Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IXFN320N17T2MOSFET N-CH 170V 260A SOT227B |
2916 | 45.64 |
ДобавитьРасследования |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 170 V | 260A (Tc) | 10V | 5.2mOhm @ 60A, 10V | 5V @ 8mA | 640 nC @ 10 V | ±20V | 45000 pF @ 25 V | - | 1070W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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MMIX1F360N15T2MOSFET N-CH 150V 235A 24SMPD |
2224 | 45.83 |
ДобавитьРасследования |
Tube | GigaMOS™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 235A (Tc) | 10V | 4.4mOhm @ 100A, 10V | 5V @ 8mA | 715 nC @ 10 V | ±20V | 47500 pF @ 25 V | - | 680W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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APT50M85JVFRMOSFET N-CH 500V 50A ISOTOP |
2370 | 46.07 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 50A (Tc) | - | 85mOhm @ 500mA, 10V | 4V @ 1mA | 535 nC @ 10 V | - | 10800 pF @ 25 V | - | - | - | Chassis Mount |
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Таблицы данных |
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APT8014L2FLLGMOSFET N-CH 800V 52A 264 MAX |
3180 | 46.19 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 52A (Tc) | - | 160mOhm @ 26A, 10V | 5V @ 5mA | 285 nC @ 10 V | - | 7238 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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APT10035JFLLMOSFET N-CH 1000V 25A ISOTOP |
2789 | 46.39 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 25A (Tc) | - | 370mOhm @ 14A, 10V | 5V @ 2.5mA | 186 nC @ 10 V | - | 5185 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT50M75JFLLMOSFET N-CH 500V 51A ISOTOP |
2407 | 46.56 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 51A (Tc) | - | 75mOhm @ 25.5A, 10V | 5V @ 2.5mA | 125 nC @ 10 V | - | 5590 pF @ 25 V | - | - | - | Chassis Mount |
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Таблицы данных |
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IXTK20N150MOSFET N-CH 1500V 20A TO264 |
3665 | 47.12 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 20A (Tc) | 10V | 1Ohm @ 10A, 10V | 4.5V @ 1mA | 215 nC @ 10 V | ±30V | 7800 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN210N30P3MOSFET N-CH 300V 192A SOT227B |
3106 | 47.26 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 192A (Tc) | 10V | 14.5mOhm @ 105A, 10V | 5V @ 8mA | 268 nC @ 10 V | ±20V | 16200 pF @ 25 V | - | 1500W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT19M120JMOSFET N-CH 1200V 19A ISOTOP |
2533 | 47.31 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 19A (Tc) | 10V | 530mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | ±30V | 9670 pF @ 25 V | - | 545W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
| |
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MMIX1F210N30P3MOSFET N-CH 300V 108A 24SMPD |
3349 | 47.47 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 108A (Tc) | - | 16mOhm @ 105A, 10V | 5V @ 8mA | - | - | 16200 pF @ 25 V | - | - | - | Surface Mount |
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S2M0025120DMOSFET SILICON CARBIDE SIC 1200V |
3143 | 46.13 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 63A (Tj) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 130 nC @ 20 V | +25V, -10V | 4402 pF @ 1000 V | - | 446W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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S2M0025120KMOSFET SILICON CARBIDE SIC 1200V |
3671 | 46.51 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 63A (Tc) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 130 nC @ 20 V | +25V, -10V | 4402 pF @ 1000 V | - | 446W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN38N100Q2MOSFET N-CH 1000V 38A SOT-227 |
2925 | 48.34 |
ДобавитьРасследования |
Tube | HiPerFET™, Q2 Class | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 1000 V | 38A (Tc) | 10V | 250mOhm @ 19A, 10V | 5V @ 8mA | 250 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFN180N20MOSFET N-CH 200V 180A SOT-227B |
3610 | 50.00 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 200 V | 180A (Tc) | 10V | 10mOhm @ 500mA, 10V | 4V @ 8mA | 660 nC @ 10 V | ±20V | 22000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT8014L2LLGMOSFET N-CH 800V 52A 264 MAX |
3278 | 50.04 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 52A (Tc) | - | 140mOhm @ 26A, 10V | 5V @ 5mA | 285 nC @ 10 V | - | 7238 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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IXFN44N80MOSFET N-CH 800V 44A SOT-227B |
3557 | 50.14 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 800 V | 44A (Tc) | 10V | 165mOhm @ 500mA, 10V | 4.5V @ 8mA | 380 nC @ 10 V | ±20V | 10000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT6017JFLLMOSFET N-CH 600V 31A ISOTOP |
3953 | 50.41 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 31A (Tc) | - | 170mOhm @ 15.5A, 10V | 5V @ 2.5mA | 100 nC @ 10 V | - | 4500 pF @ 25 V | - | - | - | Chassis Mount |
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Таблицы данных |
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APT12080JVFRMOSFET N-CH 1200V 15A ISOTOP |
3095 | 50.53 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 15A (Tc) | - | 800mOhm @ 7.5A, 10V | 4V @ 2.5mA | 485 nC @ 10 V | - | 7800 pF @ 25 V | - | - | - | Chassis Mount |
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Таблицы данных |
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IXFN26N100PMOSFET N-CH 1000V 23A SOT-227B |
3617 | 50.75 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 23A (Tc) | 10V | 390mOhm @ 13A, 10V | 6.5V @ 1mA | 197 nC @ 10 V | ±30V | 11900 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT6010JFLLMOSFET N-CH 600V 47A ISOTOP |
2798 | 50.80 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | - | 100mOhm @ 23.5A, 10V | 5V @ 2.5mA | 150 nC @ 10 V | - | 6710 pF @ 25 V | - | - | - | Chassis Mount |
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