Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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SP000797380IPA60R190E6XKSA1 - POWER FIELD-E |
2440 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDB33N25TMPOWER FIELD-EFFECT TRANSISTOR, 3 |
2414 | 1.00 |
ДобавитьРасследования |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 33A (Tc) | 10V | 94mOhm @ 16.5A, 10V | 5V @ 250µA | 48 nC @ 10 V | ±30V | 2135 pF @ 25 V | - | 235W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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GT700P08TP-80V, -25A,RD<72M@-10V,VTH-2V~- |
100 | 1.02 |
ДобавитьРасследования |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 25A (Tc) | 10V | 72mOhm @ 2A, 10V | 3.5V @ 250µA | 75 nC @ 10 V | ±20V | 1639 pF @ 40 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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PMPB43XPE,115MOSFET P-CH 20V 5A DFN2020MD-6 |
2751 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 5A (Ta) | 1.8V, 4.5V | 48mOhm @ 5A, 4.5V | 900mV @ 250µA | 23.4 nC @ 4.5 V | ±12V | 1550 pF @ 10 V | - | 1.7W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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FDBL86363-F085MOSFET N-CH 80V 240A 8HPSOF |
2513 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 240A (Tc) | 10V | 2mOhm @ 80A, 10V | 4V @ 250µA | 169 nC @ 10 V | ±20V | 10 pF @ 40 V | - | 357W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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DI030N03D1MOSFET, TO-252AA/D-PAK, 30V, 30A |
2310 | 1.03 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 14mOhm @ 20A, 10V | 2.2V @ 250µA | 17.5 nC @ 10 V | ±20V | 940 pF @ 15 V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDC658PSMALL SIGNAL FIELD-EFFECT TRANSI |
2011 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 10V | 50mOhm @ 4A, 10V | 3V @ 250µA | 12 nC @ 5 V | ±20V | 750 pF @ 15 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDD5680POWER FIELD-EFFECT TRANSISTOR, 3 |
3127 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 8.5A (Ta) | 6V, 10V | 21mOhm @ 8.5A, 10V | 4V @ 250µA | 46 nC @ 10 V | ±20V | 1835 pF @ 30 V | - | 2.8W (Ta), 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPD14N06S2-80IPD14N06 - 55V-60V N-CHANNEL AUT |
3601 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 17A (Tc) | 10V | 80mOhm @ 7A, 10V | 4V @ 14µA | 10 nC @ 10 V | ±20V | 293 pF @ 25 V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDD8870POWER FIELD-EFFECT TRANSISTOR, 2 |
2623 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta), 160A (Tc) | 4.5V, 10V | 3.9mOhm @ 35A, 10V | 2.5V @ 250µA | 118 nC @ 10 V | ±20V | 5160 pF @ 15 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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PSMN3R5-80PSNOW NEXPERIA PSMN3R5-80PS - POWE |
2311 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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AUIRLZ44ZMOSFET N-CH 55V 51A TO220AB |
3686 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 51A (Tc) | 4.5V, 10V | 13.5mOhm @ 31A, 10V | 3V @ 250µA | 36 nC @ 5 V | ±16V | 1620 pF @ 25 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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GT088N06TN60V,RD(MAX)<9M@10V,RD(MAX)<13M@ |
3764 | 1.07 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 4.5V, 10V | 9mOhm @ 14A, 10V | 2.4V @ 250µA | 24 nC @ 10 V | ±20V | 1620 pF @ 30 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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BUK9Y65-100E,115TRANSISTOR >30MHZ |
3500 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 19A (Tc) | 5V | 63.3mOhm @ 5A, 10V | 2.1V @ 1mA | 14 nC @ 5 V | ±10V | 1523 pF @ 25 V | - | 64W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF8788PBFMOSFET N-CH 30V 24A 8SO |
2439 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Ta) | 4.5V, 10V | 2.8mOhm @ 24A, 10V | 2.35V @ 100µA | 66 nC @ 4.5 V | ±20V | 5720 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPW60R099CPAIPW60R099 - 600V-800V N-CHANNEL |
3695 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IPW60R125CP25A, 600V, 0.125OHM, N-CHANNEL M |
3161 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FCH085N80-F155MOSFET N-CH 800V 46A TO247 |
2718 | 1.00 |
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Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 46A (Tc) | 10V | 85mOhm @ 23A, 10V | 4.5V @ 4.6mA | 255 nC @ 10 V | ±20V | 10825 pF @ 100 V | Super Junction | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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AUIRF4905STRLAUIRF4905S - 20V-150V P-CHANNEL |
2107 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 10V | 20mOhm @ 42A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 3500 pF @ 25 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRFR540ZTRLMOSFET N-CH 100V 35A DPAK |
2381 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 10V | 28.5mOhm @ 21A, 10V | 4V @ 50µA | 59 nC @ 10 V | ±20V | 1690 pF @ 25 V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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