Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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FCP099N60EMOSFET N-CH 600V 37A TO220-3 |
2521 | 1.00 |
ДобавитьРасследования |
Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 37A (Tc) | 10V | 99mOhm @ 18.5A, 10V | 3.5V @ 250µA | 114 nC @ 10 V | ±20V | 3465 pF @ 380 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPP80R750P7IPP80R750 - 800V COOLMOS N-CHANN |
3582 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDS5680SMALL SIGNAL FIELD-EFFECT TRANSI |
2349 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 8A (Ta) | 6V, 10V | 20mOhm @ 8A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±20V | 1850 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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PMPB20EN,115MOSFET N-CH 30V 7.2A DFN2020MD-6 |
2997 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 7.2A (Ta) | 4.5V, 10V | 19.5mOhm @ 7A, 10V | 2V @ 250µA | 10.8 nC @ 10 V | ±20V | 435 pF @ 10 V | - | 1.7W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FQA90N15POWER FIELD-EFFECT TRANSISTOR, 9 |
3938 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 90A (Tc) | 10V | 18mOhm @ 45A, 10V | 4V @ 250µA | 285 nC @ 10 V | ±25V | 8700 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FDMC7664POWER FIELD-EFFECT TRANSISTOR, 1 |
2701 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 18.8A (Ta), 24A (Tc) | 4.5V, 10V | 4.2mOhm @ 18.8A, 10V | 3V @ 250µA | 76 nC @ 10 V | ±20V | 4865 pF @ 15 V | - | 2.3W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDS8433AMOSFET P-CH 20V 5A 8SOIC |
3691 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 5A (Ta) | 2.5V, 4.5V | 47mOhm @ 5A, 4.5V | 1V @ 250µA | 28 nC @ 5 V | ±8V | 1130 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMS0302SMOSFET N-CH 30V 29A/49A 8PQFN |
2352 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench®, SyncFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 29A (Ta), 49A (Tc) | 4.5V, 10V | 1.9mOhm @ 28A, 10V | 3V @ 1mA | 109 nC @ 10 V | ±20V | 7350 pF @ 15 V | - | 2.5W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPP045N10N3GPOWER FIELD-EFFECT TRANSISTOR, 1 |
2686 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FQP6N80CPOWER FIELD-EFFECT TRANSISTOR, 5 |
2373 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.5A (Tc) | 10V | 2.5Ohm @ 2.75A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±30V | 1310 pF @ 25 V | - | 158W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRLU7843PBFMOSFET N-CH 30V 161A IPAK |
3806 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 161A (Tc) | - | 3.3mOhm @ 15A, 10V | 2.3V @ 250µA | 50 nC @ 4.5 V | ±20V | 4380 pF @ 15 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPP60R165CP21A, 600V, 0.165OHM, N-CHANNEL M |
3913 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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AUIRF7736M2TRMOSFET N-CH 40V 22A/108A DIRECT |
2145 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 22A (Ta), 108A (Tc) | 10V | 3mOhm @ 65A, 10V | 4V @ 150µA | 108 nC @ 10 V | ±20V | 4267 pF @ 25 V | - | 2.5W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRFB8407MOSFET N-CH 40V 195A TO220AB |
2985 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 2mOhm @ 100A, 10V | 4V @ 150µA | 225 nC @ 10 V | ±20V | 7330 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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BSZ050N03LSGBSZ050N03 - 12V-300V N-CHANNEL P |
2493 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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AUIRLS3036TRLMOSFET N-CH 60V 195A D2PAK |
3507 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 4.5V, 10V | 2.4mOhm @ 165A, 10V | 2.5V @ 250µA | 140 nC @ 4.5 V | ±16V | 11210 pF @ 50 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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HUF75639G3N-CHANNEL ULTRAFET POWER MOSFET |
2058 | 1.00 |
ДобавитьРасследования |
Bulk | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | 4V @ 250µA | 130 nC @ 20 V | ±20V | 2000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FCH060N80-F155MOSFET N-CH 800V 56A TO247 |
3768 | 1.00 |
ДобавитьРасследования |
Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 56A (Tc) | 10V | 60mOhm @ 29A, 10V | 4.5V @ 5.8mA | 350 nC @ 10 V | ±20V | 14685 pF @ 100 V | Super Junction | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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PMPB15XP,115NOW NEXPERIA PMPB15XP - 8.2A, 12 |
2666 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 8.2A (Ta) | 1.8V, 4.5V | 19mOhm @ 8.2A, 4.5V | 900mV @ 250µA | 100 nC @ 4.5 V | ±12V | 2875 pF @ 6 V | - | 1.7W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRF6215MOSFET P-CH 150V 13A TO220AB |
2025 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 13A (Tc) | 10V | 290mOhm @ 6.6A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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