Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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AUIRFR2405AUIRFR2405 - 55V-60V N-CHANNEL A |
2219 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 30A (Tc) | 10V | 16mOhm @ 34A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 2430 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRFN8403TRAUIRFN8403 - 20V-40V N-CHANNEL A |
2029 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 95A (Tc) | - | 3.3mOhm @ 50A, 10V | 3.9V @ 100µA | 98 nC @ 10 V | ±20V | 3174 pF @ 25 V | - | 4.3W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRF7319QTRMOSFET_(20V,40V) |
3490 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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AUIRF7669L2TRCTAUIRF7669 - 75V-100V N-CHANNEL A |
3361 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 19A (Ta), 114A (Tc) | 10V | 4.4mOhm @ 68A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±20V | 5660 pF @ 25 V | - | 3.3W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFHM8342TRPBFIRFHM8342 - 12V-300V N-CHANNEL P |
2337 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta), 28A (Tc) | - | 16mOhm @ 17A, 10V | 2.35V @ 25µA | 10 nC @ 10 V | ±20V | 560 pF @ 25 V | - | 2.6W (Ta), 20W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FGD3050G2FGD3050G2 - N-CHANNEL IGNITION N |
3601 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDD8796POWER FIELD-EFFECT TRANSISTOR, 3 |
2996 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 35A (Tc) | 4.5V, 10V | 5.7mOhm @ 35A, 10V | 2.5V @ 250µA | 52 nC @ 10 V | ±20V | 2610 pF @ 13 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NTDV20N06LT4GSINGLE N-CHANNEL LOGIC LEVEL POW |
2175 | 1.00 |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Ta) | 5V | 48mOhm @ 10A, 5V | 2V @ 250µA | 32 nC @ 5 V | ±15V | 990 pF @ 25 V | - | 1.36W (Ta), 60W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount |
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PSMN034-100PS,127PSMN034-100PS - N-CHANNEL 100V S |
3886 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 32A (Tc) | 10V | 34.5mOhm @ 15A, 10V | 4V @ 1mA | 23.8 nC @ 10 V | ±20V | 1201 pF @ 50 V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NVTFS5824NLTWGNVTFS5824 - POWER MOSFET 60V, 20 |
2905 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 37A (Tc) | 4.5V, 10V | 20.5mOhm @ 10A, 10V | 2.5V @ 250µA | 16 nC @ 10 V | ±20V | 850 pF @ 25 V | - | 3.2W (Ta), 57W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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MCH6601-TL-EMCH6601 - P-CHANNEL POWER MOSFET |
2869 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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STD5407NT4GSTD5407 - POWER MOSFET 40V, 38A |
3629 | 0.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 7.6A (Ta), 38A (Tc) | 5V, 10V | 26mOhm @ 20A, 10V | 3.5V @ 250µA | 20 nC @ 10 V | ±20V | 1000 pF @ 32 V | - | 2.9W (Ta), 75W (Tc) | -55°C ~ 175°C (TJ) | |
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Таблицы данных |
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NTD20N03L27T4GPOWER FIELD-EFFECT TRANSISTOR, 2 |
3540 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta) | 4V, 5V | 27mOhm @ 10A, 5V | 2V @ 250µA | 18.9 nC @ 10 V | ±20V | 1260 pF @ 25 V | - | 1.75W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NX7002AK2,215NEXPERIA NX7002AK - SMALL SIGNAL |
2811 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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RF1S9640SM9A11A, 200V, 0.5OHM, P-CHANNEL POW |
3435 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IPW60R190E6FKSA1IPW60R190 - 600V COOLMOS N-CHANN |
2743 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63 nC @ 10 V | ±20V | 1400 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SPI11N65C3XKSA1LOW POWER_LEGACY |
3411 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 60 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDD8870-F085FDD8870 - N-CHANNEL POWERTRENCH |
2826 | 0.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta) | 4.5V, 10V | 3.9mOhm @ 35A, 10V | 2.5V @ 250µA | 118 nC @ 10 V | ±20V | 5160 pF @ 15 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FQPF11N40CPOWER FIELD-EFFECT TRANSISTOR, 1 |
3896 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 10.5A (Tc) | 10V | 530mOhm @ 5.25A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±30V | 1090 pF @ 25 V | - | 44W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FQPF9N50CFPOWER FIELD-EFFECT TRANSISTOR, 9 |
3001 | 1.00 |
ДобавитьРасследования |
Bulk | FRFET® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 9A (Tc) | 10V | 850mOhm @ 4.5A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±30V | 1030 pF @ 25 V | - | 44W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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