Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IAUC100N08S5N031ATMA1MOSFET N-CH 80V 100A TDSON-8-34 |
2031 | 3.16 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, OptiMOS™-5 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 100A (Tc) | 6V, 10V | 3.1mOhm @ 50A, 10V | 3.8V @ 95µA | 76 nC @ 10 V | ±20V | 5525 pF @ 40 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NTD5C688NLT4GMOSFET N-CH 60V 7.5A/17A DPAK |
2745 | 3.11 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | - | - | 7.5A (Ta), 17A (Tc) | - | 27.4mOhm @ 10A, 10V | 2.1V @ 250µA | - | - | - | - | - | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FQU1N80TUMOSFET N-CH 800V 1A IPAK |
3631 | 1.02 |
ДобавитьРасследования |
Tube | QFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 800 V | 1A (Tc) | 10V | 20Ohm @ 500mA, 10V | 5V @ 250µA | 7.2 nC @ 10 V | ±30V | 195 pF @ 25 V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP105N3LLMOSFET N-CH 30V 80A TO220 |
3920 | 1.57 |
ДобавитьРасследования |
Tube | DeepGATE™, STripFET™ VI | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 3.5mOhm @ 40A, 10V | 2.5V @ 250µA | 42 nC @ 4.5 V | ±20V | 3100 pF @ 25 V | - | 140W (Tc) | 175°C (TJ) | Through Hole |
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Таблицы данных |
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R6004PND3FRATLMOSFET N-CH 600V 4A TO252 |
2708 | 3.06 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 1.8Ohm @ 2A, 10V | 4.5V @ 1mA | 11 nC @ 10 V | ±25V | 280 pF @ 25 V | - | 65W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NTMFS4D2N10MDT1GN-CHANNEL SHIELDED GATE POWERTRE |
3779 | 3.20 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 16.4A (Ta), 113A (Tc) | 6V, 10V | 4.3mOhm @ 46A, 10V | 4V @ 239µA | 60 nC @ 10 V | ±20V | 3100 pF @ 50 V | - | 2.8W (Ta), 132W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHA20N50E-GE3N-CHANNEL 500V |
2770 | 3.10 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 19A (Tc) | 10V | 184mOhm @ 10A, 10V | 4V @ 250µA | 92 nC @ 10 V | ±30V | 1640 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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NTTFS4C50NTAGMOSFET N-CH 30V 75A 8WDFN |
2514 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | - | Active | - | - | - | 19.4A (Ta) | - | - | - | - | - | - | - | - | - | Surface Mount |
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Таблицы данных |
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NVTFWS002N04CLTAGMOSFET N-CH 40V 28A/142A 8WDFN |
2262 | 2.08 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 28A (Ta), 142A (Tc) | 4.5V, 10V | 2.2mOhm @ 50A, 10V | 2V @ 90µA | 49 nC @ 10 V | ±20V | 2940 pF @ 25 V | - | 3.2W (Ta), 85W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NVMFS5C628NLAFT1GMOSFET N-CH 60V 28A/150A 5DFN |
3767 | 2.99 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 28A (Ta), 150A (Tc) | 4.5V, 10V | 2.4mOhm @ 50A, 10V | 2V @ 135µA | 52 nC @ 10 V | ±20V | 3600 pF @ 25 V | - | 3.7W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SIDR5102EP-T1-RE3N-CHANNEL 100 V (D-S) 175C MOSFE |
2047 | 3.11 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen V | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 28.2A (Ta), 126A (Tc) | 7.5V, 10V | 4.1mOhm @ 20A, 10V | 4V @ 250µA | 51 nC @ 10 V | ±20V | 2850 pF @ 50 V | - | 7.5W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SIJA54ADP-T1-GE3N-CHANNEL 40 V (D-S) MOSFET POWE |
2934 | 2.02 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 35.4A (Ta), 126A (Tc) | 4.5V, 10V | 2.3mOhm @ 15A, 10V | 2.5V @ 250µA | 70 nC @ 10 V | +20V, -16V | 3850 pF @ 20 V | - | 5.2W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NP50P04KDG-E1-AYMOSFET P-CH 40V 50A TO263 |
2530 | 2.80 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 10mOhm @ 25A, 10V | 2.5V @ 1mA | 100 nC @ 10 V | ±20V | 5100 pF @ 10 V | - | 1.8W (Ta), 90W (Tc) | 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NTMFS6H848NT1GMOSFET N-CH 80V 13A/57A 5DFN |
3849 | 1.03 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 13A (Ta), 57A (Tc) | 6V, 10V | 9.4mOhm @ 10A, 10V | 4V @ 70µA | 16 nC @ 10 V | ±20V | 1180 pF @ 40 V | - | 3.7W (Ta), 73W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SI4434DY-T1-E3MOSFET N-CH 250V 2.1A 8SO |
3652 | 3.14 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.1A (Ta) | 6V, 10V | 155mOhm @ 3A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±20V | - | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI7178DP-T1-GE3MOSFET N-CH 100V 60A PPAK SO-8 |
2717 | 3.14 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 10V | 14mOhm @ 10A, 10V | 4.5V @ 250µA | 72 nC @ 10 V | ±20V | 2870 pF @ 50 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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2SJ319STL-EP-CHANNEL POWER MOSFET |
2625 | 0.00 |
ДобавитьРасследования |
Bulk | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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RM21N650T7MOSFET N-CHANNEL 650V 21A TO247 |
2977 | 1.60 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 21A (Tc) | 10V | 180mOhm @ 10.5A, 10V | 3.5V @ 250µA | - | ±30V | 1950 pF @ 50 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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NVMFS5C423NLWFAFT1GMOSFET N-CH 40V 31A/150A 5DFN |
3008 | 2.12 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 31A (Ta), 150A (Tc) | 4.5V, 10V | 2mOhm @ 50A, 10V | 2V @ 250µA | 50 nC @ 10 V | ±20V | 3100 pF @ 20 V | - | 3.7W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF630PBF-BE3MOSFET N-CH 200V 9A TO220AB |
2110 | 1.60 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | - | 400mOhm @ 5.4A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 800 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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