Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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IPA50R140CPXKN-CHANNEL POWER MOSFET |
3547 | 0.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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RJK4512DPP-00#T2N-CHANNEL POWER MOSFET |
3733 | 0.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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RJ1L12BGNTLLNCH 60V 120A POWER MOSFET : RJ1L |
2024 | 7.08 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Ta) | 4.5V, 10V | 2.9mOhm @ 40A, 10V | 2.5V @ 500µA | 175 nC @ 10 V | ±20V | 9000 pF @ 30 V | - | 192W (Ta) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPT014N08NM5ATMA1MOSFET N-CH 80V 37A/331A HSOF-8 |
2921 | 7.38 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ 5 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 37A (Ta), 331A (Tc) | 6V, 10V | 1.4mOhm @ 150A, 10V | 3.8V @ 280µA | 200 nC @ 10 V | ±20V | 14000 pF @ 40 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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HUF75631S3STMOSFET N-CH 100V 33A D2PAK |
2531 | 4.40 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 33A (Tc) | 10V | 40mOhm @ 33A, 10V | 4V @ 250µA | 79 nC @ 20 V | ±20V | 1220 pF @ 25 V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTP05N100MMOSFET N-CH 1000V 700MA TO220AB |
3894 | 4.06 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 700mA (Tc) | 10V | 17Ohm @ 375mA, 10V | 4.5V @ 25µA | 7.8 nC @ 10 V | ±30V | 260 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTY1R4N120PMOSFET N-CH 1200V 1.4A TO252 |
3875 | 4.06 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 1.4A (Tc) | 10V | - | 4.5V @ 100µA | - | ±20V | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFP4N85XMOSFET N-CH 850V 3.5A TO220AB |
3695 | 4.06 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 3.5A (Tc) | 10V | 2.5Ohm @ 2A, 10V | 5.5V @ 250µA | 7 nC @ 10 V | ±30V | 247 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHH105N60EF-T1GE3EF SERIES POWER MOSFET WITH FAST |
2850 | 7.19 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 26A (Tc) | 10V | 105mOhm @ 13A, 10V | 5V @ 250µA | 50 nC @ 10 V | ±30V | 2099 pF @ 100 V | - | 174W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHB28N60EF-T1-GE3N-CHANNEL 600V |
3165 | 6.50 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 28A (Tc) | 10V | 123mOhm @ 14A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±30V | 2714 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHB28N60EF-T5-GE3N-CHANNEL 600V |
3274 | 6.50 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 28A (Tc) | 10V | 123mOhm @ 14A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±30V | 2714 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IMBG65R260M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- |
1000 | 7.40 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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FDBL86563-F085MOSFET N-CH 60V 240A 8HPSOF |
2875 | 2.77 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 240A (Tc) | 10V | 1.5mOhm @ 80A, 10V | 4V @ 250µA | 169 nC @ 10 V | ±20V | 10300 pF @ 30 V | - | 357W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NTMFS0D7N03CGT1GMOSFET N-CH 30V 59A/409A 5DFN |
2553 | 5.25 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 59A (Ta), 409A (Tc) | 10V | 0.65mOhm @ 30A, 10V | 2.2V @ 280µA | 147 nC @ 10 V | ±20V | 12300 pF @ 15 V | - | 4W (Ta), 187W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FCPF260N60EMOSFET N CH 600V 15A TO-220F |
2140 | 2.79 |
ДобавитьРасследования |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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STB30N65DM6AGAUTOMOTIVE-GRADE N-CHANNEL 650 V |
186 | 6.88 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 28A (Tc) | 10V | 115mOhm @ 10A, 10V | 4.75V @ 250µA | 46 nC @ 10 V | ±25V | 2000 pF @ 100 V | - | 223W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NTBGS2D5N06CPOWER MOSFET, 60 V, 2.5 M?, 224 |
3040 | 6.60 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 27A (Ta), 169A (Tc) | 10V, 12V | 2.5mOhm @ 35A, 12V | 4V @ 175µA | 45.4 nC @ 10 V | ±20V | 3510 pF @ 30 V | - | 3.7W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FCP850N80ZMOSFET N-CH 800V 8A TO220-3 |
2780 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 850mOhm @ 3A, 10V | 4.5V @ 600µA | 29 nC @ 10 V | ±20V | 1315 pF @ 100 V | - | 136W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPA60R380E6XKSA1MOSFET N-CH 600V 10.6A TO220-FP |
500 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 3.5V @ 320µA | 32 nC @ 10 V | ±20V | 700 pF @ 100 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTP48P05TMOSFET P-CH 50V 48A TO220AB |
2851 | 4.18 |
ДобавитьРасследования |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 50 V | 48A (Tc) | 10V | 30mOhm @ 24A, 10V | 4.5V @ 250µA | 53 nC @ 10 V | ±15V | 3660 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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