Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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BUK9C10-55BIT/A,11MOSFET N-CH 55V 75A D2PAK-7 |
2425 | 0.00 |
ДобавитьРасследования |
Bulk | TrenchPLUS | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Ta) | 4.5V, 10V | 9mOhm @ 10A, 10V | 2V @ 1mA | 51 nC @ 5 V | ±15V | 4667 pF @ 25 V | - | 194W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDP55N06POWER FIELD-EFFECT TRANSISTOR, 5 |
3663 | 1.00 |
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Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 55A (Tc) | 10V | 22mOhm @ 27.5A, 10V | 4V @ 250µA | 37 nC @ 10 V | ±25V | 1510 pF @ 25 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDPF15N65POWER FIELD-EFFECT TRANSISTOR, 1 |
3038 | 1.00 |
ДобавитьРасследования |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 440mOhm @ 7.5A, 10V | 5V @ 250µA | 63 nC @ 10 V | ±30V | 3095 pF @ 25 V | - | 38.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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BS170-D26ZSMALL SIGNAL FIELD-EFFECT TRANSI |
2203 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 500mA (Ta) | 10V | 5Ohm @ 200mA, 10V | 3V @ 1mA | - | ±20V | 40 pF @ 10 V | - | 830mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SP001385054IPP60R120C7XKSA1 - 600V COOLMOS |
3898 | 1.00 |
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Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 120mOhm @ 7.8A, 10V | 4V @ 390µA | 34 nC @ 10 V | ±20V | 1500 pF @ 400 V | - | 92W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPD30N06S2L13ATMA1IPD30N06 - 55V-60V N-CHANNEL AUT |
2885 | 1.00 |
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Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 30A (Tc) | 4.5V, 10V | 13mOhm @ 30A, 10V | 2V @ 80µA | 69 nC @ 10 V | ±20V | 1800 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK9Y6R0-60E,115TRANSISTOR >30MHZ |
2728 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 5V | 5.2mOhm @ 25A, 10V | 2.1V @ 1mA | 39.4 nC @ 5 V | ±10V | 6319 pF @ 25 V | - | 195W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPW60R190E6600V, 0.19OHM, N-CHANNEL MOSFET |
2986 | 0.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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Таблицы данных |
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IRLR3636TRPBFIRLR3636 - 12V-300V N-CHANNEL PO |
2745 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 6.8mOhm @ 50A, 10V | 2.5V @ 100µA | 49 nC @ 4.5 V | ±16V | 3779 pF @ 50 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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PMV50EPEARPMV50EPEA - 30 V, P-CHANNEL TREN |
2766 | 1.00 |
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Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 4.2A (Ta) | 4.5V, 10V | 45mOhm @ 4.2A, 10V | 3V @ 250µA | 19.2 nC @ 10 V | ±20V | 793 pF @ 15 V | - | 310mW (Ta), 455mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK7Y20-30B,115MOSFET N-CH 30V 39.5A LFPAK56 |
3598 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 39.5A (Tc) | 10V | 20mOhm @ 20A, 10V | 4V @ 1mA | 11.2 nC @ 10 V | ±20V | 688 pF @ 25 V | - | 59W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FCH067N65S3-F155POWER FIELD-EFFECT TRANSISTOR, N |
3690 | 0.00 |
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Bulk | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 44A (Tc) | 10V | 67mOhm @ 22A, 10V | 4.5V @ 4.4mA | 78 nC @ 10 V | ±30V | 3090 pF @ 400 V | Super Junction | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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PSMN5R3-25MLDXPSMN5R3-25MLD - N-CHANNEL 25V, L |
3656 | 1.00 |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 70A (Tc) | 4.5V, 10V | 5.9mOhm @ 15A, 10V | 2.2V @ 1mA | 12.7 nC @ 10 V | ±20V | 858 pF @ 12 V | Schottky Diode (Body) | 51W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK954R8-60E,127MOSFET N-CH 60V 100A TO220AB |
3210 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 5V, 10V | 4.5mOhm @ 25A, 10V | 2.1V @ 1mA | 65 nC @ 5 V | ±10V | 9710 pF @ 25 V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPW60R165CP21A, 600V, 0.165OHM, N-CHANNEL M |
3083 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FQU2N60CTUPOWER FIELD-EFFECT TRANSISTOR, 1 |
3784 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.9A (Tc) | 10V | 4.7Ohm @ 950mA, 10V | 4V @ 250µA | 12 nC @ 10 V | ±30V | 235 pF @ 25 V | - | 2.5W (Ta), 44W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDD3670POWER FIELD-EFFECT TRANSISTOR, 3 |
3669 | 1.00 |
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Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 34A (Ta) | 6V, 10V | 32mOhm @ 7.3A, 10V | 4V @ 250µA | 80 nC @ 10 V | ±20V | 2490 pF @ 50 V | - | 3.8W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDD850N10LPOWER FIELD-EFFECT TRANSISTOR, 1 |
2996 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 15.7A (Tc) | 5V, 10V | 75mOhm @ 12A, 10V | 2.5V @ 250µA | 28.9 nC @ 10 V | ±20V | 1465 pF @ 25 V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFM120ATFPOWER FIELD-EFFECT TRANSISTOR, 2 |
3973 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 2.3A (Ta) | 10V | 200mOhm @ 1.15A, 10V | 4V @ 250µA | 22 nC @ 10 V | ±20V | 480 pF @ 25 V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPD12CN10NGOPTLMOS N-CHANNEL POWER MOSFET |
2877 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
Запрос котировок
