFDC658AP - MOSFET 30V 50.0 MOHM |
2116 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FDP8860POWER FIELD-EFFECT TRANSISTOR, 8 |
3589 | 1.00 |
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Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 2.5mOhm @ 80A, 10V | 2.5V @ 250µA | 222 nC @ 10 V | ±20V | 12240 pF @ 15 V | - | 254W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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HUF75345P3N-CHANNEL ULTRAFET POWER MOSFET |
586 | 1.29 |
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Bulk | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 275 nC @ 20 V | ±20V | 4000 pF @ 25 V | - | 325W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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MCH6606-TL-EMCH6606 - MOSFET |
3593 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() Таблицы данных |
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PMN120ENEXPMN120ENE - 60V, N-CHANNEL TRENC |
3202 | 1.00 |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 3.1A (Ta) | 4.5V, 10V | 123mOhm @ 2.4A, 10V | 2.7V @ 250µA | 7.4 nC @ 10 V | ±20V | 275 pF @ 30 V | - | 1.4W (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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FDMC013P030ZP-CHANNEL POWERTRENCH MOSFET -30 |
3228 | 1.00 |
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Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 54A (Tc) | 4.5V, 10V | 7mOhm @ 14A, 10V | 3V @ 250µA | 135 nC @ 10 V | ±25V | 5785 pF @ 15 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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FDMS7670POWER FIELD-EFFECT TRANSISTOR, 2 |
2533 | 0.00 |
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Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta), 42A (Tc) | 4.5V, 10V | 3.8mOhm @ 21A, 10V | 3V @ 250µA | 56 nC @ 10 V | ±20V | 4105 pF @ 15 V | - | 2.5W (Ta), 62W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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BUK7506-55A,127NEXPERIA BUK7506-55A - POWER FIE |
2985 | 1.00 |
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Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 6.3mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 6000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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FCPF16N60NTPOWER FIELD-EFFECT TRANSISTOR, 1 |
3322 | 1.00 |
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Bulk | SupreMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 199mOhm @ 8A, 10V | 4V @ 250µA | 52.3 nC @ 10 V | ±30V | 2170 pF @ 100 V | - | 35.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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PSMN8R5-100PSFQNEXPERIA PSMN8R5 - NEXTPOWER 100 |
3657 | 1.00 |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 98A (Ta) | 7V, 10V | 8.7mOhm @ 25A, 10V | 4V @ 1mA | 44.5 nC @ 10 V | ±20V | 3181 pF @ 50 V | - | 183W (Ta) | -55°C ~ 175°C (TJ) | Through Hole |
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IPD60R380P6ATMA1XPD60R380 - LOW POWER_LEGACY |
2318 | 1.00 |
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Bulk | CoolMOS™ P6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 4.5V @ 320µA | 19 nC @ 10 V | ±20V | 877 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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FDC606PSMALL SIGNAL FIELD-EFFECT TRANSI |
2619 | 0.00 |
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Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 6A (Ta) | 1.8V, 4.5V | 26mOhm @ 6A, 4.5V | 1.5V @ 250µA | 25 nC @ 4.5 V | ±8V | 1699 pF @ 6 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |