Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
|
BSS138N-CHANNEL ENHANCEMENT MODE MOSFE |
3499 | 0.18 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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BSS84P-CHANNEL ENHANCEMENT MODE MOSFE |
3399 | 0.20 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
|
AS2302N-CHANNEL ENHANCEMENT MODE MOSFE |
2498 | 0.20 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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2N7002WN-CH MOSFET 60V 0.34A SOT-323 |
2293 | 0.29 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 340mA (Ta) | 4.5V, 10V | 2.5Ohm @ 300mA, 10V | 2.5V @ 250µA | 1.6 nC @ 10 V | ±30V | 27.5 pF @ 30 V | - | 150mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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YJL2102WN-CH MOSFET 20V 3A SOT-323 |
3972 | 0.29 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 2.5V, 4.5V | 70mOhm @ 2.5A, 4.5V | 1.1V @ 250µA | 3.61 nC @ 4.5 V | ±10V | 220 pF @ 10 V | - | 250mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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APT60M75JLLMOSFET N-CH 600V 58A ISOTOP |
2982 | 69.85 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 58A (Tc) | 10V | 75mOhm @ 29A, 10V | 5V @ 5mA | 195 nC @ 10 V | ±30V | 8930 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
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APT12057JFLLMOSFET N-CH 1200V 19A ISOTOP |
2992 | 69.87 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 19A (Tc) | - | 570mOhm @ 9.5A, 10V | 5V @ 2.5mA | 185 nC @ 10 V | - | 5155 pF @ 25 V | - | - | - | Chassis Mount |
|
Таблицы данных |
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IXTX6N200P3HVMOSFET N-CH 2000V 6A TO247PLUSHV |
2016 | 69.96 |
ДобавитьРасследования |
Tube | Polar P3™ | Active | N-Channel | MOSFET (Metal Oxide) | 2000 V | 6A (Tc) | 10V | 4Ohm @ 3A, 10V | 5V @ 250µA | 143 nC @ 10 V | ±20V | 3700 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
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APTM120DA30T1GMOSFET N-CH 1200V 31A SP1 |
3101 | 70.11 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 31A (Tc) | 10V | 360mOhm @ 25A, 10V | 5V @ 2.5mA | 560 nC @ 10 V | ±30V | 14560 pF @ 25 V | - | 657W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
| |
|
IXTK3N250LMOSFET N-CH 2500V 3A TO264 |
3458 | 70.23 |
ДобавитьРасследования |
Tube | Linear | Active | N-Channel | MOSFET (Metal Oxide) | 2500 V | 3A (Tc) | 10V | 10Ohm @ 1.5A, 10V | 5V @ 1mA | 230 nC @ 10 V | ±20V | 5400 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
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IXFN32N120PMOSFET N-CH 1200V 32A SOT-227B |
3987 | 70.61 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 32A (Tc) | 10V | 310mOhm @ 500mA, 10V | 6.5V @ 1mA | 360 nC @ 10 V | ±30V | 21000 pF @ 25 V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
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APT20M11JLLMOSFET N-CH 200V 176A ISOTOP |
3562 | 70.74 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 176A (Tc) | - | 11mOhm @ 88A, 10V | 5V @ 5mA | 180 nC @ 10 V | - | 10320 pF @ 25 V | - | - | - | Chassis Mount |
|
Таблицы данных |
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APTC60SKM24T1GMOSFET N-CH 600V 95A SP1 |
3848 | 71.49 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 95A (Tc) | 10V | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300 nC @ 10 V | ±20V | 14400 pF @ 25 V | - | 462W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
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APT20M11JVRMOSFET N-CH 200V 175A ISOTOP |
2556 | 72.34 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 175A (Tc) | 10V | 11mOhm @ 500mA, 10V | 4V @ 5mA | 180 nC @ 10 V | ±30V | 21600 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
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APT30M19JVRMOSFET N-CH 300V 130A ISOTOP |
3235 | 74.51 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 130A (Tc) | 10V | 19mOhm @ 500mA, 10V | 4V @ 5mA | 975 nC @ 10 V | ±30V | 21600 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
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APT10026L2FLLGMOSFET N-CH 1000V 38A 264 MAX |
2506 | 77.77 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 38A (Tc) | - | 260mOhm @ 19A, 10V | 5V @ 5mA | 267 nC @ 10 V | - | 7114 pF @ 25 V | - | - | - | Through Hole |
|
Таблицы данных |
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APT20M11JFLLMOSFET N-CH 200V 176A ISOTOP |
2824 | 79.35 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 176A (Tc) | - | 11mOhm @ 88A, 10V | 5V @ 5mA | 180 nC @ 10 V | - | 10320 pF @ 25 V | - | - | - | Chassis Mount |
|
Таблицы данных |
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APT8015JVRMOSFET N-CH 800V 44A ISOTOP |
2604 | 80.36 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 44A (Tc) | - | 150mOhm @ 500mA, 10V | 4V @ 5mA | 285 nC @ 10 V | - | 17650 pF @ 25 V | - | - | - | Chassis Mount |
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Таблицы данных |
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APT20M11JVFRMOSFET N-CH 200V 175A ISOTOP |
2547 | 82.03 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 175A (Tc) | 10V | 11mOhm @ 500mA, 10V | 4V @ 5mA | 180 nC @ 10 V | ±30V | 21600 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
|
APT60M75JVRMOSFET N-CH 600V 62A ISOTOP |
2922 | 82.35 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 62A (Tc) | 10V | 75mOhm @ 500mA, 10V | 4V @ 5mA | 1050 nC @ 10 V | ±30V | 19800 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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