Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IRFR3505PBFMOSFET N-CH 55V 30A DPAK |
2467 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 30A (Tc) | 10V | 13mOhm @ 30A, 10V | 4V @ 250µA | 93 nC @ 10 V | ±20V | 2030 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFS4227TRLPBFIRFS4227 - 12V-300V N-CHANNEL PO |
3702 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 62A (Tc) | 10V | 26mOhm @ 46A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±30V | 4600 pF @ 25 V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPI70R950CEPOWER FIELD-EFFECT TRANSISTOR |
3108 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IPA057N06N3GIPA057N06 - 12V-300V N-CHANNEL P |
2436 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDMS7578MOSFET N-CH 25V 17A/28A 8PQFN |
2855 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 17A (Ta), 28A (Tc) | 4.5V, 10V | 5.8mOhm @ 17A, 10V | 3V @ 250µA | 25 nC @ 10 V | ±20V | 1625 pF @ 13 V | - | 2.5W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDH50N50_F133MOSFET N-CH 500V 48A TO247 |
2969 | 0.00 |
ДобавитьРасследования |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 48A (Tc) | - | 105mOhm @ 24A, 10V | 5V @ 250µA | 137 nC @ 10 V | ±20V | 6460 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDPF770N15APOWER FIELD-EFFECT TRANSISTOR, 1 |
2278 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 10A (Tc) | 10V | 77mOhm @ 10A, 10V | 4V @ 250µA | 11.2 nC @ 10 V | ±20V | 765 pF @ 75 V | - | 21W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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AUIRFZ48ZSMOSFET N-CH 55V 61A D2PAK |
2482 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 61A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±20V | 1720 pF @ 25 V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFR6215TRPBFIRFR6215 - 20V-250V P-CHANNEL PO |
3578 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 13A (Tc) | 10V | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK7Y113-100EXMOSFET N-CH 100V 12A LFPAK56 |
2443 | 1.00 |
ДобавитьРасследования |
Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 12A (Tc) | 10V | 113mOhm @ 5A, 10V | 4V @ 1mA | 10.4 nC @ 10 V | ±20V | 601 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFS4615TRLPBFIRFS4615 - 12V-300V N-CHANNEL PO |
3481 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 33A (Tc) | 10V | 42mOhm @ 21A, 10V | 5V @ 100µA | 40 nC @ 10 V | ±20V | 1750 pF @ 50 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPD80R4K5P7POWER FIELD-EFFECT TRANSISTOR |
2078 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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IPG20N04S4-08IPG20N04 - 20V-40V N-CHANNEL AUT |
3947 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDMC2512SDCPOWER FIELD-EFFECT TRANSISTOR, 3 |
3500 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 32A (Ta), 40A (Tc) | 4.5V, 10V | 2mOhm @ 27A, 10V | 2.5V @ 1mA | 68 nC @ 10 V | ±20V | 4410 pF @ 13 V | - | 3W (Ta), 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFU7540PBFMOSFET N-CH 60V 90A IPAK |
3661 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 6V, 10V | 4.8mOhm @ 66A, 10V | 3.7V @ 100µA | 130 nC @ 10 V | ±20V | 4360 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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BUK962R8-60E,118NOW NEXPERIA BUK962R8-60E - 120A |
3804 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 5V | 2.5mOhm @ 25A, 10V | 2.1V @ 1mA | 92 nC @ 5 V | ±10V | 15600 pF @ 25 V | - | 324W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMS0300SMOSFET N-CH 30V 31A/49A 8PQFN |
2037 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench®, SyncFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 31A (Ta), 49A (Tc) | 4.5V, 10V | 1.8mOhm @ 30A, 10V | 3V @ 1mA | 133 nC @ 10 V | ±20V | 8705 pF @ 15 V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDY100PZSMALL SIGNAL FIELD-EFFECT TRANSI |
2771 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 350mA (Ta) | 1.8V, 4.5V | 1.2Ohm @ 350mA, 4.5V | 1.5V @ 250µA | 1.4 nC @ 4.5 V | ±8V | 100 pF @ 10 V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF2804LPBFIRF2804 - 12V-300V N-CHANNEL POW |
3747 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | - | 2.3mOhm @ 75A, 10V | 4V @ 250µA | 240 nC @ 10 V | - | 6450 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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BUK9Y153-100E,115TRANSISTOR >30MHZ |
2421 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.4A (Tc) | 5V | 146mOhm @ 2A, 10V | 2.1V @ 1mA | 6.8 nC @ 5 V | ±10V | 716 pF @ 25 V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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