Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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FDMS7560SMOSFET N-CH 25V 30A/49A 8PQFN |
2128 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench®, SyncFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 30A (Ta), 49A (Tc) | 4.5V, 10V | 1.45mOhm @ 30A, 10V | 3V @ 1mA | 93 nC @ 10 V | ±20V | 5945 pF @ 13 V | - | 2.5W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFR120NTRRPBFMOSFET N-CH 100V 9.4A DPAK |
2566 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.4A (Tc) | 10V | 210mOhm @ 5.6A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 330 pF @ 25 V | - | 48W (Tc) | - | Surface Mount |
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Таблицы данных |
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IRFR1010ZTRLPBFMOSFET N-CH 55V 42A DPAK |
2446 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 10V | 7.5mOhm @ 42A, 10V | 4V @ 100µA | 95 nC @ 10 V | ±20V | 2840 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFS3006TRLPBFIRFS3006 - HEXFET N-CHANNEL POWE |
2531 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 10V | 2.5mOhm @ 170A, 10V | 4V @ 250µA | 300 nC @ 10 V | ±20V | 8970 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFSL3207ZPBFIRFSL3207 - 12V-300V N-CHANNEL P |
3317 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 4.1mOhm @ 75A, 10V | 4V @ 150µA | 170 nC @ 10 V | ±20V | 6920 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FQB27P06TMPOWER FIELD-EFFECT TRANSISTOR, 2 |
2993 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 27A (Tc) | 10V | 70mOhm @ 13.5A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±25V | 1400 pF @ 25 V | - | 3.75W (Ta), 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDS6676ASSMALL SIGNAL FIELD-EFFECT TRANSI |
3013 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench®, SyncFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 14.5A (Ta) | 4.5V, 10V | 6mOhm @ 14.5A, 10V | 3V @ 1mA | 63 nC @ 10 V | ±20V | 2510 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPP80N06S2-H5IPP80N06 - 55V-60V N-CHANNEL AUT |
2086 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 5.5mOhm @ 80A, 10V | 4V @ 230µA | 155 nC @ 10 V | ±20V | 4400 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FQD5N20LTMPOWER FIELD-EFFECT TRANSISTOR, 3 |
3389 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.8A (Tc) | 5V, 10V | 1.2Ohm @ 1.9A, 10V | 2V @ 250µA | 6.2 nC @ 5 V | ±20V | 325 pF @ 25 V | - | 2.5W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFR4104TRLPBFMOSFET N-CH 40V 42A DPAK |
2691 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 42A (Tc) | 10V | 5.5mOhm @ 42A, 10V | 4V @ 250µA | 89 nC @ 10 V | ±20V | 2950 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FQA70N15POWER FIELD-EFFECT TRANSISTOR, 7 |
3285 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 70A (Tc) | 10V | 28mOhm @ 35A, 10V | 4V @ 250µA | 175 nC @ 10 V | ±25V | 5400 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FDS6679AZPOWER FIELD-EFFECT TRANSISTOR, 1 |
2353 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 4.5V, 10V | 9.3mOhm @ 13A, 10V | 3V @ 250µA | 96 nC @ 10 V | ±25V | 3845 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFSL7787PBFIRFSL7787 - 12V-300V N-CHANNEL P |
3909 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 76A (Tc) | - | 8.4mOhm @ 46A, 10V | 3.7V @ 100µA | 109 nC @ 10 V | ±20V | 4020 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPA65R600E6IPA65R600 - 650V AND 700V COOLMO |
2486 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDMS8670SMOSFET N-CH 30V 20A/42A 8PQFN |
2702 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench®, SyncFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta), 42A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 3V @ 1mA | 73 nC @ 10 V | ±20V | 4000 pF @ 15 V | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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2N7002BK,215SMALL SIGNAL FIELD-EFFECT TRANSI |
2052 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 350mA (Ta) | 10V | 1.6Ohm @ 500mA, 10V | 2.1V @ 250µA | 0.6 nC @ 4.5 V | ±20V | 50 pF @ 10 V | - | 370mW (Ta) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDB2532-F085MOSFET N-CH 150V 79A TO263AB |
2155 | 0.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 79A (Tc) | 6V, 10V | 16mOhm @ 33A, 10V | 4V @ 250µA | 107 nC @ 10 V | ±20V | 5870 pF @ 25 V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFH8337TRPBFMOSFET N-CH 30V 12A/35A PQFN |
2617 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta), 35A (Tc) | 4.5V, 10V | 12.8mOhm @ 16.2A, 10V | 2.35V @ 25µA | 10 nC @ 10 V | ±20V | 790 pF @ 10 V | - | 3.2W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRLR7833TRLPBFMOSFET N-CH 30V 140A DPAK |
2623 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 140A (Tc) | 4.5V, 10V | 4.5mOhm @ 15A, 10V | 2.3V @ 250µA | 50 nC @ 4.5 V | ±20V | 4010 pF @ 15 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDG410NZMOSFET N-CH 20V 2.2A SC88 |
3262 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 2.2A (Ta) | 1.5V, 4.5V | 70mOhm @ 2.2A, 4.5V | 1V @ 250µA | 7.2 nC @ 4.5 V | ±8V | 535 pF @ 10 V | - | 420mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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