Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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MMBF5434MMBF5434 - N-CHANNEL SWITCH |
3537 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IMW65R107M1HXKSA1SILICON CARBIDE MOSFET |
3341 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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PMXB56ENZNEXPERIA PMXB56EN - 30 V, N-CHAN |
2092 | 1.00 |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 3.2A (Ta) | 4.5V, 10V | 55mOhm @ 3.2A, 10V | 2V @ 250µA | 6.3 nC @ 10 V | ±20V | 209 pF @ 15 V | - | 400mW (Ta), 8.33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMF6823FDMF6823 - PMIC - FULL, HALF-BRI |
2441 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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NVLJD4007NZTBGNVLJD4007 - DUAL N-CHANNEL SMALL |
3926 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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BUK9614-60E,118NEXPERIA BUK9614-60E - POWER FIE |
2308 | 1.00 |
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Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 56A (Tc) | 5V | 12.8mOhm @ 15A, 10V | 2.1V @ 1mA | 20.5 nC @ 5 V | ±10V | 2651 pF @ 25 V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPP60R600E6XKSA1IPP60R600 - COOLMOS N-CHANNEL PO |
3760 | 1.00 |
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Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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NTR1P02LT1HSMALL SIGNAL FIELD-EFFECT TRANSI |
3879 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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PSMN070-200B,118NEXPERIA PSMN070 - 35A, 200V, 0. |
2113 | 1.09 |
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Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 35A (Tc) | 10V | 70mOhm @ 17A, 10V | 4V @ 1mA | 77 nC @ 10 V | ±20V | 4570 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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DI028P03PTMOSFET, -30V, -28A, 40W |
2928 | 1.63 |
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Tape & Reel (TR),Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 28A (Tc) | 4.5V, 10V | 9mOhm @ 20A, 10V | 2.5V @ 250µA | 30 nC @ 10 V | ±20V | 2060 pF @ 15 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRLR3705ZTRMOSFET N-CH 55V 42A DPAK |
2303 | 0.00 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | - | 8mOhm @ 42A, 10V | 3V @ 250µA | 66 nC @ 5 V | - | 2900 pF @ 25 V | - | - | - | Surface Mount |
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Таблицы данных |
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IRFF2334.5A, 150V, 0.6OHM, N-CHANNEL PO |
2728 | 0.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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AUIRLR2905ZTRLMOSFET N-CH 55V 42A DPAK |
2733 | 0.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | - | 13.5mOhm @ 36A, 10V | 3V @ 250µA | 35 nC @ 5 V | - | 1570 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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DI150N03PQMOSFET, 30V, 150A, 86W |
3480 | 2.27 |
ДобавитьРасследования |
Tape & Reel (TR),Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 1.1mOhm @ 25A, 10V | 2.5V @ 250µA | 37 nC @ 4.5 V | ±20V | 7460 pF @ 15 V | - | 86W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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DI110N03PQMOSFET, 30V, 110A, 56W |
3202 | 2.28 |
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Tape & Reel (TR),Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 110A (Tc) | 4.5V, 10V | 2.65mOhm @ 20A, 10V | 2.5V @ 250µA | 14 nC @ 4.5 V | ±20V | 7462 pF @ 15 V | - | 56W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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DI080N06PQMOSFET, 60V, 80A, 80W |
3569 | 2.33 |
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Tape & Reel (TR),Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 4.5V, 10V | 3.6mOhm @ 40A, 10V | 3V @ 250µA | 56 nC @ 10 V | ±20V | 4128 pF @ 30 V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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DI040P04D1-AQMOSFET -40V -40A P 52W |
2238 | 2.37 |
ДобавитьРасследования |
Tape & Reel (TR),Tape & Reel (TR) | Automotive, AEC-Q101 | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 40A (Tc) | 4.5V, 10V | 15mOhm @ 10A, 10V | 2.5V @ 250µA | 59 nC @ 10 V | ±20V | 3538 pF @ 20 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK9275-100A,118NOW NEXPERIA BUK9275-100A - 21.7 |
2485 | 1.00 |
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Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 21.7A (Tc) | 4.5V, 10V | 72mOhm @ 10A, 10V | 2V @ 1mA | - | ±10V | 1690 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SPP17N80C3XKSA1LOW POWER_LEGACY |
3712 | 1.00 |
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Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 177 nC @ 10 V | ±20V | 2320 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDMC8015LPOWER FIELD-EFFECT TRANSISTOR, 7 |
3103 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 7A (Ta), 18A (Tc) | 4.5V, 10V | 26mOhm @ 7A, 10V | 3V @ 250µA | 19 nC @ 10 V | ±20V | 945 pF @ 20 V | - | 2.3W (Ta), 24W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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