Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
|
IXFN30N120PMOSFET N-CH 1200V 30A SOT-227B |
2495 | 58.16 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 30A (Tc) | 10V | 350mOhm @ 500mA, 10V | 6.5V @ 1mA | 310 nC @ 10 V | ±30V | 19000 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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VMO60-05FMOSFET N-CH 500V 60A TO240AA |
2096 | 58.77 |
ДобавитьРасследования |
Box | HiPerFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 60A (Tc) | 10V | 75mOhm @ 500mA, 10V | 4V @ 24mA | 405 nC @ 10 V | ±20V | 12600 pF @ 25 V | - | 590W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFN100N50Q3MOSFET N-CH 500V 82A SOT227B |
2997 | 58.93 |
ДобавитьРасследования |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 82A (Tc) | 10V | 49mOhm @ 50A, 10V | 6.5V @ 8mA | 255 nC @ 10 V | ±30V | 13800 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFN62N80Q3MOSFET N-CH 800V 49A SOT227B |
2697 | 58.93 |
ДобавитьРасследования |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 49A (Tc) | 10V | 140mOhm @ 31A, 10V | 6.5V @ 8mA | 270 nC @ 10 V | ±30V | 13600 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APL602B2GMOSFET N-CH 600V 49A T-MAX |
2494 | 59.06 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 49A (Tc) | 12V | 125mOhm @ 24.5A, 12V | 4V @ 2.5mA | - | ±30V | 9000 pF @ 25 V | - | 730W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT10M11JVFRMOSFET N-CH 100V 144A ISOTOP |
2379 | 59.14 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 144A (Tc) | - | 11mOhm @ 500mA, 10V | 4V @ 2.5mA | 450 nC @ 10 V | - | 10380 pF @ 25 V | - | - | - | Chassis Mount |
|
Таблицы данных |
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APT80M60JMOSFET N-CH 600V 84A ISOTOP |
2414 | 59.54 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 84A (Tc) | 10V | 55mOhm @ 60A, 10V | 5V @ 5mA | 600 nC @ 10 V | ±30V | 24000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
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APL602LGMOSFET N-CH 600V 49A TO264 |
2930 | 61.00 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 49A (Tc) | 12V | 125mOhm @ 24.5A, 12V | 4V @ 2.5mA | - | ±30V | 9000 pF @ 25 V | - | 730W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
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APT80F60JMOSFET N-CH 600V 84A ISOTOP |
3411 | 64.42 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 84A (Tc) | 10V | 55mOhm @ 60A, 10V | 5V @ 2.5mA | 598 nC @ 10 V | ±30V | 23994 pF @ 25 V | - | 961W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
|
IXFN36N100MOSFET N-CH 1KV 36A SOT-227B |
2266 | 65.26 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 1000 V | 36A (Tc) | 10V | 240mOhm @ 500mA, 10V | 5V @ 8mA | 380 nC @ 10 V | ±20V | 9200 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
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APT60M75JFLLMOSFET N-CH 600V 58A ISOTOP |
3093 | 65.87 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 58A (Tc) | 10V | 75mOhm @ 29A, 10V | 5V @ 5mA | 195 nC @ 10 V | ±30V | 8930 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
| |
|
IXTX3N250LMOSFET N-CH 2500V 3A PLUS247-3 |
2671 | 66.33 |
ДобавитьРасследования |
Tube | Linear | Active | N-Channel | MOSFET (Metal Oxide) | 2500 V | 3A (Tc) | 10V | 10Ohm @ 1.5A, 10V | 5V @ 1mA | 230 nC @ 10 V | ±20V | 5400 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
APT100F50JMOSFET N-CH 500V 103A ISOTOP |
2073 | 66.74 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 103A (Tc) | 10V | 36mOhm @ 75A, 10V | 5V @ 5mA | 620 nC @ 10 V | ±30V | 24600 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
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APT50M50JVRMOSFET N-CH 500V 77A ISOTOP |
2353 | 66.93 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 77A (Tc) | - | 50mOhm @ 500mA, 10V | 4V @ 5mA | 1000 nC @ 10 V | - | 19600 pF @ 25 V | - | - | - | Chassis Mount |
|
Таблицы данных |
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APT34M120JMOSFET N-CH 1200V 35A SOT227 |
3547 | 67.43 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 35A (Tc) | 10V | 300mOhm @ 25A, 10V | 5V @ 2.5mA | 560 nC @ 10 V | ±30V | 18200 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
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APT45M100JMOSFET N-CH 1000V 45A SOT227 |
2677 | 67.50 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 45A (Tc) | 10V | 180mOhm @ 33A, 10V | 5V @ 2.5mA | 570 nC @ 10 V | ±30V | 18500 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
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APT10M07JVFRMOSFET N-CH 100V 225A ISOTOP |
2745 | 68.01 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 225A (Tc) | - | 7mOhm @ 500mA, 10V | 4V @ 5mA | 1050 nC @ 10 V | - | 21600 pF @ 25 V | - | - | - | Chassis Mount |
|
Таблицы данных |
|
IXTN62N50LMOSFET N-CH 500V 62A SOT227B |
3691 | 69.43 |
ДобавитьРасследования |
Tube | Linear | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 62A (Tc) | 20V | 100mOhm @ 500mA, 20V | 5V @ 250µA | 550 nC @ 20 V | ±30V | 11500 pF @ 25 V | - | 800W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
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APT10026L2LLGMOSFET N-CH 1000V 38A 264 MAX |
2221 | 69.50 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 38A (Tc) | - | 260mOhm @ 19A, 10V | 5V @ 5mA | 267 nC @ 10 V | - | 7114 pF @ 25 V | - | - | - | Through Hole |
|
Таблицы данных |
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2N7002EN-CHANNEL SMD MOSFET ESD PROTECT |
2033 | 0.15 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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