Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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C3M0060065KSICFET N-CH 650V 37A TO247-4L |
3292 | 14.91 |
ДобавитьРасследования |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 37A (Tc) | 15V | 79mOhm @ 13.2A, 15V | 3.6V @ 5mA | 46 nC @ 15 V | +15V, -4V | 1020 pF @ 600 V | - | 150W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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APT77N60SC6MOSFET N-CH 600V 77A D3PAK |
3889 | 14.99 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 77A (Tc) | 10V | 41mOhm @ 44.4A, 10V | 3.6V @ 2.96mA | 260 nC @ 10 V | ±20V | 13600 pF @ 25 V | Super Junction | 481W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFT70N20Q3MOSFET N-CH 200V 70A TO268 |
3414 | 15.00 |
ДобавитьРасследования |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 70A (Tc) | 10V | 40mOhm @ 35A, 10V | 6.5V @ 4mA | 67 nC @ 10 V | ±20V | 3150 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFT50N30Q3MOSFET N-CH 300V 50A TO268 |
3570 | 15.00 |
ДобавитьРасследования |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 50A (Tc) | 10V | 80mOhm @ 25A, 10V | 6.5V @ 4mA | 65 nC @ 10 V | ±20V | 3165 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFT30N50Q3MOSFET N-CH 500V 30A TO268 |
2181 | 15.00 |
ДобавитьРасследования |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | 10V | 200mOhm @ 15A, 10V | 6.5V @ 4mA | 62 nC @ 10 V | ±20V | 3200 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFT400N075T2MOSFET N-CH 75V 400A TO268 |
2193 | 15.15 |
ДобавитьРасследования |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 400A (Tc) | 10V | 2.3mOhm @ 100A, 10V | 4V @ 250µA | 420 nC @ 10 V | ±20V | 24000 pF @ 25 V | - | 1000W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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STW62N65M5MOSFET N-CH 650V 46A TO247 |
2426 | 15.16 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 46A (Tc) | 10V | 49mOhm @ 23A, 10V | 5V @ 250µA | 142 nC @ 10 V | ±25V | 6420 pF @ 100 V | - | 330W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT6025BFLLGMOSFET N-CH 600V 24A TO247 |
3547 | 15.31 |
ДобавитьРасследования |
Bulk | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | - | 250mOhm @ 12A, 10V | 5V @ 1mA | 65 nC @ 10 V | - | 2910 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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NVH4L027N65S3FSF3 FRFET AUTO 27MOHM TO-247-4L |
2461 | 15.35 |
ДобавитьРасследования |
Tray | SuperFET® III, FRFET® | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 27.4mOhm @ 35A, 10V | 5V @ 3mA | 227 nC @ 10 V | ±30V | 7780 pF @ 400 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT8052BLLGMOSFET N-CH 800V 15A TO247 |
3660 | 15.48 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 15A (Tc) | - | 520mOhm @ 7.5A, 10V | 5V @ 1mA | 75 nC @ 10 V | - | 2035 pF @ 25 V | - | - | - | Through Hole |
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IXFT320N10T2-TRLMOSFET N-CH 100V 320A TO268 |
2921 | 15.49 |
ДобавитьРасследования |
Tape & Reel (TR) | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 320A (Tc) | 10V | 3.5mOhm @ 100A, 10V | 4V @ 250µA | 430 nC @ 10 V | ±20V | 26000 pF @ 25 V | - | 1kW (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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APT84M50LMOSFET N-CH 500V 84A TO264 |
2108 | 15.51 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 84A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 13500 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXTT40N50L2-TRLMOSFET N-CH 500V 40A TO268 |
3623 | 15.54 |
ДобавитьРасследования |
Tape & Reel (TR) | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 40A (Tc) | 10V | 170mOhm @ 20A, 10V | 4.5V @ 250µA | 320 nC @ 10 V | ±20V | 10400 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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S2M0080120DMOSFET SILICON CARBIDE SIC 1200V |
3350 | 15.48 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 41A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 54 nC @ 20 V | +25V, -10V | 1324 pF @ 1000 V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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APT1001RSVRGMOSFET N-CH 1000V 11A D3PAK |
3883 | 15.71 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 11A (Tc) | - | 1Ohm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | - | 3660 pF @ 25 V | - | - | - | Surface Mount |
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IXFH170N15X3MOSFET N-CH 150V 170A TO247 |
3367 | 15.76 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 170A (Tc) | 10V | 6.7mOhm @ 85A, 10V | 4.5V @ 4mA | 122 nC @ 10 V | ±20V | 7620 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFR32N80PMOSFET N-CH 800V 20A ISOPLUS247 |
3183 | 15.86 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 20A (Tc) | 10V | 290mOhm @ 16A, 10V | 5V @ 8mA | 150 nC @ 10 V | ±30V | 8800 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT1001RBVFRGMOSFET N-CH 1000V 11A TO247 |
3816 | 15.92 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 11A (Tc) | - | 1Ohm @ 5.5A, 10V | 4V @ 1mA | 150 nC @ 10 V | - | 3050 pF @ 25 V | - | - | - | Through Hole |
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IXFT16N120P-TRLMOSFET N-CH 1200V 16A TO268 |
3530 | 15.98 |
ДобавитьРасследования |
Tape & Reel (TR) | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 16A (Tc) | 10V | 950mOhm @ 8A, 10V | 6.5V @ 1mA | 120 nC @ 10 V | ±30V | 6900 pF @ 25 V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTR200N10PMOSFET N-CH 100V 120A ISOPLUS247 |
2202 | 16.00 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 8mOhm @ 60A, 10V | 5V @ 500µA | 235 nC @ 10 V | ±20V | 7600 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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