Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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IPI65R600C6XKSA1IPI65R600 - 650V AND 700V COOLMO |
2439 | 1.00 |
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Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FCB199N65S3POWER MOSFET, N-CHANNEL, SUPERFE |
2009 | 1.00 |
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Bulk | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 14A (Tc) | 10V | 199mOhm @ 7A, 10V | 4.5V @ 1.4mA | 30 nC @ 10 V | ±30V | 1225 pF @ 400 V | - | 98W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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BUK9628-55A,118N-CHANNEL TRENCHMOS LOGIC LEVEL |
2727 | 1.00 |
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Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 4.5V, 5V | 25mOhm @ 15A, 10V | 2V @ 1mA | - | ±10V | 1725 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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NVMFD5C478NLWFT1GDUAL N-CHANNEL POWER MOSFET 40 V |
3607 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPL65R650C6SE8211ATMA1IPL65R650 - 650V AND 700V COOLMO |
3853 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NVMFS6B05NLWFT3GNVMFS6B05 - SINGLE N-CHANNEL POW |
2445 | 1.00 |
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Bulk | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 114A (Tc) | 4.5V, 10V | 5.6mOhm @ 20A, 10V | 3V @ 250µA | 6.8 nC @ 10 V | ±16V | 3980 pF @ 25 V | - | 3.8W (Ta), 165W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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NVD3055L170T4GN-CHANNEL POWER LOGIC LEVEL MOSF |
2668 | 1.00 |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 9A (Ta) | 5V | 170mOhm @ 4.5A, 5V | 2V @ 250µA | 10 nC @ 5 V | ±15V | 275 pF @ 25 V | - | 1.5W (Ta), 28.5W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount |
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FDMS8670SPOWER FIELD-EFFECT TRANSISTOR, 2 |
2004 | 1.00 |
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Bulk | PowerTrench®, SyncFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta), 42A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 3V @ 1mA | 73 nC @ 10 V | ±20V | 4000 pF @ 15 V | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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MMBF4118SMALL SIGNAL FIELD-EFFECT TRANSI |
2018 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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BUK7623-75A,118N-CHANNEL TRENCHMOS STANDARD LEV |
2075 | 1.00 |
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Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 53A (Tc) | 10V | 23mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 2385 pF @ 25 V | - | 138W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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BUK762R6-40E,118NOW NEXPERIA BUK762R6-40E 100A |
2324 | 0.00 |
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Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 2.6mOhm @ 25A, 10V | 4V @ 1mA | 91 nC @ 10 V | ±20V | 7130 pF @ 25 V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | |
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IRLR3717TRRPBFTRENCH <= 40V |
3392 | 1.00 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 120A (Tc) | 4.5V, 10V | 4mOhm @ 15A, 10V | 2.45V @ 250µA | 31 nC @ 4.5 V | ±20V | 2830 pF @ 10 V | - | 89W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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FDMA410NZTULTRA THIN N-CHANNEL 1.5 V POWER |
3989 | 1.00 |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 9.5A (Ta) | 1.5V, 4.5V | 23mOhm @ 9.5A, 4.5V | 1V @ 250µA | 14 nC @ 4.5 V | ±8V | 1310 pF @ 10 V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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FDS6375SMALL SIGNAL FIELD-EFFECT TRANSI |
3769 | 1.00 |
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Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 8A (Ta) | 2.5V, 4.5V | 24mOhm @ 8A, 4.5V | 1.5V @ 250µA | 36 nC @ 4.5 V | ±8V | 2694 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
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AUIRFR1010ZAUIRFR1010 - 55V-60V N-CHANNEL A |
2879 | 1.00 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | - | 7.5mOhm @ 42A, 10V | 4V @ 100µA | 95 nC @ 10 V | - | 2840 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRFZ44VZSPBFIRFZ44 - TRENCH 40<-<100V |
3089 | 1.00 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 57A (Tc) | 10V | 12mOhm @ 34A, 10V | 4V @ 250µA | 65 nC @ 10 V | ±20V | 1690 pF @ 25 V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPD60R1K4C6ATMA1IPD60R1K4 - LOW POWER_LEGACY |
2805 | 0.00 |
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Bulk | CoolMOS™ C6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.2A (Tc) | 10V | 1.4Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4 nC @ 10 V | ±20V | 200 pF @ 100 V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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ECH8690-TL-HCOMPLEMENTARY DUAL POWER MOSFET |
2760 | 0.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NTD5862NT4GPOWER FIELD-EFFECT TRANSISTOR, 9 |
3385 | 1.00 |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 98A (Tc) | 10V | 5.7mOhm @ 45A, 10V | 4V @ 250µA | 82 nC @ 10 V | ±20V | 6000 pF @ 25 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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PSMN7R0-100BS,118NEXPERIA PSMN7R0-100BS - 100A, 1 |
2643 | 1.00 |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 6.8mOhm @ 15A, 10V | 4V @ 1mA | 125 nC @ 10 V | ±20V | 6686 pF @ 50 V | - | 269W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |