Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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APTM120DA30CT1GMOSFET N-CH 1200V 31A SP1 |
2969 | 84.28 |
ДобавитьРасследования |
Bulk | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 31A (Tc) | 10V | 360mOhm @ 25A, 10V | 5V @ 2.5mA | 560 nC @ 10 V | ±30V | 14560 pF @ 25 V | - | 657W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT30M19JVFRMOSFET N-CH 300V 130A ISOTOP |
2079 | 84.50 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 130A (Tc) | 10V | 19mOhm @ 500mA, 10V | 4V @ 5mA | 975 nC @ 10 V | ±30V | 21600 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT8015JVFRMOSFET N-CH 800V 44A ISOTOP |
3487 | 85.15 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 44A (Tc) | - | 150mOhm @ 500mA, 10V | 4V @ 5mA | 285 nC @ 10 V | - | 17650 pF @ 25 V | - | - | - | Chassis Mount |
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Таблицы данных |
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IXTF1R4N450MOSFET N-CH 4500V 1.4A I4PAC |
2225 | 85.96 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 4500 V | 1.4A (Tc) | 10V | 40Ohm @ 50mA, 10V | 6V @ 250µA | 88 nC @ 10 V | ±20V | 3300 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT10025JVRMOSFET N-CH 1000V 34A ISOTOP |
3198 | 86.50 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 34A (Tc) | - | 250mOhm @ 500mA, 10V | 4V @ 5mA | 990 nC @ 10 V | - | 18000 pF @ 25 V | - | - | - | Chassis Mount |
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Таблицы данных |
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APL602JMOSFET N-CH 600V 43A ISOTOP |
3531 | 89.29 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 43A (Tc) | 12V | 125mOhm @ 21.5A, 12V | 4V @ 2.5mA | - | ±30V | 9000 pF @ 25 V | - | 565W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT10025JVFRMOSFET N-CH 1000V 34A ISOTOP |
2059 | 91.71 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 34A (Tc) | - | 250mOhm @ 500mA, 10V | 4V @ 5mA | 990 nC @ 10 V | - | 18000 pF @ 25 V | - | - | - | Chassis Mount |
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Таблицы данных |
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APTC60SKM24CT1GMOSFET N-CH 600V 95A SP1 |
3704 | 91.96 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 95A (Tc) | 10V | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300 nC @ 10 V | ±20V | 14400 pF @ 25 V | Super Junction | 462W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT8011JLLMOSFET N-CH 800V 51A ISOTOP |
2343 | 92.39 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 51A (Tc) | - | 110mOhm @ 25.5A, 10V | 5V @ 5mA | 650 nC @ 10 V | - | 9480 pF @ 25 V | - | - | - | Chassis Mount |
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Таблицы данных |
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APT60M60JLLMOSFET N-CH 600V 70A ISOTOP |
2602 | 94.75 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 60mOhm @ 35A, 10V | 5V @ 5mA | 289 nC @ 10 V | ±30V | 12630 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT50M38JFLLMOSFET N-CH 500V 88A ISOTOP |
3980 | 94.95 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 88A (Tc) | - | 38mOhm @ 44A, 10V | 5V @ 5mA | 270 nC @ 10 V | - | 12000 pF @ 25 V | - | - | - | Chassis Mount |
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Таблицы данных |
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APT10026JLLMOSFET N-CH 1000V 30A ISOTOP |
2097 | 97.46 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 30A (Tc) | - | 260mOhm @ 15A, 10V | 5V @ 5mA | 267 nC @ 10 V | - | 7114 pF @ 25 V | - | - | - | Chassis Mount |
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Таблицы данных |
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APT8011JFLLMOSFET N-CH 800V 51A ISOTOP |
2543 | 97.94 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 51A (Tc) | - | 125mOhm @ 25.5A, 10V | 5V @ 5mA | 650 nC @ 10 V | - | 9480 pF @ 25 V | - | - | - | Chassis Mount |
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Таблицы данных |
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APT10021JLLMOSFET N-CH 1000V 37A ISOTOP |
2424 | 99.23 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 37A (Tc) | 10V | 210mOhm @ 18.5A, 10V | 5V @ 5mA | 395 nC @ 10 V | ±30V | 9750 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT10026JFLLMOSFET N-CH 1000V 30A ISOTOP |
2492 | 99.41 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 30A (Tc) | - | 260mOhm @ 15A, 10V | 5V @ 5mA | 267 nC @ 10 V | - | 7114 pF @ 25 V | - | - | - | Chassis Mount |
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MCB60I1200TZ-TUBSICFET N-CH 1.2KV 90A TO268AA |
3187 | 108.72 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 90A (Tc) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 160 nC @ 20 V | +20V, -5V | 2790 pF @ 1000 V | - | - | -40°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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APT12031JFLLMOSFET N-CH 1200V 30A ISOTOP |
2458 | 122.89 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 30A (Tc) | 10V | 330mOhm @ 15A, 10V | 5V @ 5mA | 365 nC @ 10 V | ±30V | 9480 pF @ 25 V | - | 690AW (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APTM100DA18TGMOSFET N-CH 1000V 43A SP4 |
2732 | 124.01 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 43A (Tc) | 10V | 210mOhm @ 21.5A, 10V | 5V @ 5mA | 372 nC @ 10 V | ±30V | 10400 pF @ 25 V | - | 780W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APTM20SKM08TGMOSFET N-CH 200V 208A SP4 |
2283 | 125.37 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 208A (Tc) | 10V | 10mOhm @ 104A, 10V | 5V @ 5mA | 280 nC @ 10 V | ±30V | 14400 pF @ 25 V | - | 781W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APTM20DAM08TGMOSFET N-CH 200V 208A SP4 |
3222 | 125.38 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 208A (Tc) | 10V | 10mOhm @ 104A, 10V | 5V @ 5mA | 280 nC @ 10 V | ±30V | 14400 pF @ 25 V | - | 781W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
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