Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APTM10UM01FAG

Таблицы данных

APTM10UM01FAG

APTM10UM01FAG

MOSFET N-CH 100V 860A SP6

Microchip Technology

2074 362.70
- +

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Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 860A (Tc) 10V 1.6mOhm @ 275A, 10V 4V @ 12mA 2100 nC @ 10 V ±30V 60000 pF @ 25 V - 2500W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM100UM60FAG

Таблицы данных

APTM100UM60FAG

APTM100UM60FAG

MOSFET N-CH 1000V 129A SP6

Microchip Technology

3566 383.21
- +

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Bulk - Active N-Channel MOSFET (Metal Oxide) 1000 V 129A (Tc) 10V 70mOhm @ 64.5A, 10V 5V @ 15mA 1116 nC @ 10 V ±30V 31100 pF @ 25 V - 2272W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM120UM70DAG

Таблицы данных

APTM120UM70DAG

APTM120UM70DAG

MOSFET N-CH 1200V 171A SP6

Microchip Technology

3609 418.12
- +

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Расследования

Bulk - Active N-Channel MOSFET (Metal Oxide) 1200 V 171A (Tc) 10V 80mOhm @ 85.5A, 10V 5V @ 30mA 1650 nC @ 10 V ±30V 43500 pF @ 25 V - 5000W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM120U10SCAVG

Таблицы данных

APTM120U10SCAVG

APTM120U10SCAVG

MOSFET N-CH 1200V 116A SP6

Microchip Technology

3348 425.56
- +

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Bulk POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 116A (Tc) 10V 120mOhm @ 58A, 10V 5V @ 20mA 1100 nC @ 10 V ±30V 28900 pF @ 25 V - 3290W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM50UM09FAG

Таблицы данных

APTM50UM09FAG

APTM50UM09FAG

MOSFET N-CH 500V 497A SP6

Microchip Technology

3913 433.80
- +

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Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 497A (Tc) 10V 10mOhm @ 248.5A, 10V 5V @ 30mA 1200 nC @ 10 V ±30V 63300 pF @ 25 V - 5000W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM100UM65SCAVG

Таблицы данных

APTM100UM65SCAVG

APTM100UM65SCAVG

MOSFET N-CH 1000V 145A SP6

Microchip Technology

3523 456.36
- +

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Bulk POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 145A (Tc) 10V 78mOhm @ 72.5A, 10V 5V @ 20mA 1068 nC @ 10 V ±30V 28500 pF @ 25 V - 3250W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM100UM45FAG

Таблицы данных

APTM100UM45FAG

APTM100UM45FAG

MOSFET N-CH 1000V 215A SP6

Microchip Technology

3873 461.70
- +

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Bulk - Active N-Channel MOSFET (Metal Oxide) 1000 V 215A (Tc) 10V 52mOhm @ 107.5A, 10V 5V @ 30mA 1602 nC @ 10 V ±30V 42700 pF @ 25 V - 5000W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM120UM70FAG

Таблицы данных

APTM120UM70FAG

APTM120UM70FAG

MOSFET N-CH 1200V 171A SP6

Microchip Technology

2795 490.38
- +

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Расследования

Bulk - Active N-Channel MOSFET (Metal Oxide) 1200 V 171A (Tc) 10V 80mOhm @ 85.5A, 10V 5V @ 30mA 1650 nC @ 10 V ±30V 43500 pF @ 25 V - 5000W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
GA50JT06-258

Таблицы данных

GA50JT06-258

GA50JT06-258

TRANS SJT 600V 100A TO258

GeneSiC Semiconductor

2358 693.00
- +

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Bulk - Active - SiC (Silicon Carbide Junction Transistor) 600 V 100A (Tc) - 25mOhm @ 50A - - - - - 769W (Tc) -55°C ~ 225°C (TJ) Through Hole
BSS123

Таблицы данных

BSS123

BSS123

N-CHANNEL ENHANCEMENT MODE MOSFE

ANBON SEMICONDUCTOR (INT'L) LIMITED

3404 0.15
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® * Active - - - - - - - - - - - - - -
YJL3134K

Таблицы данных

YJL3134K

YJL3134K

N-CH MOSFET 20V 0.9A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd

3946 0.29
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 20 V 900mA (Ta) 1.8V, 4.5V 260mOhm @ 500mA, 4.5V 1.1V @ 250µA 1 nC @ 4.5 V ±12V 56 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJL2312A

Таблицы данных

YJL2312A

YJL2312A

N-CH MOSFET 20V 6.8A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd

3519 0.29
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 20 V 6.8A (Ta) 1.8V, 4.5V 18mOhm @ 6.8A, 4.5V 1V @ 250µA 11.05 nC @ 4.5 V ±10V 888 pF @ 10 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJL2101W

Таблицы данных

YJL2101W

YJL2101W

P-CH MOSFET 20V 2A SOT-323

Yangzhou Yangjie Electronic Technology Co.,Ltd

3755 0.29
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.8V, 4.5V 130mOhm @ 1.5A, 4.5V 1V @ 250µA 4.5 nC @ 4.5 V ±10V 327 pF @ 10 V - 250mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS123

Таблицы данных

BSS123

BSS123

N-CH MOSFET 100V 0.2A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd

2220 0.29
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 100 V 200mA (Ta) 4.5V, 10V 5Ohm @ 200mA, 10V 3V @ 250µA 2.5 nC @ 10 V ±20V 14 pF @ 50 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJL2304A

Таблицы данных

YJL2304A

YJL2304A

N-CH MOSFET 30V 3.6A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd

3833 0.29
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 30 V 3.6A (Ta) 4.5V, 10V 39mOhm @ 3.6A, 10V 2.5V @ 250µA 4.2 nC @ 10 V ±20V 520 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
YJL2302B

Таблицы данных

YJL2302B

YJL2302B

N-CH MOSFET 20V 3A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd

2504 0.29
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 2.5V, 4.5V 52mOhm @ 3A, 4.5V 1.1V @ 250µA 2.9 nC @ 4.5 V ±10V 280 pF @ 10 V - 700mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7002KW

Таблицы данных

2N7002KW

2N7002KW

N-CH MOSFET 60V 0.34A SOT-323

Yangzhou Yangjie Electronic Technology Co.,Ltd

3024 0.29
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 60 V 340mA (Ta) 4.5V, 10V 2.5Ohm @ 300mA, 10V 2.5V @ 250µA 2.4 nC @ 10 V ±20V 30 pF @ 30 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7002A

Таблицы данных

2N7002A

2N7002A

N-CH MOSFET 60V 0.34A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd

3607 0.29
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 60 V 340mA (Ta) 4.5V, 10V 2.5Ohm @ 300mA, 10V 2.5V @ 250µA 1.6 nC @ 10 V ±30V 27.5 pF @ 30 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
AS2312

Таблицы данных

AS2312

AS2312

N-CHANNEL ENHANCEMENT MODE MOSFE

ANBON SEMICONDUCTOR (INT'L) LIMITED

2962 0.30
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® * Active - - - - - - - - - - - - - -
AS3400

Таблицы данных

AS3400

AS3400

N-CHANNEL ENHANCEMENT MODE MOSFE

ANBON SEMICONDUCTOR (INT'L) LIMITED

3988 0.30
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® * Active - - - - - - - - - - - - - -
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