Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPW65R080CFDFKSA2

Таблицы данных

IPW65R080CFDFKSA2

IPW65R080CFDFKSA2

MOSFET N-CH 650V 43.3A TO247-3

Infineon Technologies

2739 8.76
- +

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Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 43.3A (Tc) 10V 80mOhm @ 17.6A, 10V 4.5V @ 1.8mA 167 nC @ 10 V ±20V 5030 pF @ 100 V - 391W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH36P15P

Таблицы данных

IXTH36P15P

IXTH36P15P

MOSFET P-CH 150V 36A TO247

IXYS

3336 8.79
- +

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Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 150 V 36A (Tc) 10V 110mOhm @ 18A, 10V 4.5V @ 250µA 55 nC @ 10 V ±20V 3100 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA30N65X2 IXTA30N65X2

IXTA30N65X2

IXTA30N65X2

IXYS

2463 8.79
- +

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Tube Ultra X2 Active - - - - - - - - - - - - - -
IXTQ34N65X2M IXTQ34N65X2M

IXTQ34N65X2M

DISCRETE MOSFET 34A 650V X2 TO3P

IXYS

2306 8.79
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 34A (Tc) 10V 96mOhm @ 17A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 3000 pF @ 25 V - 43W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFQ50N60X

Таблицы данных

IXFQ50N60X

IXFQ50N60X

MOSFET N-CH 600V 50A TO3P

IXYS

2144 8.80
- +

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Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 73mOhm @ 25A, 10V 4.5V @ 4mA 116 nC @ 10 V ±30V 4660 pF @ 25 V - 660W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF21N90K5

Таблицы данных

STF21N90K5

STF21N90K5

MOSFET N-CH 900V 18.5A TO220FP

STMicroelectronics

3800 8.81
- +

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Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 900 V 18.5A (Tc) 10V 299mOhm @ 9A, 10V 5V @ 100µA 43 nC @ 10 V ±30V 1645 pF @ 100 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK24N80P

Таблицы данных

IXFK24N80P

IXFK24N80P

MOSFET N-CH 800V 24A TO264AA

IXYS

2569 8.83
- +

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Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 24A (Tc) 10V 400mOhm @ 12A, 10V 5V @ 4mA 105 nC @ 10 V ±30V 7200 pF @ 25 V - 650W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVHL040N65S3HF

Таблицы данных

NVHL040N65S3HF

NVHL040N65S3HF

SUPERFER3 FRFET AUTOMOTIVE 40MOH

onsemi

3445 8.86
- +

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Tray SuperFET® III, FRFET® Active N-Channel MOSFET (Metal Oxide) 650 V 65A (Tc) 10V 40mOhm @ 32.5A, 10V 5V @ 2.1mA 157 nC @ 10 V ±30V 6655 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT170N10P-TR IXTT170N10P-TR

IXTT170N10P-TR

MOSFET N-CH 100V 170A TO268

IXYS

3517 8.90
- +

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Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 100 V 170A (Tc) 10V, 15V 9mOhm @ 85A, 10V 5V @ 250µA 198 nC @ 10 V ±20V 6000 pF @ 25 V - 715W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPZ60R060C7XKSA1

Таблицы данных

IPZ60R060C7XKSA1

IPZ60R060C7XKSA1

MOSFET N-CH 600V 35A TO247-4

Infineon Technologies

3250 1.00
- +

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Bulk,Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 60mOhm @ 15.9A, 10V 4V @ 800µA 68 nC @ 10 V ±20V 2850 pF @ 400 V - 162W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6050JNZC17

Таблицы данных

R6050JNZC17

R6050JNZC17

MOSFET N-CH 600V 50A TO3PF

Rohm Semiconductor

3698 8.94
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 15V 83mOhm @ 25A, 15V 7V @ 5mA 120 nC @ 15 V ±30V 4500 pF @ 100 V - 120W (Tc) 150°C (TJ) Through Hole
IXTT11P50-TRL IXTT11P50-TRL

IXTT11P50-TRL

MOSFET P-CH 500V 11A TO268

IXYS

2740 8.94
- +

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Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 750mOhm @ 5.5A, 10V 5V @ 250µA 130 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT17F80S

Таблицы данных

APT17F80S

APT17F80S

MOSFET N-CH 800V 18A D3PAK

Microchip Technology

2608 8.97
- +

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Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 800 V 18A (Tc) 10V 580mOhm @ 9A, 10V 5V @ 1mA 122 nC @ 10 V ±30V 3757 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPZA60R045P7XKSA1

Таблицы данных

IPZA60R045P7XKSA1

IPZA60R045P7XKSA1

MOSFET N-CH 650V 61A TO247-4-3

Infineon Technologies

2820 8.88
- +

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Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 61A (Tc) 10V 45mOhm @ 22.5A, 10V 4V @ 1.08mA 90 nC @ 10 V ±20V 3891 pF @ 400 V - 201W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT16N80P

Таблицы данных

IXFT16N80P

IXFT16N80P

MOSFET N-CH 800V 16A TO268

IXYS

2274 8.97
- +

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Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 16A (Tc) 10V 600mOhm @ 500mA, 10V 5V @ 4mA 71 nC @ 10 V ±30V 4600 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHW70N60EF-GE3

Таблицы данных

SIHW70N60EF-GE3

SIHW70N60EF-GE3

MOSFET N-CH 600V 70A TO247AD

Vishay Siliconix

2912 8.97
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 70A (Tc) 10V 38mOhm @ 35A, 10V 4V @ 250µA 380 nC @ 10 V ±30V 7500 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA36N55X2 IXFA36N55X2

IXFA36N55X2

IXFA36N55X2

IXYS

3736 9.01
- +

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Tube HiPerFET™, Ultra X2 Active - - - - - - - - - - - - - -
IXFQ60N25X3

Таблицы данных

IXFQ60N25X3

IXFQ60N25X3

MOSFET N-CHANNEL 250V 60A TO3P

IXYS

3146 9.03
- +

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Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 60A (Tc) 10V 23mOhm @ 30A, 10V 4.5V @ 1.5mA 50 nC @ 10 V ±20V 3610 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVBG060N090SC1 NVBG060N090SC1

NVBG060N090SC1

MOSFET N-CH 900V 5.8/44A D2PAK-7

onsemi

3944 9.04
- +

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Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 900 V 5.8A (Ta), 44A (Tc) 15V 84mOhm @ 20A, 15V 4.3V @ 5mA 88 nC @ 15 V +19V, -10V 1800 pF @ 450 V - 3.6W (Ta), 211W (Tc) -55°C ~ 175°C (TJ) Surface Mount
APT1003RBLLG

Таблицы данных

APT1003RBLLG

APT1003RBLLG

MOSFET N-CH 1000V 4A TO247

Microchip Technology

2513 9.22
- +

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Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 4A (Tc) 10V 3Ohm @ 2A, 10V 5V @ 1mA 34 nC @ 10 V ±30V 694 pF @ 25 V - 139W (Tc) -55°C ~ 150°C (TJ) Through Hole
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