Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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PSMN005-75B,118N-CHANNEL TRENCHMOS SILICONMAX S |
2378 | 1.00 |
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Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 75A (Tc) | 10V | 5mOhm @ 25A, 10V | 4V @ 1mA | 165 nC @ 10 V | ±20V | 8250 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF6636TRPBFIRF6636 - 12V-300V N-CHANNEL POW |
2581 | 1.00 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 18A (Ta), 81A (Tc) | 4.5V, 10V | 4.5mOhm @ 18A, 10V | 2.45V @ 250µA | 27 nC @ 4.5 V | ±20V | 2420 pF @ 10 V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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FCP36N60NPOWER MOSFET, N-CHANNEL, SUPREMO |
3773 | 1.00 |
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Bulk | SupreMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 90mOhm @ 18A, 10V | 4V @ 250µA | 112 nC @ 10 V | ±30V | 4785 pF @ 100 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FQA19N60POWER FIELD-EFFECT TRANSISTOR, 1 |
3120 | 1.00 |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18.5A (Tc) | 10V | 380mOhm @ 9.3A, 10V | 5V @ 250µA | 90 nC @ 10 V | ±30V | 3600 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPB019N08N5ATMA1TRENCH 40<-<100V |
2282 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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PMCM4401VNE/S500ZNEXPERIA PMCM4401VNE - 12V, N-CH |
2050 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FCD5N60-F085FCD5N60_F085 - N-CHANNEL SUPERFE |
3406 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, SuperFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.6A (Tc) | 10V | 1.1Ohm @ 4.6A, 10V | 5V @ 250µA | 21 nC @ 10 V | ±30V | 570 pF @ 25 V | - | 54W (Tj) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NTMD4184PFR2GDUAL P-CHANNEL FETKY POWER MOSFE |
2878 | 1.00 |
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Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 2.3A (Ta) | 4.5V, 10V | 95mOhm @ 3A, 10V | 3V @ 250µA | 4.2 nC @ 4.5 V | ±20V | 360 pF @ 10 V | Schottky Diode (Isolated) | 770mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NDS355AN-NB9L007ANDS355AN - N-CHANNEL LOGIC LEVEL |
2170 | 0.00 |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.7A (Ta) | 4.5V, 10V | 85mOhm @ 1.9A, 10V | 2V @ 250µA | 5 nC @ 5 V | ±20V | 195 pF @ 15 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPL60R180P6AUMA1HIGH POWER_LEGACY |
2219 | 1.00 |
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Bulk | CoolMOS™ P6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 22.4A (Tc) | 10V | 180mOhm @ 9A, 10V | 4.5V @ 750µA | 44 nC @ 10 V | ±20V | 2080 pF @ 100 V | - | 176W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPW65R041CFDFKSA2HIGH POWER_LEGACY |
2583 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ CFD2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 68.5A (Tc) | 10V | 41mOhm @ 33.1A, 10V | 4.5V @ 3.3mA | 300 nC @ 10 V | ±20V | 8400 pF @ 100 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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ISZ019N03L5SATMA1TRENCH <= 40V |
2260 | 1.00 |
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Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta), 40A (Tc) | 4.5V, 10V | 1.9mOhm @ 20A, 10V | 2V @ 250µA | 44 nC @ 10 V | ±20V | 2800 pF @ 15 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRF3205ZAUIRF3205Z - 55V-60V N-CHANNEL A |
3551 | 1.00 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 3450 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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BUK9Y11-80EXNEXPERIA BUK9Y11 - TRANSISTOR >3 |
2973 | 1.00 |
ДобавитьРасследования |
Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 84A (Tc) | 5V | 10mOhm @ 25A, 10V | 2.1V @ 1mA | 44.2 nC @ 5 V | ±10V | 6506 pF @ 25 V | - | 194W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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ISC045N03L5SATMA1TRENCH <= 40V |
2214 | 1.00 |
ДобавитьРасследования |
Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta), 63A (Tc) | 4.5V, 10V | 4.5mOhm @ 30A, 10V | 2V @ 250µA | 13 nC @ 10 V | ±20V | 870 pF @ 15 V | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK9K5R6-30EXBUK9K5R6-30E - DUAL N-CHANNEL 30 |
2149 | 0.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDG327NN-CHANNEL POWERTRENCH MOSFET, 20 |
2106 | 1.00 |
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Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 1.5A (Ta) | 1.8V, 4.5V | 90mOhm @ 1.5A, 4.5V | 1.5V @ 250µA | 6.3 nC @ 4.5 V | ±8V | 423 pF @ 10 V | - | 420mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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HP4936DYPOWER FIELD-EFFECT TRANSISTOR, 5 |
2080 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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PSMN012-80BS,118NEXPERIA PSMN012-80BS - 74A, 80V |
2082 | 1.00 |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 74A (Tc) | 10V | 11mOhm @ 15A, 10V | 4V @ 1mA | 43 nC @ 10 V | ±20V | 2782 pF @ 12 V | - | 148W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDS8928APOWER FIELD-EFFECT TRANSISTOR, 5 |
2172 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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