Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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AUIRFS3806TRLMOSFET_)40V,60V) |
3061 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | 4V @ 50µA | 30 nC @ 10 V | ±20V | 1150 pF @ 50 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NDS355AN-F169N-CHANNEL LOGIC LEVEL ENHANCEMEN |
3378 | 1.00 |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.7A (Ta) | 4.5V, 10V | 85mOhm @ 1.9A, 10V | 2V @ 250µA | 5 nC @ 5 V | ±20V | 195 pF @ 15 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRF2804S-7PAUIRF2804 - 20V-40V N-CHANNEL AU |
3706 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 1.6mOhm @ 160A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 6930 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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RF1K4909096RF1K4909096 - POWER FIELD-EFFECT |
2395 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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BUK7K89-100EXNEXPERIA BUK7K89 - DUAL N-CHANNE |
2860 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IPP50R280CEXKSA1CONSUMER |
3111 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 13A (Tc) | 13V | 280mOhm @ 4.2A, 13V | 3.5V @ 350µA | 32.6 nC @ 10 V | ±20V | 773 pF @ 100 V | Super Junction | 92W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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NTHL080N120SC1SILICON CARBIDE MOSFET, N-CHANNE |
2978 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 44A (Tc) | 20V | 110mOhm @ 20A, 20V | 4.3V @ 5mA | 56 nC @ 20 V | +25V, -15V | 1670 pF @ 800 V | - | 348W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFB38N20DPBFIRFB38N20 - 12V-300V N-CHANNEL P |
3558 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 43A (Tc) | 10V | 54mOhm @ 26A, 10V | 5V @ 250µA | 91 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPD50N04S308ATMA1IPD50N04 - 20V-40V N-CHANNEL AUT |
2855 | 1.00 |
ДобавитьРасследования |
Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 10V | 7.5mOhm @ 50A, 10V | 4V @ 40µA | 35 nC @ 10 V | ±20V | 2350 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF6617TRPBFIRF6617 - 12V-300V N-CHANNEL POW |
3599 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta), 55A (Tc) | 4.5V, 10V | 8.1mOhm @ 15A, 10V | 2.35V @ 250µA | 17 nC @ 4.5 V | ±20V | 1300 pF @ 15 V | - | 2.1W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDP032N08BN-CHANNEL POWERTRENCH MOSFET 80V |
3432 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IPL60R285P7AUMA1LOW POWER_NEW |
2363 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 285mOhm @ 3.8A, 10V | 4V @ 190µA | 18 nC @ 10 V | ±20V | 761 pF @ 400 V | - | 59W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NVMFS5844NLT3GPOWER MOSFET, SINGLE N-CHANNEL |
3520 | 0.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 11.2A (Ta) | 4.5V, 10V | 12mOhm @ 10A, 10V | 2.3V @ 250µA | 30 nC @ 10 V | ±20V | 1460 pF @ 25 V | - | 3.7W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | |
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Таблицы данных |
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GT105N10FN100V,RD(MAX)<10.5M@10V,RD(MAX)< |
2458 | 1.47 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 25A (Tc) | 4.5V, 10V | 10.5mOhm @ 11A, 10V | 2.5V @ 250µA | 54 nC @ 10 V | ±20V | - | - | 20.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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BUK7Y98-80E,115NEXPERIA BUK7Y98 - N-CHANNEL 80 |
2509 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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HUF76639S3ST-F085HUF76639 - N-CHANNEL LOGIC LEVEL |
3985 | 0.00 |
ДобавитьРасследования |
Bulk | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 51A (Tc) | 10V | 26mOhm @ 51A, 10V | 3V @ 250µA | 86 nC @ 10 V | ±16V | 2400 pF @ 25 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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PMPB12UNEAXPMPB12UNEA - 20 V, N-CHANNEL TRE |
2401 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 7.9A (Ta) | 1.8V, 4.5V | 18mOhm @ 7.9A, 4.5V | 0.9V @ 250µA | 17 nC @ 10 V | ±12V | 1220 pF @ 10 V | - | 1.6W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FCD3400N80ZPOWER FIELD-EFFECT TRANSISTOR, N |
2046 | 1.00 |
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Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2A (Tc) | 10V | 3.4Ohm @ 1A, 10V | 4.5V @ 200µA | 9.6 nC @ 10 V | ±20V | 400 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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LTC1624CS8#PBFLTC1624 - HI EFF SO-8, N-CHENNEL |
3030 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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BUK9M6R0-40HXBUK9M6R0-40H - N-CHANNEL 40V, LO |
3010 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Ta) | 4.5V, 10V | 6mOhm @ 20A, 10V | 2.15V @ 1mA | 36 nC @ 10 V | +16V, -10V | 2470 pF @ 25 V | - | 70W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
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