Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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APT10035JLLMOSFET N-CH 1000V 25A ISOTOP |
3139 | 50.83 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 25A (Tc) | 10V | 350mOhm @ 14A, 10V | 5V @ 2.5mA | 186 nC @ 10 V | ±30V | 5185 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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MMIX1F132N50P3MOSFET N-CH 500V 63A 24SMPD |
3303 | 50.88 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 63A (Tc) | 10V | 43mOhm @ 66A, 10V | 5V @ 8mA | 250 nC @ 10 V | ±30V | 18600 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFN39N90MOSFET N-CH 900V 39A SOT-227B |
3097 | 50.98 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 900 V | 39A (Tc) | 10V | 220mOhm @ 500mA, 10V | 5V @ 8mA | 390 nC @ 10 V | ±20V | 9200 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT100M50JMOSFET N-CH 500V 103A SOT227 |
3576 | 51.20 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 103A (Tc) | 10V | 38mOhm @ 75A, 10V | 5V @ 5mA | 620 nC @ 10 V | ±30V | 24600 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFL32N120PMOSFET N-CH 1200V 24A I5PAK |
2589 | 51.43 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 24A (Tc) | 10V | 340mOhm @ 16A, 10V | 6.5V @ 1mA | 360 nC @ 10 V | ±30V | 21000 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
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APT30M36JLLMOSFET N-CH 300V 76A ISOTOP |
2216 | 51.48 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 76A (Tc) | - | 36mOhm @ 38A, 10V | 5V @ 2.5mA | 115 nC @ 10 V | - | 6480 pF @ 25 V | - | - | - | Chassis Mount |
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Таблицы данных |
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IXFN26N120PMOSFET N-CH 1200V 23A SOT-227B |
3312 | 51.67 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 23A (Tc) | 10V | 460mOhm @ 13A, 10V | 6.5V @ 1mA | 225 nC @ 10 V | ±30V | 14000 pF @ 25 V | - | 695W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFN230N10MOSFET N-CH 100V 230A SOT-227B |
3914 | 51.75 |
ДобавитьРасследования |
Tube | - | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 230A (Tc) | 10V | 6mOhm @ 500mA, 10V | 4V @ 8mA | 570 nC @ 10 V | ±20V | 19000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
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APT60M75L2FLLGMOSFET N-CH 600V 73A 264 MAX |
3632 | 52.55 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 73A (Tc) | 10V | 75mOhm @ 36.5A, 10V | 5V @ 5mA | 195 nC @ 10 V | ±30V | 8930 pF @ 25 V | - | 893W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
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APT60M75L2LLGMOSFET N-CH 600V 73A 264 MAX |
2418 | 52.55 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 73A (Tc) | 10V | 75mOhm @ 36.5A, 10V | 5V @ 5mA | 195 nC @ 10 V | ±30V | 8930 pF @ 25 V | - | 893W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STE70NM60MOSFET N-CH 600V 70A ISOTOP |
3197 | 53.38 |
ДобавитьРасследования |
Tube | MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 55mOhm @ 30A, 10V | 5V @ 250µA | 266 nC @ 10 V | ±30V | 7300 pF @ 25 V | - | 600W (Tc) | 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
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MMIX1F44N100Q3MOSFET N-CH 1000V 30A 24SMPD |
2729 | 53.68 |
ДобавитьРасследования |
Tube | HiPerFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 30A (Tc) | 10V | 245mOhm @ 22A, 10V | 6.5V @ 8mA | 264 nC @ 10 V | ±30V | 13600 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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IXTN5N250MOSFET N-CH 2500V 5A SOT227B |
2052 | 54.16 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 2500 V | 5A (Tc) | 10V | 8.8Ohm @ 2.5A, 10V | 5V @ 1mA | 200 nC @ 10 V | ±30V | 8560 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
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APTM100SK33T1GMOSFET N-CH 1000V 23A SP1 |
2076 | 54.65 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 23A (Tc) | 10V | 396mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 7868 pF @ 25 V | - | 390W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXTT12N150HVMOSFET N-CH 1500V 12A TO268 |
2223 | 55.06 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 12A (Tc) | 10V | - | 4.5V @ 250µA | 106 nC @ 10 V | ±30V | 3720 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT32F120JMOSFET N-CH 1200V 33A ISOTOP |
2888 | 55.35 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 33A (Tc) | 10V | 320mOhm @ 25A, 10V | 5V @ 2.5mA | 560 nC @ 10 V | ±30V | 18200 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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MMIX1F40N110PMOSFET N-CH 1100V 24A 24SMPD |
3769 | 56.16 |
ДобавитьРасследования |
Tube | HiPerFET™, PolarP2™ | Active | N-Channel | MOSFET (Metal Oxide) | 1100 V | 24A (Tc) | 10V | 290mOhm @ 20A, 10V | 6.5V @ 1mA | 310 nC @ 10 V | ±30V | 19000 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTB30N100LMOSFET N-CH 1000V 30A PLUS264 |
2182 | 56.19 |
ДобавитьРасследования |
Tube | Linear | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 30A (Tc) | 20V | 450mOhm @ 500mA, 20V | 5V @ 250µA | 545 nC @ 20 V | ±30V | 13200 pF @ 25 V | - | 800W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
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IXTF2N300P3MOSFET N-CH 3000V 1.6A I4PAC |
3601 | 56.71 |
ДобавитьРасследования |
Tube | Polar P3™ | Active | N-Channel | MOSFET (Metal Oxide) | 3000 V | 1.6A (Tc) | 10V | 21Ohm @ 1A, 10V | 5V @ 250µA | 73 nC @ 10 V | ±20V | 1890 pF @ 25 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
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APL502B2GMOSFET N-CH 500V 58A T-MAX |
3459 | 57.19 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 15V | 90mOhm @ 29A, 12V | 4V @ 2.5mA | - | ±30V | 9000 pF @ 25 V | - | 730W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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