Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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2SJ657P-CHANNL SILICON MOSFET FOR GENE |
2865 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IRF443MOSFET N-CH 450V 4A TO204AE |
3060 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 4A | - | - | - | - | - | - | - | 75W | - | Through Hole |
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Таблицы данных |
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IRFS4310PBFMOSFET N-CH 100V 130A D2PAK |
2705 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 130A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 250 nC @ 10 V | ±20V | 7670 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFS4610TRLPBFIRFS4610 - 12V-300V N-CHANNEL PO |
2343 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 73A (Tc) | 10V | 14mOhm @ 44A, 10V | 4V @ 100µA | 140 nC @ 10 V | ±20V | 3550 pF @ 50 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPW60R060C7IPW60R060 - 600V COOLMOS N-CHANN |
3604 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IRFS7540TRLPBFMOSFET N-CH 60V 110A D2PAK |
2988 | 0.00 |
ДобавитьРасследования |
Bulk | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 110A (Tc) | 6V, 10V | 5.1mOhm @ 65A, 10V | 3.7V @ 100µA | 130 nC @ 10 V | ±20V | 4555 pF @ 25 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFAE42N-CHANNEL HERMETIC MOS HEXFET |
2131 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| |
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FDMA8051LSMALL SIGNAL FIELD-EFFECT TRANSI |
3688 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 10A (Tc) | 4.5V, 10V | 14mOhm @ 10A, 10V | 3V @ 250µA | 20 nC @ 10 V | ±20V | 1260 pF @ 20 V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDD5670POWER FIELD-EFFECT TRANSISTOR, 2 |
2050 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 52A (Ta) | 6V, 10V | 15mOhm @ 10A, 10V | 4V @ 250µA | 73 nC @ 10 V | ±20V | 2739 pF @ 15 V | - | 3.8W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDP61N20POWER FIELD-EFFECT TRANSISTOR, 6 |
3185 | 1.00 |
ДобавитьРасследования |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 61A (Tc) | 10V | 41mOhm @ 30.5A, 10V | 5V @ 250µA | 75 nC @ 10 V | ±30V | 3380 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPD25N06S2-40ATMA1IPD25N06 - 55V-60V N-CHANNEL AUT |
3775 | 1.00 |
ДобавитьРасследования |
Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 29A (Tc) | 10V | 40mOhm @ 13A, 10V | 4V @ 26µA | 18 nC @ 10 V | ±20V | 513 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRFS4310TRLMOSFET N-CH 100V 75A D2PAK |
3318 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 75A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 250 nC @ 10 V | ±20V | 7670 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRFS4310MOSFET N-CH 100V 75A D2PAK |
3267 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 75A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 250 nC @ 10 V | ±20V | 7670 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPA60R125P6POWER FIELD-EFFECT TRANSISTOR |
2380 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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BUK9Y14-40B,115TRANSISTOR >30MHZ |
2099 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 56A (Tc) | 5V | 11mOhm @ 20A, 10V | 2V @ 1mA | 21 nC @ 5 V | ±15V | 1800 pF @ 25 V | - | 85W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPN50R3K0CESMALL SIGNAL FIELD-EFFECT TRANSI |
3357 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ CE | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.6A (Tc) | 13V | 3Ohm @ 400mA, 13V | 3.5V @ 30µA | 4.3 nC @ 10 V | ±20V | 84 pF @ 100 V | - | 5W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDFM2N111MOSFET N-CH 20V 4A MICROFET |
2487 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 2.5V, 4.5V | 100mOhm @ 4A, 4.5V | 1.5V @ 250µA | 3.8 nC @ 4.5 V | ±12V | 273 pF @ 10 V | Schottky Diode (Isolated) | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FQP15P12MOSFET P-CH 120V 15A TO220-3 |
2362 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | P-Channel | MOSFET (Metal Oxide) | 120 V | 15A (Tc) | 10V | 200mOhm @ 7.5A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FQP44N10POWER MOSFET, N-CHANNEL, QFET, 1 |
2351 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 43.5A (Tc) | 10V | 39mOhm @ 21.75A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±25V | 1800 pF @ 25 V | - | 146W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRLR7821TRPBFMOSFET N-CH 30V 65A DPAK |
2667 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 65A (Tc) | 4.5V, 10V | 10mOhm @ 15A, 10V | 1V @ 250µA | 14 nC @ 4.5 V | ±20V | 1030 pF @ 15 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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