Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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![]() Таблицы данных |
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IRLR3114ZPBFMOSFET N-CH 40V 42A DPAK |
2281 | 1.00 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 42A (Tc) | 4.5V, 10V | 4.9mOhm @ 42A, 10V | 2.5V @ 100µA | 56 nC @ 4.5 V | ±16V | 3810 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRF6724MTRPBFMOSFET N-CH 30V 27A/150A DIRECT |
3407 | 1.00 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 27A (Ta), 150A (Tc) | 4.5V, 10V | 2.5mOhm @ 27A, 10V | 2.35V @ 100µA | 54 nC @ 4.5 V | ±20V | 4404 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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FDD4243POWER FIELD-EFFECT TRANSISTOR, 6 |
2189 | 1.00 |
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Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 6.7A (Ta), 14A (Tc) | 4.5V, 10V | 44mOhm @ 6.7A, 10V | 3V @ 250µA | 29 nC @ 10 V | ±20V | 1550 pF @ 20 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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FDP18N20FPOWER FIELD-EFFECT TRANSISTOR, 1 |
2725 | 1.00 |
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Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 145mOhm @ 9A, 10V | 5V @ 250µA | 26 nC @ 10 V | ±30V | 1180 pF @ 25 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FDMS7698POWER FIELD-EFFECT TRANSISTOR, 1 |
3056 | 1.00 |
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Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.5A (Ta), 22A (Tc) | 4.5V, 10V | 10mOhm @ 13.5A, 10V | 3V @ 250µA | 24 nC @ 10 V | ±20V | 1605 pF @ 15 V | - | 2.5W (Ta), 29W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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FQPF27P06POWER FIELD-EFFECT TRANSISTOR, 1 |
3108 | 1.00 |
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Bulk | QFET® | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 17A (Tc) | - | 70mOhm @ 8.5A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±25V | 1400 pF @ 25 V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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AUIRF4905AUIRF4905 - 20V-150V P-CHANNEL A |
2370 | 1.00 |
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Bulk | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 55 V | 74A (Tc) | 10V | 20mOhm @ 38A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 3400 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() Таблицы данных |
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IPP60R060P7600V, 0.06OHM, N-CHANNEL MOSFET |
2526 | 0.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | |
![]() Таблицы данных |
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MTD3055VLPOWER FIELD-EFFECT TRANSISTOR, 1 |
3520 | 1.00 |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Tc) | 5V | 180mOhm @ 6A, 5V | 2V @ 250µA | 10 nC @ 5 V | ±20V | 570 pF @ 25 V | - | 3.9W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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IRFR1205TRPBFIRFR1205 - 12V-300V N-CHANNEL PO |
2023 | 1.00 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 44A (Tc) | 10V | 27mOhm @ 26A, 10V | 4V @ 250µA | 65 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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FDH047AN08A0MOSFET N-CH 75V 15A TO247-3 |
3553 | 1.00 |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 15A (Tc) | 6V, 10V | 4.7mOhm @ 80A, 10V | 4V @ 250µA | 138 nC @ 10 V | ±20V | 6600 pF @ 25 V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() Таблицы данных |
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IPA057N08N3GIPA057N08 - 12V-300V N-CHANNEL P |
3695 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FQP20N06TSTUMOSFET N-CH 60V 20A TO220-3 |
3819 | 1.00 |
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Bulk | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Tc) | 10V | 60mOhm @ 10A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±25V | 590 pF @ 25 V | - | 53W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() Таблицы данных |
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IPN80R2K0P7IPN80R2K0 - 800V COOLMOS N-CHANN |
2010 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPW65R045C746A, 650V, 0.045OHM, N-CHANNEL M |
2592 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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HUF76629D3STR4885N-CHANNEL LOGIC LEVEL ULTRAFET P |
2930 | 1.00 |
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Bulk | UltraFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 20A (Tc) | 4.5V, 10V | 52mOhm @ 20A, 10V | 3V @ 250µA | 43 nC @ 10 V | ±16V | 1285 pF @ 25 V | - | 150W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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AUIRFS6535TRLMOSFET N-CH 300V 19A D2PAK |
2874 | 1.00 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 19A (Tc) | 10V | 185mOhm @ 11A, 10V | 5V @ 150µA | 57 nC @ 10 V | ±20V | 2340 pF @ 25 V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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TF412T5GSMALL SIGNAL FIELD-EFFECT TRANSI |
3581 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() Таблицы данных |
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CPH3448-TL-WSMALL SIGNAL FIELD-EFFECT TRANSI |
3284 | 1.00 |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 1.8V, 4.5V | 50mOhm @ 2A, 4.5V | - | 4.7 nC @ 4.5 V | ±12V | 430 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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FCH104N60POWER FIELD-EFFECT TRANSISTOR, 3 |
3674 | 1.00 |
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Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 37A (Tc) | 10V | 104mOhm @ 18.5A, 10V | 3.5V @ 250µA | 82 nC @ 10 V | ±20V | 4165 pF @ 380 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |